1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25C
P
D
5.4
Watts
Above 25C derate by
0.031
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
32.3
C/W
PTB 20248
0.7 Watts, 14651513 MHz
Cellular Radio RF Power Transistor
Description
The 20248 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
0
0.2
0.4
0.6
0.8
1
1.2
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 0.120 A
f = 1513 MHz
Package 20227
0.7 Watts, 26 Vdc
Class A Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
20248
LOT CODE
9/28/98
PTB 20248
2
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
V
(BR)CER
55
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
55
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 200 mA
h
FE
20
--
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 0.2 W, I
CQ
= 120 mA, f = 1513 MHz)
G
pe
10
12
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 120 mA, f = 1513 MHz)
P-1dB
0.7
0.9
--
Watts
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 0.7 W, I
CQ
= 120 mA, f = 1513 MHz
--
--
5:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 0.7 W, I
CQ
= 120 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
1465
6.50
6.10
10.60
37.30
1489
5.70
7.60
10.70
38.90
1513
5.00
8.90
10.90
40.50
Z
0
= 50
5 /1 9 /9 8
PTB 20248
3
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
12
13
14
15
16
1465
1475
1485
1495
1505
1515
Frequency (MHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 0.120 A
Pout = 0.2 W
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20248 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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