e
1
PTB 20258
6 Watts, 915960 MHz
Cellular Radio RF Power Transistor
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
0
2
4
6
8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Input Power (Watts)
Output Power (Watts)
20
32
44
56
68
80
Efficiency (%)
V
CC
= 25 V
I
CQ
= 27 mA
f = 960 MHz
Output Power
Efficiency
Typical Output Power and Efficiency vs. Input Power
Package 20208
20258
LOT CODE
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 915960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
22
Watts
Above 25C derate by
0.125
W/C
Storage Temperature Range
Tstg
-40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
8
C/W
7-21-98
PTB 20258
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
28
29
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
60
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA, f = 960 MHz)
G
pe
10
11
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA, f = 960 MHz)
C
--
50
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA,
--
--
30:1
--
f = 960 MHz--all phase angles at frequency of test)
Typical Performance
9
10
11
12
13
700
750
800
850
900
950
1000
1050
Frequency (MHz)
G
a
in (dB)
V
CC
= 25 V
I
CQ
= 27 mA
P
OUT
= 6 W
Gain vs. Frequency
(as measured in a broadband circuit)
3
4
5
6
7
8
9
20
22
24
26
28
Supply Voltage (Volts)
Output Power (Watts)
I
CQ
= 27 mA
f = 960 MHz
Output Power
(at P-1dB)
vs. Supply Voltage
7-21-98
PTB 20258
3
e
Power Gain vs. Output Power
6
8
10
12
14
16
0.10
1.00
10.00
Output Power (W)
Po
we
r Ga
i
n
(d
B)
V
CC
= 25V
f = 960 MHz
I
CQ
= 41 mA
I
CQ
= 27 mA
I
CQ
= 14 mA
I
CQ
= 7 mA
Z Source
Z Load
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
1000.00
3.02
-1.05
88.10
12.00
980.00
3.10
-1.22
9.04
13.00
960.00
3.19
-1.35
9.06
14.10
950.00
3.29
-1.55
9.20
14.36
915.00
3.79
-1.95
9.50
15.98
900.00
3.60
-2.06
10.10
16.83
850.00
3.87
-2.04
11.67
17.20
800.00
3.90
-2.66
12.60
17.80
750.00
4.15
-3.00
13.80
18.87
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
L1
1998 Ericsson Inc.
EUS/KR 1301-PTB 20258 Rev. A 07-21-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Impedance Data
(V
CC
= 25 Vdc, Pout = 6 W, I
CQ
= 27 mA)
Z
0
= 50
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