e
1
PTF 10045
30 Watts, 1.601.65 GHz
GOLDMOS
TM
Field Effect Transistor
10045
A-1234569955
Package 20222
0
10
20
30
40
0
1
2
3
4
Input Power (Watts)
Output Power (Watts)
20
30
40
50
60
Efficiency (%
)
V
DD
= 28V
I
DQ
= 380 mA
f = 1650 MHz
Typical Output Power and Efficiency vs. Input Power
Output Power
Efficiency
Performance at 1650 MHz, 28 Volts
- Output Power = 30 Watts
- Power Gain = 11.5 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
Description
The PTF 10045 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal amplifier applications to 1.65
GHz. It is rated at 30 watts power output. Nitride surface passivation
and gold metallization ensure excellent device lifetime and reliability.
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at Tflange = 25C
P
D
120
Watts
Above 25C derate by
0.7
W/C
Storage Temperature
T
STG
150
C
Thermal Resistance (Tflange = 70C)
R
q
JC
1.4
C/W
PTF 10045
2
e
8
9
10
11
12
13
1400
1450
1500
1550
1600
1650
Frequency (MHz)
Ga
i
n
20
30
40
50
60
70
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 380 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
6
7
8
9
10
11
12
1600
1610
1620
1630
1640
1650
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 380 mA
P
OUT
= 30 W
Gain
Return Loss (dB)
Efficiency (%)
Efficienc
y
Re
turn Los
s
0
- 5
-10
-15
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.0
--
Siemens
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
G
ps
10.0
11.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 380 mA, f = 1650 MHz)
P-1dB
30
35
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
h
40
43
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
Typical Performance
PTF 10045
3
e
Output Power vs. Supply Voltage
20
25
30
35
40
24
26
28
30
32
34
36
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 380 mA
f = 1650 MHz
-60
-50
-40
-30
-20
-10
0
10
20
30
40
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V, I
DQ
= 380 mA
f
1
= 1549.9 MHz, f
2
= 1550.0 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
1400
1.9
1.2
2.0
2.1
1450
1.5
0.7
2.0
2.0
1500
1.1
0.5
2.0
2.0
1550
0.9
0.5
2.0
1.9
1600
0.8
0.6
2.0
1.6
1650
0.7
0.7
1.8
1.2
Z Source
Z Load
G
S
D
Capacitance vs. Supply Voltage
0
20
40
60
80
100
120
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
1
2
3
4
5
6
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Impedance Data
V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA
0.
1
0.
3
0.
2
0.1
0
0.2
0
.
0
Z Load
1650 MHz
1400 MHz
1650 MHz
1400 MHz
Z Source
Z
0
= 10
W
Bias Voltage vs. Temperature
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
Bias Voltage (V)
0.3
0.87
1.44
2.01
2.58
3.15
Voltage normalized to 1.0 V
Series show current (A)
PTF 10045
4
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 1 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
400
0.933
-169
4.28
37.8
0.005
-18.1
0.833
-154
450
0.933
-170
3.48
32.9
0.004
-10.1
0.859
-157
500
0.951
-171
2.98
33.4
0.003
0.014
0.936
-153
550
0.937
-172
2.63
26.3
0.002
11.2
0.940
-157
600
0.971
-172
2.20
22.6
0.003
41.0
0.924
-161
650
0.952
-175
1.91
20.5
0.003
58.5
0.935
-166
700
0.968
-174
1.76
19.7
0.004
71.2
0.946
-165
750
0.949
-176
1.49
11.5
0.005
66.9
0.946
-171
800
0.975
-175
1.30
13.0
0.006
77.9
0.951
-168
850
0.982
-178
1.21
10.4
0.007
78.2
0.945
-172
900
0.964
-176
1.05
9.64
0.007
78.1
0.917
-173
950
0.972
-179
0.923
5.00
0.008
82.7
0.931
-176
1000
0.971
-177
0.887
8.43
0.010
85.2
0.949
-171
1050
0.983
-180
0.793
3.80
0.011
77.2
0.958
-174
1100
0.962
-179
0.736
0.10
0.011
79.0
0.931
-173
1150
0.996
-178
0.672
0.37
0.013
81.5
0.970
-176
1200
0.959
-180
0.642
3.62
0.012
75.5
0.956
-175
1250
0.989
178
0.585
-2.34
0.013
75.4
0.965
-177
1300
0.971
178
0.553
0.68
0.014
76.0
0.961
-176
1350
0.981
178
0.516
-3.51
0.015
75.4
0.967
-177
1400
0.983
177
0.492
-0.82
0.014
71.1
0.977
-178
1450
0.968
177
0.443
-6.53
0.015
78.4
0.952
-178
1500
0.965
176
0.444
-2.30
0.017
74.3
0.985
-179
1550
0.960
176
0.405
-5.00
0.017
78.7
0.962
-180
1600
0.950
176
0.391
-4.08
0.019
76.9
0.998
-180
1650
0.950
174
0.360
-9.41
0.019
81.1
0.950
179
1700
0.950
175
0.365
-6.95
0.022
77.3
0.955
179
1750
0.952
173
0.330
-9.70
0.022
77.9
0.950
178
1800
0.950
175
0.317
-9.64
0.025
79.0
0.960
179
1850
0.954
171
0.299
-11.4
0.026
74.3
0.947
175
1900
0.960
173
0.314
-10.6
0.030
73.5
0.950
177
1950
0.960
170
0.285
-13.8
0.030
64.7
0.948
174
2000
0.960
173
0.290
-13.1
0.034
63.2
0.980
177
Test Circuit
Test Circuit Schematic for f = 1650 MHz
PTF 10045
5
e
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L2
1998 Ericsson Inc.
EUS/KR 1301-PTF 10045 Uen Rev. A 01-27-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Artwork (1 inch
)
Placement Diagram (not to scale)
DUT
PTF 10045
l
1
.090
l
@ 1650 MHz
Microstrip 50
W
l
2
.265
l
@ 1650 MHz
Microstrip 50
W
l
5
.215
l
@ 1650 MHz
Microstrip 50
W
l
6
.100
l
@ 1650 MHz
Microstrip 50
W
l
3
.115
l
@ 1650 MHz
Microstrip 6.4
W
l
4
.170
l
@ 1650 MHz
Microstrip 9.2
W
C1
0.6 pF, Capacitor ATC 100 B
C2, C3, C6, C9
33 pF, Capacitor ATC 100 B
C4, C5
0.63.6 pF, Variable Capacitor, Johanson
C7
0.1
m
F, 50 V, Capacitor Digi-Key P4917-ND
C8
100
m
F, 50 V, Electrolytic Capacitor, Digi-Key P5276
L1, L2
3 Turn, #20 AWG, .120" I.D.
R1, R2
220
W
, 1/4 W Resistor
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0, AlliedSignal, G200, 2 oz. copper
Notes:
e
6
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