e
1
PTF 10053
12 Watts, 2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20244
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.0
Input Power (Watts)
Output Power (Watts)
10
15
20
25
30
35
40
45
50
Ef
f
icien
cy (
%
)
X
V
DD
= 26 V
I
DQ
= 155 mA
f = 2.0 GHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
Description
The PTF 10053 is a 12watt GOLDMOS FET intended for large
signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency
with 12 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 155 mA, f = 1.93, 1.99 GHz)
G
ps
10
12
--
dB
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 155 mA, f = 1.99 GHz)
P-1dB
12
--
--
Watts
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 155 mA, f = 1.99 GHz)
h
D
40
--
--
%
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 155 mA, f = 1.99 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
10053
A-1234569911
PTF 10053
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 50 mA
V
(BR)DSS
65
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 26 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 2 A
g
fs
--
0.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
58
Watts
Above 25C derate by
0.33
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
3.0
C/W
Typical Performance
9
10
11
12
13
14
15
16
1750
1800
1850
1900
1950
2000
2050
Frequency (MHz)
20
25
30
35
40
45
50
55
Ef
f
i
cien
cy (
%
)
X
V
DD
= 26 V
I
DQ
= 155 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
G
a
in (dB) and O
u
tput Pow
e
r
(W)
Broadband Test Fixture Performance
2
4
6
8
10
12
14
1925
1950
1975
2000
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 26 V
I
DQ
= 155 mA
Pout = 10 W
Gain (dB)
Return Loss
Efficiency (%)
Efficiency (%)
0
-10
-20
-30
Return Loss (dB)
X
PTF 10053
3
e
Power Gain vs. Output Power
7
8
9
10
11
12
13
0
1
10
100
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 26 V
f = 2.0 GHz
I
DQ
= 180 mA
I
DQ
= 90 mA
I
DQ
= 45 mA
Output Power vs. Supply Voltage
10
12
14
16
18
22
24
26
28
30
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 155 mA
f = 2.0 GHz
-60
-50
-40
-30
-20
0
2
4
6
8
10
12
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 26 V
I
DQ
= 155 mA
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
3rd Order IMD vs. Output Power
Capacitance vs. Supply Voltage
0
5
10
15
20
25
30
35
40
45
50
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
=0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.94
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Temp. (C)
Bias Voltage (V)
0.075
0.2875
0.5
0.7125
0.925
1.1375
Voltage nomalized to 1.0 V
Series show current (A)
PTF 10053
4
e
Typical Scattering Parameters
(V
DS
= 26 V, I
D
= 500 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.806
-117
25.9
103
0.012
12
0.578
-80
200
0.800
-127
21.1
96
0.012
4
0.577
-90
300
0.850
-149
12.1
69
0.011
-15
0.650
-113
400
0.878
-158
8.19
54
0.010
-25
0.729
-125
500
0.900
-163
5.94
43
0.008
-31
0.791
-134
600
0.914
-168
4.49
33
0.006
-35
0.851
-142
700
0.925
-171
3.46
25
0.004
-31
0.888
-150
800
0.932
-174
2.73
18
0.003
-16
0.896
-156
900
0.941
-177
2.20
12
0.002
16
0.909
-160
1000
0.947
-180
1.81
6
0.003
52
0.915
-164
1100
0.957
178
1.52
1
0.004
66
0.933
-167
1200
0.961
176
1.29
-4
0.005
73
0.944
-170
1300
0.963
173
1.11
-9
0.006
74
0.953
-173
1400
0.963
171
0.957
-14
0.007
75
0.959
-176
1500
0.963
170
0.839
-19
0.008
75
0.963
-178
1600
0.964
168
0.741
-23
0.009
75
0.964
179
1700
0.968
166
0.664
-27
0.010
75
0.968
177
1800
0.972
165
0.600
-31
0.011
74
0.972
175
1900
0.976
163
0.546
-36
0.012
72
0.974
173
2000
0.978
161
0.499
-40
0.013
71
0.976
171
2100
0.976
159
0.460
-44
0.014
69
0.975
169
2200
0.975
157
0.427
-48
0.015
67
0.977
167
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.75
2.70
-4.0
3.3
-2.5
1.80
2.60
-4.2
3.5
-2.9
1.85
2.50
-4.4
3.7
-2.9
1.90
2.30
-4.8
3.9
-2.7
1.95
2.25
-5.0
3.3
-2.7
2.00
2.20
-5.4
3.1
-2.9
2.05
2.20
-5.8
3.3
-3.1
Impedance Data
V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 155 mA
Z Source
Z Load
G
S
D
Z
0
= 50
W
PTF 10053
5
e
Test Circuit
Schematic for f = 1.990 GHz
DUT
PTF 10053
RF Transistor
l
1
0.312 l 1.990 GHz
Microstrip 46.6
W
l
2
0.161 l 1.990 GHz
Microstrip 46.6
W
l
3
0.312 l 1.990 GHz
Microstrip 46.6
W
l
4
0.248 l 1.990 GHz
Microstrip 46.6
W
l
5
0.118 l 1.990 GHz
Microstrip 9.42
W
l
6
0.177
l
1.990 GHz
Microstrip 8.92
W
l
7
0.129
l
1.990 GHz
Microstrip 46.6
W
l
8
0.312 l 1.990 GHz
Microstrip 46.6
W
C1
Capacitor, Variable, .3-3.5 pF
JACO JMC5701
C2, C5, C6, C7, C8 Capacitor, 33 pF
100B 330
C3
Capacitor, 0.9 pF
100B R9
C4
Capacitor, 3.0 pF
100B 3R0
C9
Capacitor, 0.1 F
Digi-Key
P4525-ND
C10
Capacitor, 1.7 pF
100B 2R0
C11
Capacitor, 10 F, 35V
Digi-Key
PCS6106-ND
J1, J2
Connector, SMA, Female, Panel Mount
Ericsson, #RPM 513 412/53
L4
Ferrite, 6 mm
Phillips 53/3/4.6-452
L2, L3
4 Turns, 22 AWG, .120 DIA I.D.
L1
Inductor, 22 AWG Buss Wire
R1, R2
Resistor, 220
W
, 1/4W
Digi-Key 220QBK-ND
Circuit Board
TMM4, .030" Dielectric Thickness, 2 oz.
copper,
e
r
= 4.5, Rogers
Assembly Diagram (not to scale)
PDF 
ZIP