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Электронный компонент: PTF10065

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e
1
PTF 10065
30 Watts, 1.931.99 GHz
GOLDMOS
Field Effect Transistor
e
10065
1234569921A
Package 20237
0
10
20
30
40
0
1
2
3
Input Power (Watts)
O
u
tput P
o
w
e
r (W
atts)
0
10
20
30
40
50
60
70
80
E
fficiency
V
DD
= 28 V
I
DQ
= 380 mA
f = 1.99 GHz
Output Power and Efficiency vs. Input Power
Output Power
Efficiency
Description
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.93, 1.99 GHz)
G
ps
--
11.0
--
dB
ACPR (40 Walsh Codes)
885 KHz
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
ACPR
- 50
--
--
dBc
1.98 MHz
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
ACPR
- 62
--
--
dBc
Gain Flatness
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.9301.990 GHz)
G
D
f
--
--
0.7
dB
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.99 GHz)
h
D
9
--
--
%
All published data at T
CASE
= 25C unless otherwise indicated.
(table continues next page)
The PTF 10065 is a 30watt GOLDMOS FET intended for PCS
amplifier applications from 1.93 to 1.99 GHz. It typically operates with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
2
e
PTF 10065
RF Specifications
(cont.) (100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 380 mA, f = 1.99 GHz)
P-1dB
30
--
--
Watts
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA,
Y
--
--
10:1
--
f = 1.99 GHz--all phase angles at frequency of test)
Input Return Loss
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.93, 1.99 GHz)
Rtn Loss
10
--
--
dB
Insertion Phase (Referenced to Correlation Devices)
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.96 GHz)
f
10
--
+10
Deg.
Electrical Characteristics
(cont.) (100% Tested)
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
62
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
--
3.8
--
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 6 A
g
fs
--
1.8
--
Siemens
Gate-Source Leakage
V
GS
= 10 V
I
GSsf
--
--
1
m
A
Gate Quiescent Voltage
V
DS
= 28 V, I
D
= 380 mA
V
GS(q)
3.0
--
5.0
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
62
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
120
Watts
Above 25C derate by
0.7
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
1.4
C/W
3
PTF 10065
e
9
10
11
12
1930
1945
1960
1975
1990
Fre que ncy (M Hz)
Ga
in
20
30
40
50
60
70
80
O
u
t
p
u
t
P
o
w
e
r & E
f
f
i
cien
cy
x
V
DD
= 28 V
I
DQ
= 380 m A
Output P ower (W )
E ffic iency (% )
Gain (dB )
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
10
15
20
25
30
35
40
24
25
26
27
28
29
30
Supply Voltage (Volts)
Ou
tp
u
t
P
o
we
r (Wa
tts
)
I
DQ
= 380 mA
f = 1990 MHz
Output Power
(
@ 1 dB Compression
)
vs. Supply Voltage
-60
-50
-40
-30
30
35
40
45
Output Power (dBm)
IMD
(d
B
c
)
x
V
DD
= 28 V
I
DQ
= 380 mA
ACPR vs. W-CDMA Output Power
(as measured in a broadband circuit)
f = 1930 MHz
f = 1960 MHz
f = 1990 MHz
Power Gain vs. Output Power
4
5
6
7
8
9
10
11
12
0
10
1000
Output Power (Watts)
Power Gain (dB)
V
DD
= 28 V
f = 1990 MHz
I
DQ
= 380 mA
I
DQ
= 180 mA
I
DQ
= 90 mA
Gain vs. Frequency
11.0
11.2
11.4
11.6
11.8
12.0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Gain (dB)
x
V
DD
= 28 V
I
DQ
= 380 mA
P
OUT
= 3 W
Broadband Test Fixture Performance
9
10
11
12
1930
1945
1960
1975
1990
Frequency (MHz)
G
a
i
n
(dB)
x
40
50
60
70
80
V
DD
= 28 V, I
DQ
= 380 mA
P
OUT
= 30 W
Gain
Return Loss
Efficiency
Ef
f
i
ci
ency (
%
)
R
e
tu
r
n
L
o
s
s
(d
B
)
xx
- 5
-15
-25
-35
Typical Performance
4
e
PTF 10065
Impedance Data
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA)
Z Source
Z Load
G
S
D
Z
0
= 50
W
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
1930
11.2
-10.50
2.79
-4.32
1945
11.8
-9.23
2.62
-4.23
1960
12.4
-8.01
2.45
-4.14
1975
13.0
-6.79
2.27
-4.05
1990
13.6
-5.56
2.10
-3.96
Typical Performance
(cont.)
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Case Temperature (C)
G
a
te-Sour
ce Voltage
0.200
0.692
1.183
1.675
2.167
2.658
Voltage normalized to 1.0 V
Series show current (A)
Gate-Source Voltage vs. Case Temperature
Capacitance vs. Supply Voltage *
0
20
40
60
80
100
120
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
1
2
3
4
5
6
7
Crs
s
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
* This part is internally matched. Measurements of the
finished product will not yield these results.
5
PTF 10065
e
Test Circuit Schematic for f = 1990 MHz
DUT
PTF 10065
LDMOS Transistor
l
1
0.072
l
1990 MHz
Microstrip 50
W
l
2
0.118
l
1990 MHz
Microstrip 50
W
l
3
0.063
l
1990 MHz
Microstrip 50
W
l
4
0.043
l
1990 MHz
Microstrip 50
W
l
5
0.045
l
1990 MHz
Microstrip11.23
W
l
6
0.097
l
1990 MHz
Microstrip 9.97
W
l
7
0.028
l
1990 MHz
Microstrip 9.97
W
l
8
0.244
l
1990 MHz
Microstrip 50
W
l
9
0.250
l
1990 MHz
Microtrip 67.35
W
l
10
0.110
l
1990 MHz
Microstrip 80.25
W
C2, C10
Capacitor, 10 F, 35V
Digi-Key PC56106-ND
C3
Capacitor, 0.1 F
Digi-Key P4525-ND
C4, C8, C1, C7
Capacitor, 10pF
100B 100
C5
Capacitor, 1.2 pF
100B 1R2
C6
Capacitor, 0.7 pF
100B 0R7
C9
Capacitor, 0.1 F
ATC 200B
J1, J2
Connector, SMA, Female, Panel Mount
L1
Inductor, 15 nH
L2
4 mm Ferrite Bead
Philips BD 53/3/4.6-452
R1, R2
Resistor, 220 ohm 1/4W Digi-Key P220ECT-ND
R3
Resistor, 1.0 ohm
Digi-Key P1.0 ECT
PCB
0.031" Thick, 2 oz Copper Both Sides, AlliedSignal
G200
Test Circuit
Assembly Diagram (not to scale)
e
PTF 10065
6
e
PTF 10065
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
2000 Ericsson Inc.
EUS/KR 1522-PTF 10065 Uen Rev. A 12-14-00
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Artwork (not to scale)
Test Circuit
(cont.)
10048/10144_D
ERICSSON
e
PTF 10065