e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at Tflange = 25C
P
D
500
Watts
Above 25C derate by
2.85
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
q
JC
0.35
C/W
(1)
per side
PTF 10100
165 Watts, 860900 MHz
LDMOS Field Effect Transistor
20
60
100
140
180
0
1
2
3
4
5
6
7
8
Input Power (Watts)
Output Power (Watts)
0
15
30
45
60
Efficiency (%
)
V
DD
= 28.0 V
I
DQ
= 1.8 A Total
f = 880 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
Package 20250
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 13.0 dB Typ
- Drain Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Description
The 10100 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for large signal amplifier
applications from 860 to 900 MHz. It is rated at 165 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
10100
A-1234569917
PTF 10100
2
e
Electrical Characteristics
(per side) (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
--
4.3
--
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.5
--
Siemens
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.8 A Total, f = 894 MHz)
G
ps
12.0
13.0
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.8 A Total, f = 880 MHz)
P-1dB
165
180
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.8 A Total, f = 894 MHz)
h
45
50
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 165 W(PEP), I
DQ
= 1.8 A Total,
Y
--
--
10:1
--
f = 893.9, 894 MHz--all phase angles at frequency of test)
Typical Performance
Broadband Test Fixture Performance
8
10
12
14
16
865
870
875
880
885
890
895
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 1.8 A Total
P
OUT
= 165 W
Gain
Return
Loss (dB)
Efficiency (%)
Efficienc
y
Re
turn Los
s
- 5
-10
-15
-20
-25
10
12
14
16
18
865
870
875
880
885
890
895
Frequency (MHz)
Gain
25
75
125
175
225
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 1.8 A Total
Typical P
OUT
(at P-1dB), Gain vs. Frequency
Output Power (W )
Gain (dB)
Efficiency (%)
PTF 10100
3
e
Typical Performance
Output Power vs. Supply Voltage
40
60
80
100
120
140
160
180
200
18
20
22
24
26
28
30
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
=1.8 A Total
f = 894 MHz
-60
-50
-40
-30
-20
-10
30
50
70
90
110
130
150
170
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
CQ
= 1.8 A Total
f
1
= 880.0 MHz
f
2
= 880.1 MHz
3rd order
Intermodulation Distortion vs. Output Power
Capacitance vs. Supply Voltage
(per side)
*
0
100
200
300
400
500
600
0
10
20
30
40
Supply Voltage (Volts)
Cds
& Cgs
(pF)
5
15
25
35
45
55
65
75
85
95
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
*This part is internally matched. Measurements of the finished
product will not yield these figures.
PTF 10100
4
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 2 A per side)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.980
-178
0.996
15.6
0.010
-85.2
0.994
-177
350
0.982
-179
0.773
12.8
0.008
-85.3
0.993
-177
400
0.983
-180
0.641
9.48
0.006
-85.7
0.992
-178
450
0.989
179
0.545
7.19
0.005
-85.3
0.996
-179
500
0.989
179
0.489
5.48
0.003
-93.7
0.999
-179
550
0.987
179
0.449
2.11
0.002
-74.5
0.995
-179
600
0.983
178
0.425
-0.90
0.002
-64.9
0.996
-179
650
0.982
177
0.414
-4.52
0.001
-68.5
0.998
-180
700
0.980
176
0.405
-10.2
0.001
-55.1
0.997
-180
750
0.972
175
0.419
-14.3
0.001
-88.5
0.997
180
800
0.958
174
0.442
-19.9
0.001
-87.2
0.993
180
850
0.929
171
0.509
-27.5
0.005
-105
0.991
179
900
0.858
168
0.662
-42.4
0.013
-133
0.989
179
950
0.693
173
0.882
-75.9
0.030
174
0.987
179
1000
0.783
-170
0.714
-125
0.028
120
0.993
179
1050
0.918
-172
0.423
-153
0.022
101
0.989
179
1100
0.951
-175
0.261
-167
0.020
89.2
0.982
179
1150
0.974
-177
0.184
-179
0.019
81.8
0.982
178
1200
0.988
-178
0.124
165
0.018
77.9
0.990
178
1250
0.984
-179
0.060
158
0.017
76.7
0.990
178
1300
0.979
-180
0.048
-154
0.018
77.4
0.986
178
1350
0.980
180
0.070
179
0.018
73.9
0.983
178
1400
0.992
180
0.058
166
0.018
74.5
0.990
177
1450
0.991
179
0.049
156
0.019
78.7
0.992
178
1500
0.986
178
0.042
149
0.021
79.7
0.984
178
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
860
2.3
1.6
1.60
-1.1
870
1.9
0.8
1.70
-1.7
880
1.8
0.3
1.90
-2.1
890
1.7
0.1
1.95
-1.8
900
1.6
-0.2
1.80
-1.5
Z Source
Z Load
G
D
G
S
D
Impedance Data
V
DD
= 28 V, I
DQ
= 1.8 A Total, P
OUT
= 165 W
0.
1
0.1
0.2
0.1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
RA
T
O
R
-
--
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Source
900 MHz
860 MHz
860 MHz
900 MHz
Z
0
= 50
W
PTF 10100
5
e
l
1,
l
20
50
W
, .030
l
l
2,
l
17
20
W
, .089
l
l
3,
l
16
9.6
W
, .055
l
l
4,
l
15
25
W
, .500
l
l
5,
l
6
25
W
, .373
l
l
7,
l
8
12.2
W
, .062
l
l
9,
l
10
13.0
W
, .017
l
l
11,
l
12
6.6
W
, .059
l
l
13,
l
14
9.6
W
, .055
l
Circuit Board
.028" G200,
e
r
= 4.55 @ 1 MHz,
AlliedSignal
Schematic for f = 894 MHz
DUT
10100
C1-2
15 pF, Capacitor ATC 100 B
C3
0.66.0 pF, Variable Capacitor
C4
0.353.5 pF, Variable Capacitor
C5
19 pF, Variable Capacitor
C6-7, C10, C13-14, C18
33 pF, Capacitor ATC 100 B
C8, C11
10
m
F, +10 V Tantalum
C9, C12, C15, C19
0.01
m
F, Capacitor ATC 100 B
C16, C17, C20, C21
10
m
F, +30 V Tantalum
C22
11 pF, Capacitor ATC 100 B
L1. L2
4 Turn, #20 AWG, .120" I.D.
R1, R2, R4, R5
510
W
Resistor
R3, R6
510
W
Resistor
Test Circuit
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