e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 1.93, 1.99 GHz)
G
ps
11
--
--
dB
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 70 mA, f = 1.99 GHz)
P-1dB
5
6.5
--
Watts
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz)
h
D
40
--
--
%
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10107
5 Watts, 2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20244
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Output Power (Watts)
0
20
40
60
80
100
E
fficiency (%)
X
V
DD
= 26 V
I
DQ
= 70 mA
f = 2.0 GHz
Typical Output Power & Efficiency
vs. Input Power
Output Pow er
Efficiency
Description
The PTF 10107 is a 5watt GOLDMOS FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
10107
A-1234569845
2
e
PTF 10107
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 20 mA
V
(BR)DSS
65
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 26 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 2 A
g
fs
--
0.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
39
Watts
Above 25C derate by
0.22
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
4.5
C/W
Typical Performance
5
7
9
11
13
15
1750
1800
1850
1900
1950
2000
2050
Frequency (MHz)
Ga
i
n
& Ou
t
p
u
t
P
o
we
r
x
15
25
35
45
55
65
Efficiency
V
DD
= 26 V
I
DQ
= 70 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Pow er
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
2
4
6
8
10
12
14
1925
1950
1975
2000
Frequency (MHz)
Ga
i
n
0
10
20
30
40
50
60
V
CC
= 26 V
I
DQ
= 70 mA
P
OUT
= 4 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Return Loss
- 5
-15
-25
-35
3
e
PTF 10107
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
Output Power (Watts-PEP)
IMD (dBc
)
V
DD
= 26 V
I
DQ
= 70 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
Intermodulation Distortion vs. Output Power
IM3
IM7
IM5
Capacitance vs. Supply Voltage
0
3
6
9
12
15
18
0
10
20
30
40
Supply Voltage (Volts)
Cds
a
nd Cgs
(
pF)
x
0
1
2
3
4
5
6
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
C
gs
Bias Voltage vs. Temperature
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.05
0.145
0.24
0.335
0.43
0.525
Voltage normalized to 1.0 V
Series show current (A)
Power Gain vs. Output Power
8
9
10
11
12
13
14
0.1
1.0
10.0
Output Power (Watts)
Po
we
r Ga
i
n
(
d
B)
V
DD
= 26 V
f = 2.0 GHz
I
DQ
= 70 mA
I
DQ
= 40 mA
I
DQ
= 20 mA
Output Power vs. Supply Voltage
0
2
4
6
8
10
22
24
26
28
30
Supply Voltage (Volts)
O
u
tput Pow
e
r (Watts)
I
DQ
= 70 mA
f = 2.0 GHz
4
e
PTF 10107
Typical Scattering Parameters
(V
DS
= 26 V, I
D
= 300 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.874
-58
24.1
137
0.009
46
0.770
-35
200
0.837
-70
21.8
129
0.010
37
0.737
-42
300
0.844
-100
17.5
106
0.012
21
0.710
-62
400
0.850
-118
14.1
89
0.013
9
0.709
-77
500
0.858
-130
11.5
77
0.012
-1
0.723
-88
600
0.864
-139
9.44
66
0.011
-8
0.749
-98
700
0.868
-146
7.86
56
0.009
-13
0.767
-108
800
0.870
-153
6.61
48
0.008
-15
0.782
-116
900
0.879
-158
5.65
40
0.006
-13
0.801
-123
1000
0.887
-162
4.86
33
0.004
-2
0.815
-130
1100
0.898
-167
4.24
26
0.004
19
0.837
-136
1200
0.905
-171
3.73
20
0.004
48
0.854
-141
1300
0.911
-174
3.30
14
0.005
66
0.870
-147
1400
0.914
-178
2.92
8
0.006
74
0.882
-152
1500
0.916
179
2.61
2
0.008
77
0.892
-156
1600
0.918
176
2.35
-3
0.009
79
0.898
-160
1700
0.923
173
2.14
-8
0.011
79
0.907
-164
1800
0.928
171
1.95
-13
0.013
78
0.914
-168
1900
0.933
168
1.79
-18
0.015
76
0.920
-172
2000
0.937
165
1.65
-23
0.017
74
0.925
-176
2100
0.935
162
1.53
-28
0.018
71
0.929
-179
2200
0.934
159
1.43
-33
0.020
68
0.934
178
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.75
3.2
-1.7
6.20
2.4
1.80
3.4
-2.0
6.80
1.7
1.85
3.4
-2.4
7.10
0.9
1.90
3.7
-3.1
7.05
0.5
1.95
3.5
-3.8
7.00
0.0
2.00
3.0
-4.1
6.70
-0.4
2.05
2.7
-4.6
6.00
-0.8
Impedance Data
V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA
Z
0
= 50
W
Z Source
Z Load
G
S
D
5
e
PTF 10107
Test Circuit
C1
Capacitor, 0.1 F
Digi-Key P4525-ND
C2, C3, C6, C9
Capacitor, 33 pF
ATC 100 B
C4, C10
Capacitor, 0.5 pF
ATC 100 B
C5
Capacitor, 1.1 pF
ATC 100 B
C7
Capacitor, 0.1 F 50 V
Digi-Key
C8
Capacitor, 100 F, 50 V
Digi-Key P5182-ND
J1, J2
Connector, SMA, Female, Panel Mount
L1
Chip Inductor, 2.7 H
Digi-Key LL2012-F2N7K
L2
3 Turns, 20 AWG, .120 I. D.
N/A
R1, R2
Resistor, 220 ohm, 1/4W Digi-Key QBK-ND
Circuit Board
0.031" Thick,
e
r
= 4.0, 2 0z copper, G200 AlliedSignal
Block Diagram for f = 1.96 GHz
DUT
PTF 10107
LDMOS RF FET
l
1
0.303
l
1.99 GHz
Microstrip 50
W
l
2
0.146
l
1.99 GHz
Microstrip 11.6
W
l
3
0.076
l
1.99 GHz
Microstrip 17.7
W
l
4
0.072
l
1.99 GHz
Microstrip 13.5
W
l
5
0.060
l
1.99 GHz
Microstrip 17.7
W
l
6
0.352
l
1.99 GHz
Microstrip 50
W
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