e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
G
pe
13
14
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1300 mA, f = 894 MHz)
P-1dB
125
140
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
h
45
53
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz
Y
10:1
--
--
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
Description
The 10195 is an internally matched 125watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
PTF 10195
125 Watts, 869894 MHz
GOLDMOS
Field Effect Transistor
10195
12345600-A
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
Input Power (Watts)
Power Output (Watts)
0
8
16
24
32
40
48
56
64
Efficiency (%)
V
DD
= 28 V
I
DQ
= 1.3 A
f = 894 MHz
Typical Power Output and Efficiency
vs. Input Power
Efficiency
Power Output
Package 20248
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
2
PTF 10195
e
10
12
14
16
18
20
869
874
879
884
889
894
Frequency (MHz)
Ga
i
n
0
40
80
120
160
200
Ou
tp
u
t
Po
we
r &
Efficiency
V
DD
= 28 V
I
DQ
= 1.3 A
Output Power (W)
Efficiency (%)
Gain (dB)
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Broadband Test Fixture Performance
2
4
6
8
10
12
14
16
18
20
869
874
879
884
889
894
Frequency (MHz)
G
a
in (dB)
-25
-15
-5
5
15
25
35
45
55
65
V
DD
= 28 V
I
DQ
= 1.3 A
P
OUT
= 125 W
Gain
Return Loss (dB)
Efficiency
Efficiency (%)
Return Loss
0
-10
-20
-30
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 26 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 100 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
3.0
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
266
Watts
Above 25C derate by
1.52
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
.66
C/W
Typical Performance
Test Circuit
3
PTF 10195
e
Power Gain vs. Output Power
13
14
15
16
17
0
1
10
100
1000
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 894 MHz
I
DQ
= 1600 mA
I
DQ
= 1300 mA
I
DQ
= 1000 mA
80
90
100
110
120
130
20
22
24
26
28
30
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 1300 mA
f = 894 MHz
Output Power
(@ 1 dB Compression)
vs. Supply Voltage
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20
30
80
130
Case Temperature (C)
B
i
as Voltage (V)
0.8
2.728
4.656
6.584
8.512
10.44
Voltage normalized to 1.0 V
Series show current (A)
Gate-Source Voltage vs. Case Temperature
-60
-50
-40
-30
-20
10
20
30
40
50
60
70
80
90
100
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V, I
DQ
= 1.3 A
f
1
= 894 MHz, f
2
= 894.1 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
* This part is internally matched. Measurements of the finished product will not yield these figures.
Capacitance vs. Supply Voltage *
0
50
100
150
200
250
300
0
10
20
30
40
Supply Voltage (Volts)
Cds
& Cgs
(pF)
0
5
10
15
20
25
30
35
40
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
4
PTF 10195
e
Test Circuit Schematic for f = 894 MHz
DUT PTF 10195
LDMOS Transistor
l
1 0.0273
l
894 MHz
Microstrip 50
W
l
2 0.0244
l
894 MHz Microstrip 30
W
l
3 0.0204
l
894 MHz Microstrip 30
W
l
4 0.1800
l
894 MHz Microstrip 30
W
l
5 0.0715
l
894 MHz Microstrip 8.63
W
l
6 0.0802
l
894 MHz Microstrip 8.63
W
l
7 0.1026
l
894 MHz Microstrip 8.63
W
l
8 0.0491
l
894 MHz Microstrip 8.63
W
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
860
1.97
-1.13
2.30
0.99
869
1.86
-0.94
2.18
1.19
880
1.69
-0.73
2.00
1.38
894
1.52
-0.44
1.79
1.63
905
1.39
-0.22
1.69
1.85
Z Source
Z Load
G
S
D
Impedance Data
V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA
0.
1
0.
2
0.1
0.1
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
905 MHz
860 MHz
Z Load
Z Source
860 MHz
905 MHz
Z
0
= 50
W
Test Circuit
C1, C3, C8, C12
Capacitor, 43pF
100B 430
C2
Capacitor, 4.3pF
100B 4R3
C4, C5
Capacitor, 5.6pF
100B 5R6
C6
Capacitor, 7.5pF
100B 7R5
C7
Capacitor, 9.1pF
100B 9R1
C11
Capacitor, 5.1pF
100B 5R1
C13
Capacitor, 3.6pF
100B 3R6
C10
Capacitor, 0.1uF Digi-KeyP4525-ND
C9
Capacitor,100uF,50V Digi-KeyP5182-ND
J1,J2
Connector, SMA, Female, Panel Mount
1301-RPM 513 412/53
L1
7 Turns,22AWG,.120 DIA I.D. N/A
R1, R2,R3
Resistor, 220ohm
Digi-Key 220QBK-ND
Circuit Board
.031" thick,
e
r = 4.0, G200 AlliedSignal
l
9 0.0389
l
894 MHz Microstrip 30
W
l
10 0.1411
l
894 MHz Microstrip 30
W
l
11 0.0116
l
894 MHz Microstrip 30
W
l
12 0.0428
l
894 MHz Microstrip 30
W
l
13 0.0293
l
894 MHz Microstrip 50
W
5
PTF 10195
e
Components Layout (not to scale)
Artwork (not to scale)
10195_A OUTPUT
ERICSSON
ERICSSON
10195_A INPUT
6
PTF 10195
e
Case Outline Specifications
Package 20248
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
Speciffications subject to change without notice.
L3
2000 Ericsson Inc.
EUS/KR 1522-PTF 10195 Uen Rev. A1 12-08-00
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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