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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617AB15
15 Watts PEP, 26 Volts, Class AB
Linear 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB15 is a COMMON EMITTER transistor capable of providing
15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz.
This transistor is specifically designed for SATCOM BASE STATION
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55CW
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 58 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
LVceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 6.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P-1dB
Pg
IMD
3
VSWR
Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance
F =1700 MHz
Icq = 100 mAmpsVcc= 26V
15 W PEP, Two Tone
15
10.0
12
-32
6:1
Watt
dB
dBc
BVces
LVceo
BVebo
Ices
h
FE
Cob
jc
Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 26 Volts
Vce = 5 V, Ic =0.5 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
60
27
3.5
20
20
10
100
3.0
Volts
Volts
Volts
mA
pF
C/W
o
Issue February 1996
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