COMSET SEMICONDUCTORS
1/2
2N2646
2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as well as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR's.
MAXIMUM RATINGS (*)
T
J
=125C unless otherwise noted
Symbol
Ratings
2N2646
2N2647
V
B1E
Base 1 Emitter Voltage
30
V
V
B2E
Base 2 Emitter Voltage
30
V
I
FRMS
RMS Emitter Current
50
mA
I
EM
Emitter Peak Current
2
A
P
TOT
Total Power Dissipation
300
mW
T
J
Maximum Junction
150
T
STG
Storage Temperature Range
-55 to +175
C
ELECTRICAL CHARACTERISTICS
T
J
=25C unless otherwise noted, R
GK
=1000
2N2646 2N2647
Symbol
Ratings
Min
Max
I
EO
Emitter Reverse Current
12
A
V
(BR)B1E
Base 1 Emitter Breakdown Voltage
I
E
=100
A
30
V
CASE
COMSET SEMICONDUCTORS
2/2
2N2646
2N2647
2N2646 2N2647
Symbol
Ratings
Min
Max
R
BBO
Interbase Resistance
V
B1B2
= 3 V
4.7
9.1
k
2N2646
0.56
0.75
Intrinsic stand-off ratio
V
B1B2
= 10 V
2N2647
0.68
0.82
-
V
E(SAT)
Emitter Saturation Voltage
I
E
= 50 mA,
V
B1B2
= 10 V
-
2.5
V
2N2646
4
-
I
V
Valley Current
V
B1B2
= 20 V
2N2647
8
-
mA
2N2646
-
5
I
P
Peak Current
V
B1B2
= 25 V
2N2647
-
2
A
* V
DRM
or V
RSM
can be applied for all types on a continuous dc basis without incurring damage.
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
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