PRELIMINARY
1.28 Gbit SDRAM
3DSD1280-323H
1.28 GBit Synchronous DRAM - Hermetic package
3D PLUS, 641 rue Hlne Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0008
Rev : 2
December 1999
Page 1/2
ELECTRONICS
Pin Description
DQ0-DQ31
Data Inputs/Outputs
A0-A12*
Address
CAS#
Column Address Select
RAS#
Row Address Select
WE#
Write Enable
BS0,BS1
Bank Address Input
CLK
Clock
CKE
Clock Enable
DQM
Input/Output Mask
Vcc
Power (+3.3v)
NC
No Connection
GND
Ground
CS0# - CS9#
Chip Select
Pin configuration for
3DSD1024-0863S
Vcc
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
Vcc
NC
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
GND
GND
Vcc
NC
CLK
WE#
CAS#
RAS#
CS9#
CS8#
CS7#
Vcc
NC
GND
CS6#
CS5#
CS4#
CS3#
CS2#
CS1#
CS0#
CKE
GND
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
NC
Vcc
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Vcc
GND
NC/A12*
DQM
BS1
BS0
A11
A10
A9
A8
GND
NC
Vcc
A7
A6
A5
A4
A3
A2
A1
A0
Vcc
1
21
22
42
43
63
64
84
* : A12 is a provision for 256Mb components extension
TOP VIEW
Features
Organized as 40M x 32-bit.
Single +3.3V 0.3V power supply
Two stacks of ten 64 MBit SDRAM mounted
on ceramic hermetic package
Fully synchronous; all signals registered on
positive edge of system clock.
Internal pipelined operation; column address
can be changed every clock cycle.
Programmable burst lengths: 1, 2, 4, 8 or full
page.
Auto Precharge, includes Concurrent Auto
Precharge, and Auto Refresh Modes.
Self Refresh Mode
LVTTL - compatible inputs and outputs
Vcc and Vss are decoupled with four 10nF
and four 100nF capacitors inside the module
MIL-STD-883D Class S screening -
temperature range : -15C to +80
General Description
The 3DSD1280-323H is a highly integrated Synchro-
nous Dynamic Random Access Memory ceramic mo-
dule, containing 1,342,177,280 bits. It is organized
with ten banks of 128 Mbit. Each Bank has a 32-bit in-
terface, and is selected with specific CS#. All other si-
gnals are common to the twenty 64 MBit SDRAM
memories.
It is particularly well suited for use in high performance
and high density aerospace applications, such as solid
state recorder for airbornes and satellites.
The 3DSD1280-323H is packaged in a 84-pin CQFJ.
DQ[0...15]
A[0...11]
A[0...12]
BSO
BS1
A12/NC
GND
DQ[0...15]
GND
VCC
BSO
BS1
DQ[0...15]
A[0...11]
BSO
BS1
A12/NC
GND
VCC
VCC
CLK
RAS
WE
CS[0...9]
CKE
UDQM
LDQM
CAS
CLK
RAS
CAS
WE
CS[0...9]
CKE
UDQM
LDQM
CLK
RAS
CAS
WE
CS[0...9]
CKE
DQM
Block Diagram
1.28 Gbit SDRAM
3DSD1280-323H
3D PLUS, 641 rue Hlne Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
ELECTRONICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
Input Voltage
Vin
- 0.3 to Vcc+0.3
V
Storage temperature
Tstg
- 55 to +150
C
Short Circuit Output Current
Iout
TBD
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to GND, Ta = -15C to +80C)
Parameter
Symbol
Min
Typ
Max
Units
Power Supply Voltage
Vcc, VccQ
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
-
Vcc+0.3
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice.
3D PLUS, 1999
C
3DFP-0008
Rev : 2
December 1999
Page 2/2
MAIN SALES OFFICE
France
3D PLUS
Tel : 33 (0)1 30 83 26 50
Fax : 33 (0)1 39 56 25 89
e-mail : sales@3d-plus.com
TEST TOOLS
3DSD1280-323H
Support YAMAICHI IC51-1004-405-1
PRODUCT MARKING
- 3D PLUS Logo
- Part Number
- Date Code (ww,yy)
- Serial Number on request
A
34.29 0.25
B
33.02 0.50
b
0.432 typ.
r
0.762 ref.
h
Dimensions (mm)
e
1.27
18.35 0.35
3DSD1280-323H/PROTO
3DSD1280-323H/883D-S
CQFJ 84 - prototype ( 0C to +70C )
CQFJ 84 - MIL STD 883D - Class S ( -15C to +80C )
ORDERING INFORMATION
PN : 3DSD1280-323H
/883D-S
DC : 2599
Output Voltage
Vout
- 0.3 to Vcc+0.3
V
Power Supply Voltage
Vcc
- 0.3 to +4.6
V
Power Supply Voltage for Output
Vccq
- 0.3 to +4.6
V
Operating Temperature
-15
T
ope
+80
C
Operating with one bank oper-
-ation
I
CC1
300
mA
Standby in power down mode
I
CC2
20
mA
Operating (burst)
I
CC3
300
mA
(Stressed greater than those listed may cause permanent damage to the device)
e
b
A
A
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