5.0mm INFRARED EMITTING DIODE
520E940C
REV:A / 0
PACKAGE DIMENSIONS
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page :
1
QR0202-10B
Note:
1.All Dimensions are in millimeters.
2.Tolerance is 0.25mm(0.010 ")
Unless otherwise specified.
3.Protruded resin under flange
is 1.5mm(0.059 ") max.
4.Lead spacing is measured where
the leads emerge from the package.
5.Specification are subject to change
without notice
5.0mm INFRARED EMITTING DIODE
520E940C
REV:A / 0
FEATURES
* EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY
* LOW FORWARD VOLTAGE
* SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY
*HIGH RELIABILITY
CHIP MATERIALS
* Dice Material : GaA1As/GaAs
* Lens Color : WATER CLEAR
ABSOLUTE MAXIMUM RATING : ( Ta = 25C )
SYMBOL PARAMETER INFRARED
UNIT
P
D
Power
Dissipation
100
mW
V
R
Reverse
Voltage
5
V
I
F
Average Forward Current
100
mA
Topr Operating
Temperature
Range
-35C to 85C
Tstg Storage
Temperature
Range
-35C to 85C
Lead Soldering Temperature1.6mm(0.063 inch) From Body250C 5C for 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25C )
SYMBOL PARAMETER
TEST
CONDITION
MIN. TYP. MAX. UNIT
V
F
Forward
Voltage
I
F
=
10mA
I
F
=
50mA
1.2
1.4
1.6
V
I
R
Reverse
Current
V
R
= 5V
10
A
P
Peak
Emission
Wavelength
I
F
=
10mA 940 nm
21/2
Half Intensity Angle
IF =
10mA 22
deg
I
E
Radiant
Intensity
I
F
=
10mA 30 mw/sr
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page :
2
QR0202-10C
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