2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375- 6602 www.point9.com www.rfmosfet.com
P
D
Power Dissipation
87.5W
BV
DSS
Drain-source breakdown voltage
70V
V
GSS
Gate-source breakdown voltage
20V
I
D
Drain Current
5A
T
stg
Storage temperature
-65 to 150
C
T
j
Maximum operating junction temperature
200
C
R
THj-case
Thermal resistance junction-case
Max. 2.0
C/W
GOLD METALLISED MULTI-PURPOSE
SILICON DMOS RF FET
Parameter
Test Conditions
Min. Typ. Max.
Unit
BV
DSS
Breakdown voltage, drain source V
GS
=0 I
D
=100mA
70
Vdc
I
DSS
Drain leakage current
V
DS
=28V
V
GS
=0
2
mAdc
I
GSS
Gate leakage current
V
GS
=20V
V
DS
=0
1
Adc
V
GS(th)
Gate threshold voltage
I
D
=10mA
V
DS
=V
GS
1
7
Vdc
gfs
Transconductance (300
s pulse)
V
DS
=10V
I
D
=2A
1.6
Mhos
G
PS
Common source power gain
P
O
=20W
13
dB
Drain efficiency
V
DS
=28V I
DQ
=0.2A
60
%
VSWR
Load mismatch tolerance
f=400MHz
20:1
C
iss
Input capacitance
V
DS
=0V
V
GS
=-5V f=1MHz
120
pF
C
oss
Output capacitance
V
DS
=28V
V
GS
=0
f=1MHz
50
pF
C
rss
Reverse transfer capacitance
V
DS
=28V
V
GS
=0
f=1MHz
5
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.
DM
Millimeter
TOL
Inches
TOL
A
16.51
.25
.650
.010
B
6.35
.13
.250
.005
C
1.52
.13
.060
.005
D
3.30
.13
.130
.005
E
18.90
.13
.744
.005
F
1.27 X 45
.13
.05 X 45
.005
G
2.16
.13
.085
.005
H
14.22
.05
.560
.005
I
1.52
.13
.060
.005
J
6.35
.13
.250
.005
K
0.10
.02
.004
.001
M
5.08
MAX
.200
MAX
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
C unless otherwise stated)
U.S. PATENTS 5,121,176 & 5,179,032
GLOBAL PATENTS PENDING
D1014 TetraFET
20W - 28V - 500MHz
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
C unless otherwise stated)
DIMENSIONS
P O I N T N I N E
T e c h n o l o g i e s , I n c .
FEATURES
EXTRA LOW C
rss
BROAD BAND
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 500MHz
METAL GATE
D
K
E
J
G
H
I
M
A
B
C
F
D1014 TetraFET
P O I N T N I N E
T e c h n o l o g i e s , I n c .
D1014 TetraFET
P O I N T N I N E
T e c h n o l o g i e s , I n c .
2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com
D1014 TetraFET
P O I N T N I N E
T e c h n o l o g i e s , I n c .
2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com
*D1014
*PSPICE MODEL FOR POINT NINE TECHNOLOGIES, Inc RF N-CHANNEL VERTICAL DMOS POWER FET
*PRELIMINARY DATA, SEPTEMBER 1995
*TO GENERATE S PARAMETERS MATCHING DATA SHEET, SET VG=3.2V FOR IDQ=1A
*
____GATE
*
I
____DRAIN
*
I
I
____SOURCE
*
I
I
I
.SUBCKT D1014 10 20 30
LG
10
11
1.71N
RGATE
11
12
0.78
CG
10
30
0.05P
CRSS
12
17
2.5P
CISS
12
14
60P
LS
14
30
0.30N
CS
14
30
0.1P
LD
17
20
0.85N
CD
20
30
1.44P
R_RC
16
17
35.73
C_RC
14
16
11.8P
MOS
13
12
14 15
D1014MOS L=0.71U W=0.056332 ;D G S B LEVEL1
JFET
17
14
13
D1014JF
;D G S
DBODY
14
17
D1014DB
;P N
.MODEL D1014MOS NMOS
(VTO=2.2 KP=1.8E-5 LAMBDA=0.1 RD=0.25 RS=0.5)
.MODEL D1014JF NJF
(VTO=-7.5 BETA=0.04 LAMBDA=1)
.MODEL D1014DB D
(CJO=88.5P RS=0.25 VJ=0.7 M=0.33 BV=70)
.ENDS
D1014.s2p
!
Vds=28V, Idq=1A
#
MHz S MA R 50
!Freq
S11
S21
S12
S22
!MHz
mag
ang
mag
ang
mag
ang
mag
ang
100
0.794
-158
14.622
69
0.0115
-7
0.61
-145
200
0.881
-167
5.821
42
0.0061
3
0.794
-156
300
0.923
-171
3.02
28
0.0068
60
0.871
-162
400
0.923
-176
1.82
18
0.117
77
0.902
-167
500
0.937
-179
1.439
15
0.0168
76
0.923
-169
600
0.952
177
1.057
13
0.0234
75
0.945
-171
700
0.966
174
0.676
10
0.0285
74
0.966
-174
800
0.966
171
0.543
5
0.0335
69
0.955
-177
900
0.977
167
0.447
1
0.0394
64
0.966
178
1000
0.966
165
0.359
1
0.0432
64
0.955
178
2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375- 6602 www.point9.com www.rfmosfet.com
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