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PNP SILICON PLANAR HIGH SPEED
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 12 Volt V
CEO
* f
T
=400MHz
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-4
V
Base Current
I
B
-40
mA
Continuous Collector Current
I
C
-200
mA
Power Dissipation at T
amb
=25C
P
tot
300
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN. TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
V
I
C
=-10
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-12
V
I
C
=-10mA
Collector Cut-Off
Current
I
CBO
-0.1
A
V
CB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.2
-0.5
V
V
V
I
C
=-10mA, I
B
=-1mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.76
-0.82
-1.7
-0.98
-1.2
V
V
V
I
C
=-10mA, I
B
=-1mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, I
B
=-10mA*
Static Forward Current
Transfer Ratio
h
FE
30
40
20
150
I
C
=-10mA, V
CE
=-0.3V*
I
C
=-30mA, V
CE
=-0.5V*
I
C
=-100mA, V
CE
=-1V*
Transition Frequency
f
T
400
MHz
I
C
=-30mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
6
pF
V
CB
=-5V, f=140KHz
Input Capacitance
C
ibo
6
pF
V
EB
=-0.5V, f=140KHz
Switching Times
t
on
60
ns
I
C
=-30mA,
I
B1
=I
B2
=-1.5mA
t
off
90
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX510
3-186
C
B
E
-12
-50
400
200
0
800
1000
600
TYPICAL CHARACTERISTICS
I
C
v f
T
I
C
-
(mA)
f
T
-

(M
Hz)
V
CE(sat)
v I
C
V
CE(sat)
-
(Volts)
I
C
- (mA)
V
CB
=-5V
f=100MHz
0
-10
-20
-30
-40
-5
-100
-50
0
-200
-250
-150
I
B
=-5.0mA
0
-1
-2
-3
-4
-20
-8
-4
0
-16
-20
-12
-8
-16
0
-4
-1.1
-20
0
-40
-60
-0.6
-0.7
-0.8
-0.9
-1.0
-80
I
B
=-4.5mA
I
B
=-4.0mA
I
B
=-3.5mA
I
B
=-3.0mA
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
I
C
-
(
m
A)
I
C
-
(
m
A)
V
BE
-
(Volts)
V
CE(sat)
-
(Volts)
I
B
=-100
A to 0
A in 10
A steps
I
B
=-100
A
I
B
=0
A
-100
V
BE
v I
C
V
CE
v I
C
I
B
=-10mA
I
B
=-8mA
I
B
=-6mA
I
B
=-4mA
I
B
=-2mA
I
B
=-1mA
ZTX510
3-187
PNP SILICON PLANAR HIGH SPEED
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 12 Volt V
CEO
* f
T
=400MHz
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-4
V
Base Current
I
B
-40
mA
Continuous Collector Current
I
C
-200
mA
Power Dissipation at T
amb
=25C
P
tot
300
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN. TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
V
I
C
=-10
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-12
V
I
C
=-10mA
Collector Cut-Off
Current
I
CBO
-0.1
A
V
CB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.2
-0.5
V
V
V
I
C
=-10mA, I
B
=-1mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.76
-0.82
-1.7
-0.98
-1.2
V
V
V
I
C
=-10mA, I
B
=-1mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, I
B
=-10mA*
Static Forward Current
Transfer Ratio
h
FE
30
40
20
150
I
C
=-10mA, V
CE
=-0.3V*
I
C
=-30mA, V
CE
=-0.5V*
I
C
=-100mA, V
CE
=-1V*
Transition Frequency
f
T
400
MHz
I
C
=-30mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
6
pF
V
CB
=-5V, f=140KHz
Input Capacitance
C
ibo
6
pF
V
EB
=-0.5V, f=140KHz
Switching Times
t
on
60
ns
I
C
=-30mA,
I
B1
=I
B2
=-1.5mA
t
off
90
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
ZTX510
3-186
C
B
E
-12
-50
400
200
0
800
1000
600
TYPICAL CHARACTERISTICS
I
C
v f
T
I
C
-
(mA)
f
T
-

(M
Hz)
V
CE(sat)
v I
C
V
CE(sat)
-
(Volts)
I
C
- (mA)
V
CB
=-5V
f=100MHz
0
-10
-20
-30
-40
-5
-100
-50
0
-200
-250
-150
I
B
=-5.0mA
0
-1
-2
-3
-4
-20
-8
-4
0
-16
-20
-12
-8
-16
0
-4
-1.1
-20
0
-40
-60
-0.6
-0.7
-0.8
-0.9
-1.0
-80
I
B
=-4.5mA
I
B
=-4.0mA
I
B
=-3.5mA
I
B
=-3.0mA
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
I
C
-
(
m
A)
I
C
-
(
m
A)
V
BE
-
(Volts)
V
CE(sat)
-
(Volts)
I
B
=-100
A to 0
A in 10
A steps
I
B
=-100
A
I
B
=0
A
-100
V
BE
v I
C
V
CE
v I
C
I
B
=-10mA
I
B
=-8mA
I
B
=-6mA
I
B
=-4mA
I
B
=-2mA
I
B
=-1mA
ZTX510
3-187