- 1 - Letex Technology Corp.
Photocoupler
Part Name: LA211
LA211 photocoupler is an optically coupled pair
employing a GaAs infrared LED and a silicon NPN
phototransistor.
Applications
Computer terminals
System appliances
Signal transmission between circuits of different
potentials
Features
SOP package 4 Pin type in miniature design
8
0% minimun current transfer ratio
1500Vrms Input/Output isolation
1. LED Anode
2. LED Cathode
3. Emitter
4. Collector
16
A
2
1
LA211
3
4
1
2
3
4
Dimensions
(Unit: mm
inch
)
Letex
- 2 - Letex Technology Corp.
Photocoupler
Part Name: LA211
Absolute Maximum Ratings
(Ambient Temperature: 25)
Item
Symbol
Rating
Units
Note
Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Input
Peak Forward Current
I
FP
1
A
Collector to Emitter Voltage
Vceo
40
V
Ic=1mA, I
B
=0
Emitter to Collector Voltage
Veco
6
V
I
E
=100A, I
B
=0
Collector Current
Ic
50
mA
Output
Power Dissipation
Pc
150
mW
I/O Breakdown Voltage
V
I/O
1500
Vrms
RH=60%, 1min
Power Dissipation
P
D
200
mW
Storage Temperature
Tstg
-55 to +125
Operating Temperature
Top
-55 to +100
Soldering Temperature
T
Sol
260
10 seconds max.
Electrical Specifications
(Ambient Temperature: 25)
Item
Symbol
MIN.
TYP.
MAX.
Units
Conditions
Forward Voltage
V
F
1.2
1.4
V
I
F
=20mA
Reverse Current
I
R
10
A
V
R
=5V
Input
Junction Capacitance
Ct
25
pF
V=0, f=1.0MHz
C-E Breakdown Voltage
Vceo
35
V
Ic=0.5mA
E-C Breakdown Voltage
Veco
5
V
Ie=0.1mA
Output
Collector Dark Current
Iceo
100
nA
Vce=10V, I
F
=0
BIN GRADE
A
80
160
B
130
260
C
200
400
Current Transfer Ratio
CTR
D
300
600
I
F
=5mA, Vce=5V
Collector Saturation Voltage
Vce(sat)
0.4
V
I
F
=10mA, Ic=1mA
Isolation Resistance
R
I/O
10
9
V=500V DC
Isolation Capacitance
C
I/O
1.0
pF
V=0, f=1.0MHz
Rise Time
t
r
3
s
Vce=5V, Ic=2mA,
Coupled
Fall Time
t
f
3
s
RL=100
- 3 - Letex Technology Corp.
Photocoupler
Reference Data
10
0.2
0
0
Co
lle
c
t
o
r-
Em
itt
e
r s
a
tu
rea
tio
n
v
o
lta
g
e
(V
)
0.4
0.6
0.8
Forward current (mA)
20
30
40
50
60
Collector-Emitter saturation voltage Vs.
Forward current
1.0
1.2
Test circuit for resopnse time
Fo
rw
a
rd
cu
rr
e
n
t
(
m
A)
Forward voltage (V)
-25
0
Forward current Vs.
Forward voltage
Ambient temperature (
)
75
50
-25
0
Ambient temperature (
)
75
50
100
Forward current Vs.
Ambient temperature
Fo
rw
a
rd
cu
rr
e
n
t
(
m
A)
10
20
30
40
50
60
Collector power dissipation Vs.
Ambient temperature
150
Colle
c
t
o
r po
w
e
r dis
sipa
tion
(m
W
)
50
100
0
25
100
125
0
25
125
Peak forward current Vs.
Duty ratio
Duty ratio
Pe
a
k f
o
rw
a
rd cu
rr
en
t (
m
A
)
10
20
50
100
200
500
1000
2000
5 10 2
5
5
2
5
2
-3
-2
10
-1
10
0
10
3.0
2.5
1.0
0.5
1.5
2.0
1
10
50
200
0
Pulse width 100us
Ta = 25
2
5
100
500
20
25
0
25
50
Ta = 75
CT
R (
%
)
Forward current (mA)
1
1
Current transfer ratio Vs.
Forward current
2
5
10
20
50
20
40
60
80
100
120
140
160
180
200
Vce = 5V
Ta = 25
0
0
Co
lle
c
t
o
r cu
rr
e
n
t
(m
A)
Collector-Emitter voltage (V)
Collector current Vs.
Collector-Emitter voltage
Ta = 25
1
2
3
4
5
6
7
8
9
5
10
15
20
25
30
I
F
= 30mA
20mA
10mA
5mA
Pc(Max)
Re
lat
iv
e
CT
R (
%
)
Ambient temperature (
)
-25
0
0
25
100
50
75
Relative CTR Vs.
Ambient temperature
50
100
150
I
F
= 5mA
Vce = 5V
Co
lle
c
t
o
r-
Em
itt
e
r s
a
tu
rat
ion
v
o
lta
ge (V
)
Ambient temperature (
)
-25
0
0
25
100
50
75
Collector-Emitter saturation voltage Vs.
Ambient temperature
I
F
= 20mA
Ic = 1mA
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
Vce = 20V
Collector dark current Vs.
Ambient temperature
Co
lle
c
t
o
r d
a
rk cu
rr
e
n
t
(A)
Ambient temperature (
)
-11
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
0
25
50
75
100
-25
7
m
A
5
m
A
3
m
A
1
m
A
Ic
=
0
.
5
mA
Ta = 25
Resp
o
nse
tim
e
(
s
)
Load resistance (k
)
0.1
Response time Vs.
Load resistance
Vce = 2V
Ic = 2mA
Ta = 25
0.1 0.2 0.5 1 2
5
10
0.2
0.5
1
2
5
10
20
50
100
200
500
Vcc
R
L
Output
R
D
Input
10%
Input
Output
90%
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