The
OHT10CB
is a high-sensitivity NPN silicon phototransistor
mounted in durable, hermetically sealed TO-18 metal can which provide years
of reliable performance, even under demanding conditions such as use outdoors.
FEATURES
Narrow angular response
Durable
High reliability in demanding environments
Two leads( Collector, Emitter )
APPLICATIONS
Optical counters
Optical detectors
Infrared sensors
Encoders
Smoke detectors
ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Cond.
Min.
Typ.
Max.
Unit
Collector dark current
I
CEO
V
CEO
=10V
1
200
Light current
I
L
V
CE
=10v,200Lux
1.5
6.0
16
C-E saturation voltage
V
ce
(sat)
Ic=5,2000Lux
0.2
0.4
V
Rise time
tr
Vcc=10v,Ic=5
8.0
usec.
Fall time
tf
RL=100
10
usec.
Spectral sensitivity
Peak wavelenght
p
880
Half angle
15
deg.
MAXIMUM RATINGS
Symbol
Unit
C-E voltage
V
CEO
V
E-C voltage
V
ECO
V
Collector current
Ic
Collector power dissipation
P
D
mW
Operating temp.
Topr.
Storage temp.
Tstg.
Soldering temp.
(1)
Tsol.
(1)For MAX.5seconds at the position of 2mm from the package
500~1,050
P
hoto transistors
OHT10CB
(Ta=25)
( Ta=25 )
OPTO HiTEC.Co.,Ltd.
1
4
50
260
-30+125
-50+150
40
Item
Rating
Item
Switching speeds
150
OPTO HiTEC.Co.,Ltd.
2
OHT10CB
P
hoto transistors
0
2
4
6
8
10
5
10
()
(V)
Ev=100Lux
Ev=200Lux
Ev=300Lux
Ev=400Lux
Ta=25C
Co
l
l
ect
or curr
e
nt
I
c
Collector-Emitter voltage Vc
E
Collector-Emitter voltage
Collector current Vs
1000
0
400 500
20
40
800
600 700
900
1100 (nm)
Ta=25C
60
80
100
(%)
R
e
lstive sen
si
t
i
vity
S
Wavelength
Relstive sensitivity Vs
Wavelength
10
10
()
()
Ta=25C
0
1
10
2
10
3
10
2
10
3
10
4
10
5
Ic=5
Vcc=10V
tf
tr
td
Load resistance
Switching time Vs
S
w
it
c
h
ing
t
i
me
t
r
,
t
f
Load resistance R
L
0
30
60
90
120
150()
0
40
80
120
160
200
()
C
o
l
l
ect
o
r
p
o
w
er
d
i
s
s
i
p
a
t
i
o
n
P
c
Ambient temperature Ta
Vs Ambient temperature
Collector power dissipation
100
50
0
100
50
0
+20
+4
0
+
6
0
+
8
0
+
1
0
0
-
1
0
0
-
8
0
-
6
0
-4
0
-20
50
Relative sensitivity (%)
Radient Pattern
Angle (deg.)
illuminance
Collector current Vs
Co
l
l
ec
t
o
r
c
u
r
r
en
t
I
c
10
10
-2
10
-1
10
0
()
10
1
illuminance Ev
10
1
10
2
3
10
(Lux)
V c
E
=1 0v
Ta =25
Ambient temperature Ta
Dark current Vs
Ambient temperature
D
a
rk
c
u
r
r
e
n
t
I
c
E
o
10
0
- 1
10
1
10
0
10
2
(nA)
3
10
60
20
40
80
100
120
(C)
V
CE
=10V
Emitter
2.
5
4
0
.
2
5
4
5
Ni ckel
Dis posal
Cle ar Glass
0
.
4
5
1
1
1
14.01.0
6.20.5
4.50.2
4
.
6
5
0
.
2
0.4
Collector
5
.4
0
.2
2
Dimensions ()
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