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Электронный компонент: OM5N100NK

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3.1 - 41
3.1
1000V, Up To 6 Amp, N-Channel
MOSFETs In A TO-3 Package
4 11 R1
Supersedes 3 12 R0
POWER MOSFETS IN A TO-3 PACKAGE
FEATURES
TO-3 Hermetic Package, .060 Dia. Leads
Fast Switching
Low R
DS(on)
1000 Volt, Size 5 Die
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
OM5N100NK
OM6N100NK
MECHANICAL OUTLINE
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151
0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.063
0.058
2 PLCS.
0.135
MAX.
0.875
MAX.
1.53
REF.
Pin Connection
Pin 1: Gate
Pin 2: Source
Case: Drain
1
2
PART NUMBER
V
DS
(V)
R
DS(on)
( )
I
D
(A)
OM5N100NK
1000
3.0
5.0
OM6N100NK
1000
2.0
6.0
3.1
205 Craw
fo
rd St
re
et, Le
o
m
inster, MA 01
4
53 USA (50
8) 534
-57
76 FAX (508) 537-4246
OM5N100NK - OM6N100NK
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V, V
DS
= 0
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V, V
DS
= 0
I
DSS
Zero Gate Voltage
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Drain Current
1.0
mA
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125 C
I
D(on)
On-State Drain Current
5.0
A
V
DS
> I
D(on)
x R
DS(on)
Max.,
V
GS
= 10 V
R
DS(on)
Static Drain-Source On-State
3.0
V
GS
= 10 V, I
D
= 2.5 A
Resistance
1
- OM5N100NK
R
DS(on)
Static Drain-Source On-State
6.0
V
GS
= 10 V, I
D
= 2.5 A
Resistance
1
- OM5N100NK
T
C
= 100 C
R
DS(on)
Static Drain-Source On-State
2.0
V
GS
= 10 V, I
D
= 3.0 A
Resistance
1
- OM6N100NK
R
DS(on)
Static Drain-Source On-State
4.0
V
GS
= 10 V, I
D
= 3.0 A
Resistance
1
- OM6N100NK
T
C
= 100 C
DYNAMIC
g
fs
Forward Transductance
4.0
S
V
DS
= 25V, I
D
= 3.5 A
C
iss
Input Capacitance
2800
pF
V
GS
= 0
C
oss
Output Capacitance
350
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
130
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
65
ns
V
DD
= 400 V, I
D
= 6 A
t
r
Rise Time
55
ns
R
g
= 7
W
, V
GS
= 10 V
t
d (off)
Turn-Off Delay Time
62
ns
t
f
Fall Time
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
6
A
Modified MOSPOWER
(Body Diode)
symbol showing
I
SM
Source Current
2
24
A
the integral P-N
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
2.5
V
T
C
= 25 C, I
S
= 6 A, V
GS
= 0
t
rr
Reverse Recovery Time
1100
ns
I
F
= I
S
, V
DD
= 100V,
dl
F
/ds = 100 A/
m
s, T
J
= 150C
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
1.5%.
2 Pulse Width limited by safe operating area.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Symbol
Parameter
OM5N100NK OM6N100NK
Units
V
DS
Drain-Source Voltage
1000
1000
V
V
DGR
Drain-Source Voltage (R
GS
= 20k )
1000
1000
V
I
D
@ T
C
= 25C
Continuous Drain Current
5.0
6.0
A
I
D
@ T
C
= 100C
Continuous Drain Current
3.1
3.7
A
I
DM
Pulsed Drain Current
1
24
24
A
V
GS
Gate-Source Voltage
20
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
130
130
W
P
D
@ T
C
=100C
Maximum Power Dissipation
51
51
W
Junction-To-Case
Linear Derating Factor
1.00
1.00
W/C
Junction-To-Ambient Linear Derating Factor
.033
.033
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10secs.)
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
THERMAL RESISTANCE (Maximum) at T
A
= 25C
R
thJC
Junction-To-Case Max.
1.0
C/W
R
thJA
Junction-to-Ambient
30
C/W
Free Air Operation
V
DD
= 800 V, I
D
= 6 A,
R
G
= 7 , V
BS
= 10 V
G
D
S