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3.1 - 85
3.1
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
Same as IRFM 150 - 450 Series
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
@ 25
C
OM6019SA
OM6020SA
OM6017SA
OM6018SA
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R4
Supersedes 1 07 R3
PART NUMBER
V
DS
R
DS(on)
I
D
OM6017SA
100 V
.065 25
A
OM6018SA
200 V
.100 25
A
OM6019SA
400 V
.33 13
A
OM6020SA
500 V
.42 11
A
SCHEMATIC
POWER RATING
3.1 - 86
OM6017SA - OM6020SA
3.1
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
STATIC P/N OM6017SA
STATIC P/N OM6018SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= +20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= + 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= -20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
35
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
30
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
1.1
1.3
V
V
GS
= 10 V, I
D
= 20 A
V
DS(on)
Static Drain-Source On-State
1.36
1.60
V
V
GS
= 10 V, I
D
= 16 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.55 0.65
V
GS
= 10 V, I
D
= 20 A
R
DS(on)
Static Drain-Source On-State
.085
.100
V
GS
= 10 V, I
D
= 16 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.09
0.11
V
GS
= 10 V, I
D
= 20 A,
R
DS(on)
Static Drain-Source On-State
0.14
0.17
V
GS
= 10 V, I
D
= 16 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
9.0
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
g
fs
Forward Transductance
1
10.0
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
C
iss
Input Capacitance
2700
pF
V
GS
= 0
C
iss
Input Capacitance
2400
pF
V
GS
= 0
C
oss
Output Capacitance
1300
pF
V
DS
= 25 V
C
oss
Output Capacitance
600
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
470
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
250
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
28
ns
V
DD
= 30 V, I
D
@
20 A
t
d(on)
Turn-On Delay Time
25
ns
V
DD
= 75 V, I
D
@
16 A
t
r
Rise Time
45
ns
R
g
= 5.0
W
, V
G
= 10V
t
r
Rise Time
60
ns
R
g
= 5.0
W
,V
GS
= 10V
t
d(off)
Turn-Off Delay Time
100
ns
t
d(off)
Turn-Off Delay Time
85
ns
t
f
Fall Time
50
ns
t
f
Fall Time
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 40
A
Modified MOSPOWER
I
S
Continuous Source Current
- 30
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 160
A
the integral P-N
I
SM
Source Current
1
- 120
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2.5
V
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 2
V
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
t
rr
Reverse Recovery Time
400
ns
T
J
= 150 C, I
F
= I
S
,
t
rr
Reverse Recovery Time
350
ns
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
(
W
)
(
W
)
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
STATIC P/N OM6019SA
STATIC P/N OM6020SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= +20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS
= +20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
15
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
13
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
2.0
2.64
V
V
GS
= 10 V, I
D
= 8.0 A
V
DS(on)
Static Drain-Source On-State
2.1
2.94
V
V
GS
= 10 V, I
D
= 7.0 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.25
.33
V
GS
= 10 V, I
D
= 8.0 A
R
DS(on)
Static Drain-Source On-State
0.3
0.42
V
GS
= 10 V, I
D
= 7.0 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
0.50 0.66
V
GS
= 10 V, I
D
= 8.0 A,
R
DS(on)
Static Drain-Source On-State
0.66
0.88
V
GS
= 10 V, I
D
= 7.0 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
g
fs
Forward Transductance
1
6.0
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
C
iss
Input Capacitance
2900
pF
V
GS
= 0
C
iss
Input Capacitance
2600
pF
V
GS
= 0
C
oss
Output Capacitance
450
pF
V
DS
= 25 V
C
oss
Output Capacitance
280
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 200 V, I
D
@
8.0 A
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 210 V, I
D
@
7.0 A
t
r
Rise Time
40
ns
R
g
=5.0
W
, V
GS
=10V
t
r
Rise Time
46
ns
R
g
= 5.0
W
, V
GS
= 10 V
t
d(off)
Turn-Off Delay Time
80
ns
t
d(off)
Turn-Off Delay Time
75
ns
t
f
Fall Time
30
ns
t
f
Fall Time
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 15
A
Modified MOSPOWER
I
S
Continuous Source Current
- 13
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 60
A
the integral P-N
I
SM
Source Current
1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 1.6
V
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 1.4
V
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
t
rr
Reverse Recovery Time
600
ns
T
J
= 100 C, I
F
= I
S
,
t
rr
Reverse Recovery Time
700
ns
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
3.1 - 87
OM6017SA - OM6020SA
3.1
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
(
W
)
(
W
)
OM6017SA - OM6020SA
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OM6017SA OM6018SA OM6019SA OM6020SA Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25C
Continuous Drain Current
2
25
25
13
11
A
I
D
@ T
C
= 100C
Continuous Drain Current
2
16
16
8
7
A
I
DM
Pulsed Drain Current
1
100
80
54
40
A
V
GS
Gate-Source Voltage
20
20
20
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1.0
1.0
1.0
1.0
W/C
Junction To Ambient
Linear Derating Factor
.020
.020
.020
.020
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
2 Package Pin Limitation = 15 Amps
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.0
C/W
R
thJA
Junction-to-Ambient
50
C/W Free Air Operation
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINE
.040 DIA.
3 PLCS.
.150
.260
MAX
.040
.940
.500
MIN.
.150
.125
2 PLCS.
.290
.125 DIA.
2 PLS.
.200
.540
.250
.740
.540
.100
2 PLCS.
.300
1
2
3
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
NOTES:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP