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Электронный компонент: OM6057SB

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3.1 - 107
3.1
High Current, High Voltage 100V Thru 1000V,
Up To 190 Amp N-Channel, Size 7 MOSFETs
POWER MOSFETS IN A HERMETIC ISOLATED
POWER BLOCK PACKAGE
4 11 R0
OM6060SB
OM6061SB
OM6058SB
OM6059SB
OM6056SB
OM6057SB
Preliminary Data Sheet
FEATURES
Size 7 Die, High Energy
Rugged Package Design
Solder Terminals
Very Low R
DS(on)
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
technology combined with a package designed specifically for high efficiency, high current
applications. They are ideally suited for Hi-Rel requirements where small size, high
performance and high reliability are required, and in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
@ 25C
PART NUMBER
V
DS
R
DS(on)
I
D
(Continuous)
OM6056SB
100 V
.008
190 A
OM6057SB
200 V
.018
105 A
OM6058SB
500 V
.095
58 A
OM6059SB
600 V
.140
48 A
OM6060SB
800 V
.300
34 A
OM6061SB
1000 V
.500
18 A
PIN CONNECTION
MECHANICAL OUTLINE
AND SCHEMATIC
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 107
3.1
OM6056SB - OM6061SB
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
C unless otherwise noted)
Parameter
Symbol
OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB
Unit
Drain Source Voltage
V
DS
100
200
500
600
800
1000
V
Drain Gate Voltage (R
GS
= 1.0 M
)
V
DGR
100
200
500
600
800
1000
V
Continuous Drain Current @ T
C
= 25C 2
I
D
190
105
58
48
34
18
A
Continuous Drain Current @ TC = 100C 2
I
D
82
44
25
19
15
7.5
A
Pulsed Drain Current1
I
DM
440
250
130
110
78
42
A
Max. Power Dissipation @ T
C
= 25C
P
D
570
W
Max. Power Dissipation @ T
C
= 100C
P
D
245
W
Linear Derating Factor Junction-to-Case
4.35
W/C
Linear Derating Factor Junction-to-Ambient
.033
W/C
Operating and Storage Temp. Range
T
J
, T
stg
-55 to +150
C
Lead Temperature (1/16" from case for 10 sec.)
230
C
Notes: 1. Pulse Test: Pulse Width
300
sec, Duty Cycle
2%. 2. Package Pin Limitation: 100 Amps @ 125C.
THERMAL RESISTANCE (MAXIMUM)
@ T
A
= 25
C
Junction-to-Case
R
thJC
.23
C/W
Junction-to-Ambient (Free Air Operation)
R
thJA
30
C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
V
GS(th)
All
2.0
4.0
V
Gate-Source Leakage Current
V
GS
= 20 V
DC
I
GSS
All
100
nA
Off State Drain-Source Leakage
V
DS
= V
DSS
x 0.8 T
C
= 25C
I
DSS
All
10
A
V
GS
= 0V T
C
= 125C
I
DSS
All
.10
mA
OM6056SB
100
OM6057SB
200
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 A
V
DSS
OM6058SB
500
V
OM6059SB
600
OM6060SB
800
OM6061SB
1000
OM6056SB
.008
OM6057SB
.018
Static Drain-Source On-Resistance
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6058SB
.095
OM6059SB
.140
OM6060SB
.300
OM6061SB
.500
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108