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3.1 - 75
3.1
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
4 11 R5
Supersedes 1 07 R4
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
FEATURES
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
OM6107SC
OM6108SC
OM6105SC
OM6106SC
OM6007SC
OM6008SC
OM6005SC
OM6006SC
PART NUMBER
V
DS
R
DS(on)
I
D
OM6005SC/OM6105SC
100 V
.065 35
A
OM6006SC/OM6106SC
200 V
.095 30
A
OM6007SC/OM6107SC
400 V
0.3 15
A
OM6008SC/OM6108SC
500 V
0.4 13
A
Note:
OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
WITH ZENER CLAMPS
OM6005SC - 6008SC
OM6105SC - 6108SC
2 - SOURCE
3 - GATE
ZENERS
1 - DRAIN
3 - GATE
1 - DRAIN
2 - SOURCE
3.1 - 76
OM6005SC - OM6108SC
3.1
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V)
STATIC P/N OM6106SC/OM6006SC (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
I
GSS
Gate-Body Leakage (OM6105)
500
nA
V
GS
= 12.8 V
I
GSS
Gate-Body Leakage (OM6106)
500
nA
V
GS
= 12.8 V
I
GSS
Gate-Body Leakage (OM6005)
100
nA
V
GS
= 20 V
I
GSS
Gate-Body Leakage (OM6006)
100
nA
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
35
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
30
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
1.1
1.3
V
V
GS
= 10 V, I
D
= 20 A
V
DS(on)
Static Drain-Source On-State
1.36
1.52
V
V
GS
= 10 V, I
D
= 16 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.55 0.65
V
GS
= 10 V, I
D
= 20 A
R
DS(on)
Static Drain-Source On-State
.085
.095
V
GS
= 10 V, I
D
= 16 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.09
0.11
V
GS
= 10 V, I
D
= 20 A,
R
DS(on)
Static Drain-Source On-State
0.14
0.17
V
GS
= 10 V, I
D
= 16 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
9.0
10
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
g
fs
Forward Transductance
1
10.0 12.5
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
C
iss
Input Capacitance
2700
pF
V
GS
= 0
C
iss
Input Capacitance
2400
pF
V
GS
= 0
C
oss
Output Capacitance
1300
pF
V
DS
= 25 V
C
oss
Output Capacitance
600
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
470
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
250
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
28
ns
V
DD
= 30 V, I
D
@
20 A
t
d(on)
Turn-On Delay Time
25
ns
V
DD
= 75 V, I
D
@
16 A
t
r
Rise Time
45
ns
R
g
= 5.0
W
, V
G
= 10V
t
r
Rise Time
60
ns
R
g
= 5.0
W
,V
GS
= 10V
t
d(off)
Turn-Off Delay Time
100
ns
t
d(off)
Turn-Off Delay Time
85
ns
t
f
Fall Time
50
ns
t
f
Fall Time
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 40
A
Modified MOSPOWER
I
S
Continuous Source Current
- 30
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 160
A
the integral P-N
I
SM
Source Current
1
- 120
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2.5
V
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 2
V
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
t
rr
Reverse Recovery Time
400
ns
T
J
= 150 C, I
F
= I
S
,
t
rr
Reverse Recovery Time
350
ns
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
3.1 - 77
OM6005SC - OM6108SC
3.1
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
(T
C
= 25C unless otherwise noted)
STATIC P/N OM6107SC/OM6007SC (400V)
STATIC P/N OM6108SC/OM6008SC (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
I
GSS
Gate-Body Leakage (OM6107)
500
nA
V
GS
= 12.8 V
I
GSS
Gate-Body Leakage (OM6108)
500
nA
V
GS
= 12.8 V
I
GSS
Gate-Body Leakage (OM6007)
100
nA
V
GS
= 20 V
I
GSS
Gate-Body Leakage (OM6008)
100
nA
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
15
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
13
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
2.0
2.4
V
V
GS
= 10 V, I
D
= 8.0 A
V
DS(on)
Static Drain-Source On-State
2.1
2.8
V
V
GS
= 10 V, I
D
= 7.0 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.25
0.3
V
GS
= 10 V, I
D
= 8.0 A
R
DS(on)
Static Drain-Source On-State
0.3
0.4
V
GS
= 10 V, I
D
= 7.0 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
0.50 0.60
V
GS
= 10 V, I
D
= 8.0 A,
R
DS(on)
Static Drain-Source On-State
0.66
0.88
V
GS
= 10 V, I
D
= 7.0 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
6.0
9.6
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
g
fs
Forward Transductance
1
5.0
7.2
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
C
iss
Input Capacitance
2900
pF
V
GS
= 0
C
iss
Input Capacitance
2600
pF
V
GS
= 0
C
oss
Output Capacitance
450
pF
V
DS
= 25 V
C
oss
Output Capacitance
280
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 200 V, I
D
@
8.0 A
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 210 V, I
D
@
7.0 A
t
r
Rise Time
40
ns
R
g
=5.0
W
, V
GS
=10V
t
r
Rise Time
46
ns
R
g
= 5.0
W
, V
GS
= 10 V
t
d(off)
Turn-Off Delay Time
80
ns
t
d(off)
Turn-Off Delay Time
75
ns
t
f
Fall Time
30
ns
t
f
Fall Time
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 15
A
Modified MOSPOWER
I
S
Continuous Source Current
- 13
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 60
A
the integral P-N
I
SM
Source Current
1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 1.6
V
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 1.4
V
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
t
rr
Reverse Recovery Time
600
ns
T
J
= 100 C, I
F
= I
S
,
t
rr
Reverse Recovery Time
700
ns
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
OM6005SC - OM6108SC
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OM6005SC OM6006SC OM6007SC OM6008SC
Units
OM6105SC OM6106SC OM6107SC OM6108SC
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25C
Continuous Drain Current
2
35
30
15
13
A
I
D
@ T
C
= 100C
Continuous Drain Current
2
25
19
9
8
A
I
D
Pulsed Drain Current
1
160
120
60
52
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1
1.0
1.0
1.0
1.0
W/C
Junction To Ambient
Linear Derating Factor
.025
.025
.025
.025
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
2 Package Pin Limitation = 35 Amps
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25C
R
thJC
Junction-to-Case
1.0
C/W
R
thJA
Junction-to-Ambient
40
C/W Free Air Operation
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
POWER DERATING
MECHANICAL OUTLINE
WITH PIN CONNECTION
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP