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Электронный компонент: OM6216SS

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3.1 - 109
3.1
4 11 R4
Supersedes 1 07 R3
TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
OM6216SS
OM6217SS
OM6214SS
OM6215SS
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
Two Isolated MOSFETs In A Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
V
DS
R
DS(ON)
I
D(MAX)
OM6214SS
100V
.065
30A
OM6215SS
200V
.095
25A
OM6216SS
400V
.3
15A
OM6217SS
500V
.4
13A
SCHEMATIC
CONNECTION DIAGRAM
FET#1
FET#2
D
S
G
G
S
D
3.1 - 110
OM6214SS - OM6217SS
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OM6214SS (Per FET) (100 Volt)
STATIC P/N OM6215SS (Per FET) (200 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
I
GSSF
Gate-Body Leakage
100
nA
V
GS
= 20 V
I
GSSF
Gate-Body Leakage
100
nA
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
30
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
25
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
1.1
1.3
V
V
GS
= 10 V, I
D
= 20 A
V
DS(on)
Static Drain-Source On-State
1.36
1.52
V
V
GS
= 10 V, I
D
= 16 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
.055 .065
V
GS
= 10 V, I
D
= 20 A
R
DS(on)
Static Drain-Source On-State
.085
.095
V
GS
= 10 V, I
D
= 16 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.09
0.11
V
GS
= 10 V, I
D
= 20 A,
R
DS(on)
Static Drain-Source On-State
0.14
0.17
V
GS
= 10 V, I
D
= 16 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
9.0
10
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
g
fs
Forward Transductance
1
8.0
12.5
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
C
iss
Input Capacitance
2700
pF
V
GS
= 0
C
iss
Input Capacitance
2400
pF
V
GS
= 0
C
oss
Output Capacitance
1300
pF
V
DS
= 25 V
C
oss
Output Capacitance
600
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
470
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
250
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
28
ns
V
DD
= 30 V, I
D
@
20 A
t
d(on)
Turn-On Delay Time
25
ns
V
DD
= 75 V, I
D
@
16 A
t
r
Rise Time
45
ns
R
g
= 5.0
W
, V
G
= 10V
t
r
Rise Time
60
ns
R
g
= 5.0
W
,V
GS
= 10V
t
d(off)
Turn-Off Delay Time
100
ns
t
d(off)
Turn-Off Delay Time
85
ns
t
f
Fall Time
50
ns
t
f
Fall Time
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 30
A
Modified MOSPOWER
I
S
Continuous Source Current
- 25
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 140
A
the integral P-N
I
SM
Source Current
1
- 100
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2.5
V
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 2
V
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
t
rr
Reverse Recovery Time
400
ns
T
J
= 150 C,I
F
= I
S
,
t
rr
Reverse Recovery Time
350
ns
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(
W
)
(
W
)
3.1 - 111
OM6214SS - OM6217SS
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
T
C
= 25 unless otherwise noted
STATIC P/N OM6216SS (Per FET) (400 Volt)
STATIC P/N OM6217SS (Per FET) (500 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS
= 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS
= 0,
Voltage
I
D
= 250
m
A
Voltage
I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
m
A
I
GSSF
Gate-Body Leakage
100
nA
V
GS
= 20 V
I
GSSF
Gate-Body Leakage
100
nA
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Current
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125 C
T
C
= 125 C
I
D(on)
On-State Drain Current
1
15
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
I
D(on)
On-State Drain Current
1
13
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
2.0
2.4
V
V
GS
= 10 V, I
D
= 8 A
V
DS(on)
Static Drain-Source On-State
2.1
2.8
V
V
GS
= 10 V, I
D
= 7 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.25
0.3
V
GS
= 10 V, I
D
= 8 A
R
DS(on)
Static Drain-Source On-State
0.3
0.4
V
GS
= 10 V, I
D
= 7 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
0.50 0.60
V
GS
= 10 V, I
D
= 8 A,
R
DS(on)
Static Drain-Source On-State
0.66
0.88
V
GS
= 10 V, I
D
= 7 A,
Resistance
1
T
C
= 125 C
Resistance
1
T
C
= 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance
1
8.0
9.6
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 58A
g
fs
Forward Transductance
1
6.0
7.2
S
(
W
)
V
DS
2 V
DS(on)
, I
D
= 7 A
C
iss
Input Capacitance
2900
pF
V
GS
= 0
C
iss
Input Capacitance
2600
pF
V
GS
= 0
C
oss
Output Capacitance
450
pF
V
DS
= 25 V
C
oss
Output Capacitance
280
pF
V
DS
= 25 V
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 200 V, I
D
@
8.0 A
t
d(on)
Turn-On Delay Time
30
ns
V
DD
= 210 V, I
D
@
7.0 A
t
r
Rise Time
40
ns
R
g
=5.0
W
, V
GS
=10V
t
r
Rise Time
46
ns
R
g
= 5.0
W
, V
GS
= 10 V
t
d(off)
Turn-Off Delay Time
80
ns
t
d(off)
Turn-Off Delay Time
75
ns
t
f
Fall Time
30
ns
t
f
Fall Time
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 15
A
Modified MOSPOWER
I
S
Continuous Source Current
- 13
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current
1
- 60
A
the integral P-N
I
SM
Source Current
1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage
1
- 1.6
V
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
V
SD
Diode Forward Voltage
1
- 1.4
V
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
t
rr
Reverse Recovery Time
400
ns
T
J
= 150 C,I
F
= I
S
,
t
rr
Reverse Recovery Time
400
ns
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
dl
F
/ds = 100 A/
m
s
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300
m
sec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(
W
)
(
W
)
OM6214SS - OM6217SS
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OM6214SS OM6215SS OM6216SS OM6217SS Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25C
Continuous Drain Current
30
25
15
13
A
I
D
@ T
C
= 100C
Continuous Drain Current
20
16
9
8
A
I
DM
Pulsed Drain Current
1
140
100
60
52
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1
1.0
1.0
1.0
1.0
W/C
Junction To Ambient Linear Derating Factor
.025
.025
.025
.025
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150 -55 to 150
-55 to 150
C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
THERMAL RESISTANCE (Per FET at T
A
= 25C)
R
thJC
Junction-to-Case
1.0
C/W
R
thJA
Junction-to-Ambient
40
C/W
Free Air Operation
POWER DERATING (Per Device)
MECHANICAL OUTLINE
.140 TYP.
.200 TYP.
.270
MAX.
.060 DIA.TYP.
6 PLACES
1.375
.500
MIN.
.302
.265
.487
.752
REF.
.118
.150 DIA.
THRU 2
PLACES
.040
.770
1.000
.188
REF.
180
150
120
90
60
30
0
0
25
50
75
100 125 150 175
T
C
- CASE TEMPERATURE ( C)
P
D
- POWER DISSIPATION (WATTS)
R
q
JC
= 1.0C/W