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Электронный компонент: OM6516SC

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FEATURES
Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available With Free Wheeling Diode
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3 motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25C Unless Specified Otherwise
3.1 - 155
3.1
1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
OM6516SC
OM6520SC
SCHEMATICS
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
OM6516SC
OM6520SC(w/Diode)
Collector
Collector
Emitter
Emitter
1
2
3
C
E
G
Gate
Gate
MECHANICAL OUTLINE
PART
I
C
(Cont.)
V
(BR)CES
V
CE (sat)
(Typ.)
T
f
(Typ.)
q
q
JC
P
D
T
J
NUMBER
@ 90C, A
V
V
ns
C/W
W
C
OM6516SC
25
1000
4.0
300
1.0
125
150
OM6520SC
25
1000
4.0
300
1.0
125
150
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
OM6516SC OM6520SC
3.1
205 Craw
fo
rd St
re
et, Le
o
m
inster, MA 01
4
53 USA (50
8) 534
-57
76 FAX (508) 537-4246
PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
1000
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE
= V
GE
, I
C
= 1 mA
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 125C
Dynamic
g
fs
Forward Transductance
5.5
S
V
CE
= 20 V, I
C
= 15 A
C
ies
Input Capacitance
2000
pF
V
GE
= 0
C
oes
Output Capacitance
160
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC
= 600 V, I
C
= 15 A
t
r
Rise Time
200
nS
V
GE
= 15 V, R
g
= 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j
= 125C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp
= 600 V, I
C
= 15 A
t
f
Fall Time
200
nS
V
GE
= 15 V, R
g
= 3.3
E
off
Turn-Off Losses
1.5
mWs L = 1 mH, T
j
= 125C
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1)
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
1000
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE
= V
GE
, I
C
= 1 mA
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 125C
Dynamic
g
fs
Forward Transductance
5.5
S
V
CE
= 20 V, I
C
= 15 A
C
ies
Input Capacitance
2000
pF
V
GE
= 0
C
oes
Output Capacitance
160
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC
= 600 V, I
C
= 15 A
t
r
Rise Time
200
nS
V
GE
= 15 V, R
g
= 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j
= 125C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp
= 600 V, I
C
= 15 A
t
f
Fall Time
200
nS
V
GE
= 15 V, R
g
= 3.3
E
off
Turn-Off Losses
1.5
mWs L = 1 mH, T
j
= 125C
DIODE CHARACTERISTICS
V
f
Maximum Forward Voltage
1.85
V
I
F
= 30 A, T
C
= 25C
1.70
V
I
F
= 30 A, T
C
= 150C
I
r
Maximum Reverse Current
500
A
V
R
= 1000 V, T
C
= 25C
7.0
mA
V
R
= 800 V, T
C
= 125C
t
rr
Reverse Recovery Time
50
nS
I
F
= 1 A, d
i
/ d
t
= -15 A /S
V
R
= 30 V, T
j
= 25C
Note 1: Limited by diode I
r
characteristic.