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Электронный компонент: OM75N06SC

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3.1
50V, 60V, And 100V Ultra Low R
DS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
FEATURES
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
OM75N06SC
OM75N05SC
OM75N06SA
OM60N10SC
OM75N05SA
OM55N10SC
OM55N10SA
PART NO.
V
DS
(V)
R
DS(on)
( )
I
D
(A)
Package
OM60N10SC
100
.025
60
TO-258AA
OM55N10SC
100
.030
55
TO-258AA
OM55N10SA
100
.035
55
TO-254AA
OM75N06SC
60
.016
75
TO-258AA
OM75N06SA
60
.018
75
TO-254AA
OM75N05SC
50
.016
75
TO-258AA
OM75N05SA
50
.018
75
TO-254AA
SCHEMATIC
4 11 R1
Supersedes 2 07 R0
PIN CONNECTION
Pin 1:
Drain
Pin 2:
Source
Pin 3:
Gate
Pin 1:
Drain
Pin 2:
Source
Pin 3:
Gate
Drain
Source
Gate
1
2
3
1
2
3
TO-254AA
TO-258AA
3.1 - 47
3.1 - 48
OM55N10SA - OM75N06SC
3.1
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
55N10SA
75N06SA
75N05SA
Parameter
60N10SC
55N10SC
75N06SC
75N05SC
Units
V
DS
Drain-Source Voltage
100
100
60
50
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
100
60
50
V
I
D
@ T
C
= 25C
Continuous Drain Current
2
60
55
75
75
A
I
D
@ T
C
= 100C
Continuous Drain Current
2
37
33
45
45
A
I
DM
Pulsed Drain Current
1
180
180
225
225
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
130
125
125
125
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
55
50
50
50
W
Junction-To-Case
Linear Derating Factor
1.00
1.00
1.00
1.00
W/C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
2 Package Limited: SA I
D
= 25A & SC I
D
= 35A @ 25C
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.0
C/W
PACKAGE LIMITATIONS
Parameters
TO254AA
TO-258AA
Unit
I
D
Continuous Drain Current
25
35
A
Linear Derating Factor, Junction-to-Ambient
.020
.025
W/C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
40
C/W
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
TO-258AA
MECHANICAL OUTLINE
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
TO-254AA
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
3.1 - 49
OM55N10SA - OM75N06SC
3.1
OM60N10SC
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
60
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
720
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
100
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
37
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
100
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.025
V
GS
= 10 V, I
D
= 30 A
Resistance
0.05
T
C
= 100C
I
D(on)
On State Drain Current
60
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
C
ies
Input Capacitance
4000
pF
V
DS
= 25 V
C
oes
Output Capacitance
1100
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
250
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
90
nS
V
DD
= 80 V, I
D
= 30 A
t
r
Rise Time
270
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
270
A/S
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
200
nS
V
DD
= 80 V, I
D
= 30 A
t
f
Fall Time
210
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
410
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
60
A
I
SDM
*
Source Drain Current (pulsed)
240
A
V
SD
Forward On Voltage
1.6
V
I
SD
= 60 A, V
GS
= 0
t
rr
Reverse Recovery Time
180
nS
I
SD
= 60 A, di/dt = 100 A/s
V
R
= 80 V
Q
rr
Reverse Recovery Charge
1.8
C
I
RRM
Reverse Recovery Current
10
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.
OM55N10SC
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
55
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
600
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
100
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
37
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
100
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.03
V
GS
= 10 V, I
D
= 30 A
Resistance
0.06
T
C
= 100C
I
D(on)
On State Drain Current
55
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
C
ies
Input Capacitance
4000
pF
V
DS
= 25 V
C
oes
Output Capacitance
1100
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
250
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
90
nS
V
DD
= 80 V, I
D
= 30 A
t
r
Rise Time
270
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
270
A/S
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
200
nS
V
DD
= 80 V, I
D
= 30 A
t
f
Fall Time
210
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
410
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
55
A
I
SDM
*
Source Drain Current (pulsed)
220
A
V
SD
Forward On Voltage
1.5
V
I
SD
= 55 A, V
GS
= 0
t
rr
Reverse Recovery Time
180
nS
I
SD
= 55 A, di/dt = 100 A/s
V
R
= 80 V
Q
rr
Reverse Recovery Charge
1.8
C
I
RRM
Reverse Recovery Current
11
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.
3.1 - 50
OM55N10SA - OM75N06SC
3.1
OM55N10SA
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
55
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
600
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
100
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
37
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
100
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.035
V
GS
= 10 V, I
D
= 30 A
Resistance
0.070
T
C
= 100C
I
D(on)
On State Drain Current
55
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
C
ies
Input Capacitance
4000
pF
V
DS
= 25 V
C
oes
Output Capacitance
1100
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
250
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
90
nS
V
DD
= 80 V, I
D
= 30 A
t
r
Rise Time
270
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
270
A/S
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
200
nS
V
DD
= 80 V, I
D
= 30 A
t
f
Fall Time
210
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
410
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
55
A
I
SDM
*
Source Drain Current (pulsed)
180
A
V
SD
Forward On Voltage
1.5
V
I
SD
= 55 A, V
GS
= 0
t
rr
Reverse Recovery Time
180
nS
I
SD
= 55 A, di/dt = 100 A/s
V
R
= 80 V
Q
rr
Reverse Recovery Charge
1.8
C
I
RRM
Reverse Recovery Current
11
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.
OM75N06SC
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
70
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
900
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
200
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
40
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
60
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.016
V
GS
= 10 V, I
D
= 40 A
Resistance
0.032
T
C
= 100C
I
D(on)
On State Drain Current
75
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
C
ies
Input Capacitance
4100
pF
V
DS
= 25 V
C
oes
Output Capacitance
1800
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
420
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
190
nS
V
DD
= 25 V, I
D
= 40 A
t
r
Rise Time
900
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
150
A/S
V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
130
nC
V
DD
= 25 V, I
D
= 40 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
360
nS
V
DD
= 40 V, I
D
= 75 A
t
f
Fall Time
280
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
600
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
75
A
I
SDM
*
Source Drain Current (pulsed)
300
A
V
SD
Forward On Voltage
1.5
V
I
SD
= 75 A, V
GS
= 0
t
rr
Reverse Recovery Time
120
nS
I
SD
= 75 A, di/dt = 100 A/s
V
R
= 25 V
Q
rr
Reverse Recovery Charge
0.45
C
I
RRM
Reverse Recovery Current
6.5
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.
3.1 - 51
OM55N10SA - OM75N06SC
3.1
OM75N06SA
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
70
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
900
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
200
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
40
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
60
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.018
V
GS
= 10 V, I
D
= 40 A
Resistance
0.036
T
C
= 100C
I
D(on)
On State Drain Current
75
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
C
ies
Input Capacitance
4100
pF
V
DS
= 25 V
C
oes
Output Capacitance
1800
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
420
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
190
nS
V
DD
= 25 V, I
D
= 40 A
t
r
Rise Time
900
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
150
A/S
V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
130
nC
V
DD
= 25 V, I
D
= 40 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
360
nS
V
DD
= 40 V, I
D
= 75 A
t
f
Fall Time
280
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
600
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
75
A
I
SDM
*
Source Drain Current (pulsed)
300
A
V
SD
Forward On Voltage
1.5
V
I
SD
= 75 A, V
GS
= 0
t
rr
Reverse Recovery Time
120
nS
I
SD
= 75 A, di/dt = 100 A/s
V
R
= 25 V
Q
rr
Reverse Recovery Charge
0.45
C
I
RRM
Reverse Recovery Current
6.5
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.
OM75N05SC
(T
C
= 25C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
70
A
(repetitive or
non-repetitive,T
J
= 25C)
E
AS
Single Pulse Avalanche Energy
900
mJ
(starting T
J
= 25C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
200
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
40
A
(repetitive or
non-repetitive, T
J
= 100C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
50
V
I
D
= 250 A, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
A
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
A
V
DS
= Max. Rat. x 0.8, T
C
= 125C
I
GSS
Gate-Body Leakage
100
nA
V
GS
= 20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 A
R
DS(on)
Static Drain-Source On
0.016
V
GS
= 10 V, I
D
= 40 A
Resistance
0.032
T
C
= 100C
I
D(on)
On State Drain Current
75
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
25
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
C
ies
Input Capacitance
4100
pF
V
DS
= 25 V
C
oes
Output Capacitance
1800
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
420
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
190
nS
V
DD
= 20 V, I
D
= 40 A
t
r
Rise Time
900
nS
R
G
= 50 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
150
A/S
V
DD
= 20 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
130
nC
V
DD
= 20 V, I
D
= 40 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
360
nS
V
DD
= 35 V, I
D
= 75 A
t
f
Fall Time
280
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
600
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
75
A
I
SDM
*
Source Drain Current (pulsed)
300
A
V
SD
Forward On Voltage
1.5
V
I
SD
= 75 A, V
GS
= 0
t
rr
Reverse Recovery Time
120
nS
I
SD
= 75 A, di/dt = 100 A/s
V
R
= 20 V
Q
rr
Reverse Recovery Charge
0.45
C
I
RRM
Reverse Recovery Current
6.5
A
*Pulsed: Pulse Duration 300S, Duty Cycle 1.5%.