2.1 - 29
2.1
OMH310
OMH315
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
4 11 R0
DUAL, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
H-Bridge Configuration
Zener Gate Protection
10 m Shunt Resistor
2 Linear Thermal Sensors, One For Each Bridge
Isolated Package
Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
DD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(T
C
= @ 25C)
Part
V
DS
R
DS(on)
I
D
Package
Number
(Volts)
(m )
(Amps)
OMH310
50
100
15
MP-3
OMH315
50
70
20
MP-3
ABSOLUTE MAXIMUM RATINGS
(T
C
= @ 25C unless otherwise noted)
Parameter
OMH310
OMH315
Units
Drain Source Voltage, V
DS
50
50
V
Drain-Gate (R
GS
= 1m ), V
DGR
50
50
V
Continuous Drain Current, I
D
@ T
C
= 25C
15
25
A
Continuous Drain Current,
I
D
@ T
C
= 70C
11
16
A
Pulse Drain Current, I
DM
(1)
56
100
A
Maximum Power Dissipation, P
D
@ T
C
= 25C
(2)
20
50
W
Maximum Power Dissipation,
P
D
@ T
C
= 70C
(2)
1 1
18 W
Linear Derating Factor, Junction-To-Case
0 . 2
0.33
W/C
Thermal Resistance, Junction-To-Case
5.0
3.0
C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125C.
2.1 - 30
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH310
(T
C
= 25 unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 A, V
GS
= 0
V
(BR)DSS
50
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
25.0
A
V
DS
= Max. Rat. x 0.8, T
C
= 70C
-
-
500.0
A
Gate-Body Leakage, V
GS
= 12 V
I
GSS
-
-
500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 A
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
R
DS(on)
-
-
0.1
Static Drain-Source On-Resistance
T
C
= 70C
-
-
0.2
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10 V
I
D(on)
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance, V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0A
g
fs
3.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
-
650
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
450
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
280
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
30
ns
Rise Time
V
DD
= 30 V, I
D
=
3 A,
t
r
-
-
85
ns
Turn-Off Delay Time
R
GS
= 50 , V
GS
= 10 V
t
d(off)
-
-
90
ns
Fall Time
t
f
-
-
110
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
14
A
Source - Drain Current Pulsed
I
SDM
*
-
-
56
A
Forward On-Voltage, I
SD
= 28 A, V
GS
= 0
V
SD
-
-
1.8
V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/Sec
t
rr
-
120
-
ns
Reverse Recovered Charge
Q
rr
-
0.15
-
C
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40C to +70C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
2.1 - 31
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH315A
(T
C
= 25 unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 A, V
GS
= 0
V
(BR)DSS
50
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
250
A
V
DS
= Max. Rat. x 0.8, T
C
= 70C
-
-
750
A
Gate-Body Leakage, V
GS
= 12 V
I
GSS
-
-
500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 A
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
R
DS(on)
-
-
0.07
Static Drain-Source On-Resistance
T
C
= 70C
-
-
0.14
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10 V
I
D(on)
20
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance, V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
g
fs
5.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
1020
-
pF
Output Capacitance
V
GS
= 0,
C
oss
-
500
-
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
120
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
50
ns
Rise Time
V
DD
= 30 V, I
D
=
10 A,
t
r
-
-
75
ns
Turn-Off Delay Time
R
GS
= 4.7 , V
GS
= 10 V,
t
d(off)
-
-
50
ns
Fall Time
R
L
= 2.4
t
f
-
-
50
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
25
A
Source - Drain Current (Pulsed)
I
SDM
*
-
-
100
A
Forward On-Voltage, I
SD
= 28 A, V
GS
= 0
V
SD
-
-
2.4
V
Reverse Recovery Time
t
rr
-
100
-
ns
Reverse Recovered Charge
I
SD
= 13 A,di/dt = 100 A/Sec
Q
rr
-
0.15
-
C
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40C to +70C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
SCHEMATIC
MECHANICAL OUTLINE
OMH310 OMH315
2.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Q1
R1
Z1
Q3
R3
Z3
Q5
R5
Z5
Q2
R2
Z2
Q4
R4
Z4
Q6
R6
Z6
Q7
R7
Z7
Q8
R8
Z8
PTC 1
PTC 2
RS
RS
7
6
5
8
11 12
13
9
16 10
21
22
14
15
20
19
17
3
4
32 26
31 30 29
28
24 25
27
1
2
34
33
23 18
.360
.180
.020
.360 MAX.
2.000
1.350
.150
(4) PLCS.
4.000
3.000
.150
.500
.500
.250
.250
.600
.325
.050
(34) PLCS.
.300
2.450
.135
Pin 1: Gate Q2
Pin 2: Source Q2
Pin 3: PTC 1
Pin 4: PTC 1
Pin 5: Gate Q4
Pin 6: Source Q4
Pin 7: Sense R 1
Pin 8: Sense R 1
Pin 9: Gate Q6
Pin 10: Source Q6
Pin 11: Return Sense
Pin 12: Return
Pin 13: Return
Pin 14: Gate Q8
Pin 15: Source Q8
Pin 16: Sense R 2
Pin 17: Sense R 2
Pin 34: Gate Q1
Pin 33: Source Q1
Pin 32: Output Q1, Q2
Pin 31: Gate Q3
Pin 30: Source Q3
Pin 29: V
M
Pin 28: V
M
Pin 27: V
M
Pin 26: Output Q3, Q4
Pin 25: Gate Q5
Pin 24: Source Q5
Pin 23: Output Q5, Q6
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Gate Q7
Pin 19: Source Q7
Pin 18: Output Q7, Q8
1
Contact factory for lead bending options.
Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100m maximum).
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