27
GaAlAs Infrared Emitter
OPE5194WK
The OPE5194WK is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm)
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4
plastic package
and has narrow beam angle with lensed package
and cup frame.
FEATURES
High-output power
Narrow beam angle
Available for pulse operating
APPLICATIONS
Optical emitters
Optical switches
Smoke sensors
IR remote control
IR sound transmission
STORAGE
Condition : 5C~35C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25
C )
Item
Symbol
Rating
Unit
Power Dissipation
P
D
150
mW
Forward current
I
F
100
mA
Pulse forward current
*
1
I
FP
1.0 A
Reverse voltage
V
R
5.0
V
Operating temp.
Topr.
-25~ +85
C
Soldering temp.
*
2
Tsol. 260.
C
*
1
.Duty ratio = 1/100, pulse width=0.1ms.
*
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS (Ta=25
C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
=100mA
1.4
1.7 V
Reverse current
I
R
V
R
= 5V
10
A
Capacitance
Ct
f = 1MHz
20
pF
Radiant intensity
Ie
I
F
=100mA 100
mW/
Peak emission wavelength
p
I
F
= 50mA
940
nm
Spectral bandwidth 50%
I
F
= 50mA
45
nm
Half angle
I
F
=100mA
10 deg.
2-0.5
24.
0 M
i
n
2.5
2
.0
Anode
Cathode
8.
7
7.
7
1.
3 M
a
x
5.
7
5.
0
Tolerance :
0.2mm
28
GaAlAs Infrared Emitter
OPE5194WK
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
50
30
20
10
5
4
3
2
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage V
F
(V)
Ta=25
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
800 850 900 950 1000 1050
Emission Wavelength (nm)
Ta=25
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta()
I
F
=50mA
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
20
30
40
50
60
70
80
-20
-30
-40
-50
-60
-70
-80
-90
-10
10
0
1.0 0.5 0 0.5 1.0
90
Relative Radiant intensity
Ta=25
RADIANT INTENSITY Vs.
FORWARD CURRENT.
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta()
Ta=25
400
200
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3 5 10 30 50 100 200 500
Forward Current IF(mA)
Ta=25
PDF 
ZIP