13
High Speed GaAlAs Infrared Emitter
C
C
C
C
OPE5587
C
The OPE5587 is GaAlAs infrared emitting diode DIMENSIONS
(Unit : mm)
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
Ultra high-speed : 25ns rise time
880nm wavelength
Narrow beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
STORAGE
Condition : 5C~35C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
C C
C
CCCCCCCCCCCCCCCCC(Ta=25C )
Item
Symbol
Rating
Unit
Power Dissipation
P
D
C
150
C
Forward current
I
F
C
100
EC
Pulse forward current
CCCCC 1C
I
FP
C
1.0 A
C
Reverse voltage
V
R
C
4.0
C
Operating temp.
Topr.
-25~ +85
CC
Soldering temp.
CCCCCCCCCCCCCC 2
Tsol. 260.
CC
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS (Ta=25
C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
V
F
C
I
F
=50
EC
1.5
2.0
V
Reverse current
I
R
C
V
R
=4V
C
C
C
10
EC
Capacitance
Ct
f=1
C
C
20
C
Radiant intensity
Ie
I
F
=50
EC
40 90
C
/
Peak emission wavelength
p
C
I
F
=50
EC
C
880
C
C
Spectral bandwidth 50%
C
I
F
=50
C
C
45
C
C
Half angle
I
F
=50
C
C
10
C
deg.
Optical rise & fall time(10%~90%)
tr/tf
I
F
=50
C
C
25/15
C
ns
Cut off frequency
*3
fc I
F
D ECEEC
DD EC
C
C
14
C
MHz
*3
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
C
2- 0.5
24.
0 M
i
n
Anode
Cathode
8.
7
7.
7
1.
3 M
a
x
2.5
2
.0
Min
5.
7
5.
0
Tolerance :
0.2mm
14
C
C
C
C
C
C
CC
C
High Speed GaAlAs Infrared Emitter
OPE5587
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
700 750 800 850 900 950
Emission Wavelength
(nm)
Ta=25
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta(
)
I
F
=50mA
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
20
30
40
50
60
70
80
-20
-30
-40
-50
-60
-70
-80
-90
-10
10
0
1.0 0.5 0 0.5 1.0
90
Relative Radiant intensity
Ta=25
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta(
)
RADIANT INTENSITY Vs.
FORWARD CURRENT.
Ta=25
200
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3 5 10 30 50 100 200 500
Forward Current IF(mA)
Ta=25
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
50
30
20
10
5
4
3
2
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage V
F
(V)
Ta=25
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