7
High Speed GaAlAs Infrared Emitter
OPE5685
The OPE5685 is GaAlAs infrared emitting diode DIMENSIONS
(Unit : mm)
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
High speed : 25ns rise time
850nm wavelength
Wide beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
STORAGE
Condition : 5C~35C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
(Ta=25
C)
Item
Symbol
Rating
Unit
Power Dissipation
P
D
150 MW
Forward current
I
F
100 MA
Pulse forward current
*1
I
FP
1.0 A
Reverse voltage
V
R
4.0 V
Operating temp.
Topr.
-25~ +85
C
Soldering temp.
*2
Tsol. 260.
C
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
=50mA
1.5
2.0
V
Reverse current
I
R
V
R
=4V 10
A
Capacitance
Ct
f=1MHz 20
pF
Radiant intensity
Ie
I
F
=50mA 50
mW/sr
Peak emission wavelength
p I
F
=50mA 850 nm
Spectral bandwidth 50%
I
F
=50mA 45 nm
Half angle
I
F
=50mA
22 deg.
Optical rise & fall time(10%~90%)
tr/tf
I
F
=50mA
25/13
ns
Cut off frequency
*3
fc I
F
=50mA DC
+10mA p-p
14
MHz
*3
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
2- 0.5
24.
0 M
i
n
2.5
2
.0
Anode
Cathode
8.
7
7.
7
1.
3 M
a
x
5.
7
5.
0
Tolerance :
0.2mm
8
High Speed GaAlAs Infrared Emitter
OPE5685
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
50
30
20
10
5
4
3
2
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage V
F
(V)
Ta=25
C
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
700 750 800 850 900 950
Emission Wavelength
(nm)
Ta=25
C
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta(
C
)
I
F
=50mA
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
20
30
40
50
60
70
80
-20
-30
-40
-50
-60
-70
-80
-90
-10
10
0
1.0 0.5 0 0.5 1.0
90
Relative Radiant intensity
Ta=25
C
RADIANT INTENSITY Vs.
FORWARD CURRENT.
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta(
C)
Ta=25
200
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3 5 10 30 50 100 200 500
Forward Current IF(mA)
Ta=25
C
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