1
OCT-14-2002
Dual N-Channel Enhancement Mode
Field Effect Transistor
P07D03LV
SOP-8
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
7
Continuous Drain Current
T
C
= 70 C
I
D
6
Pulsed Drain Current
1
I
DM
40
A
T
C
= 25 C
2
Power Dissipation
T
C
= 70 C
P
D
1.3
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
" from case for 10 sec.)
T
L
275
C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
JA
62.5
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.7 1 1.4
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
100 nA
V
DS
= 24V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 55 C
10
A
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
25
A
G : GATE
D : DRAIN
S : SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
30
20m
7A
2
OCT-14-2002
Dual N-Channel Enhancement Mode
Field Effect Transistor
P07D03LV
SOP-8
NIKO-SEM
V
GS
= 2.5V, I
D
= 5A
40
48
Drain-Source On-State
Resistance
1
R
DS(ON)
V
GS
= 4.5V, I
D
= 6A
23
30
m
V
GS
= 10V, I
D
= 7A
18
25
Forward Transconductance
1
g
fs
V
DS
= 15V, I
D
= 5A
16
S
DYNAMIC
Input Capacitance
C
iss
830
Output Capacitance
C
oss
185
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
80
pF
Total Gate Charge
2
Q
g
9
13
Gate-Source Charge
2
Q
gs
2.8
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 5V,
I
D
= 7A
3.1
nC
Turn-On Delay Time
2
t
d(on)
5.7
Rise Time
2
t
r
V
DS
= 15V
10
Turn-Off Delay Time
2
t
d(off)
I
D
1A, V
GS
= 10V, R
GEN
= 6
18
Fall Time
2
t
f
5
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
3
Pulsed Current
3
I
SM
6
A
Forward Voltage
1
V
SD
I
F
= 1A, V
GS
= 0V
1
V
Reverse Recovery Time
t
rr
I
F
= 5A, dl
F
/dt = 100A /
S
15.5 nS
Reverse Recovery Charge
Q
rr
7.9
nC
1
Pulse test : Pulse Width
300 sec, Duty Cycle 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH "P07D03LV", DATE CODE or LOT #
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