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Электронный компонент: P2503BDG

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1
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
12
Continuous Drain Current
T
C
= 70 C
I
D
10
Pulsed Drain Current
1
I
DM
30
A
T
C
= 25 C
32
Power Dissipation
T
C
= 70 C
P
D
22
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
C


THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
J
c
3
C / W
Junction-to-Ambient R
JA
75
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1%





ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER SYMBOL
TEST
CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1 1.5 2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
250 nA
V
DS
= 24V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 55 C
10
A
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
30
25m
12A
G
D
S
1.GATE
2.DRAIN
3.SOURCE

2
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
30
A
V
GS
= 4.5V, I
D
= 6A
25
37
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 12A
18
25
m
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 12A
19
S
DYNAMIC
Input Capacitance
C
iss
790
Output Capacitance
C
oss
175
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 10V, f = 1MHz
65
pF
Total Gate Charge
2
Q
g
16
Gate-Source Charge
2
Q
gs
2.5
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 12A
2.1
nC
Turn-On Delay Time
2
t
d(on)
2.2
4.4
Rise Time
2
t
r
7.5
15
Turn-Off Delay Time
2
t
d(off)
11.8 21.3
Fall Time
2
t
f
V
DD
= 10V
I
D
1A, V
GS
= 10V, R
GEN
= 6
3.7
7.4
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
1.3
Pulsed Current
3
I
SM
2.6
A
Forward Voltage
1
V
SD
I
F
= 1A, V
GS
= 0V
1
V
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH "P2503BDG", DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.










3
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
TYPICAL PERFORMANCE CHARACTERISTICS
Body Diode Forward Voltage Variation with Source Current and Temperature
25 C
T = 125 C
V - Body Diode Forward Voltage(V)
Is - R
e
ver
s
e D
r
ai
n
Cur
r
e
n
t(
A)
0.001
0
0.01
0.1
0.4
SD
0.2
0.6
V = 0V
1
10
100
A
GS
1.0
0.8
1.2
-55 C
1.4

4
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM




5
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2503BDG
TO-252
Lead-Free
NIKO-SEM
TO-252 (DPAK) MECHANICAL DATA
mm
mm
Dimension
Min. Typ. Max.
Dimension
Min. Typ. Max.
A 9.35 10.4 H 0.89 2.03
B 2.2 2.4 I 6.35 6.80
C
0.45 0.6 J 5.2 5.5
D 0.89 1.5 K 0.6 1
E 0.45 0.69 L 0.5 0.9
F 0.03 0.23 M 3.96 4.57 5.18
G 5.2 6.2 N
G
A
H
J
I
B
C
M
L
K
D
E
F
13
2