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Электронный компонент: P2503NVG

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1
May-12-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
NIKO-SEM









ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
N-Channel P-Channel UNITS
Drain-Source Voltage
V
DS
30
-30
V
Gate-Source Voltage
V
GS
20
20
V
T
C
= 25 C
7
-5
Continuous Drain Current
T
C
= 70 C
I
D
6 -4
Pulsed Drain Current
1
I
DM
20
-20
A
T
C
= 25 C
2
Power Dissipation
T
C
= 70 C
P
D
1.3
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
C


THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
JA
62.5
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1%





ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER SYMBOL
TEST
CONDITIONS
MIN TYP MAX
STATIC
V
GS
= 0V, I
D
= 250
A
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250
A
N-Ch
P-Ch
30
-30
V
DS
= V
GS
, I
D
= 250
A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
A
N-Ch
P-Ch
1
-1
1.5
-1.5
2.5
-2.5
V
G : GATE
D : DRAIN
S : SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
N-Channel 30
25m
7A
P-Channel -30
45m
-5A

2
May-12-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
NIKO-SEM
V
DS
= 0V, V
GS
= 20V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
N-Ch
P-Ch
100
100
nA
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
DS
= 20V, V
GS
= 0V, T
J
= 55 C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V, T
J
= 55 C
N-Ch
P-Ch
10
-10
A
V
DS
= 5V, V
GS
= 10V
On-State Drain Current
1
I
D(ON)
V
DS
=-5V, V
GS
= -10V
N-Ch
P-Ch
20
-20
A
V
GS
= 4.5V, I
D
= 6A
V
GS
= -4.5V, I
D
= -4A
N-Ch
P-Ch
25
58
37
80
V
GS
= 10V, I
D
= 7A
Drain-Source On-State
Resistance
1
R
DS(ON)
V
GS
= -10V, I
D
= -5A
N-Ch
P-Ch
18
34
25
45
m
V
DS
= 5V, I
D
= 7A
Forward Transconductance
1
g
fs
V
DS
= -5V, I
D
= -5A
N-Ch
P-Ch
19
11
S
DYNAMIC
Input Capacitance
C
iss
N-Ch
P-Ch
790
690
Output Capacitance
C
oss
N-Ch
P-Ch
175
310
Reverse Transfer Capacitance
C
rss
N-Channel
V
GS
= 0V, V
DS
= 10V, f = 1MHz
P-Channel
V
GS
= 0V, V
DS
= -10V, f = 1MHz N-Ch
P-Ch
65
75
pF
Total Gate Charge
2
Q
g
N-Ch
P-Ch
16
14
Gate-Source Charge
2
Q
gs
N-Ch
P-Ch
2.5
2.2
Gate-Drain Charge
2
Q
gd
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 7A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -5A
N-Ch
P-Ch
2.1
1.9
nC

3
May-12-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
NIKO-SEM
Turn-On Delay Time
2
t
d(on)
N-Ch
P-Ch
2.2
6.7
4.4
13.4
Rise Time
2
t
r
N-Ch
P-Ch
7.5
9.7
15
19.4
Turn-Off Delay Time
2
t
d(off)
N-Ch
P-Ch
11.8
19.8
21.3
35.6
Fall Time
2
t
f
N-Channel
V
DD
= 10V
I
D
1A, V
GS
= 10V, R
GEN
= 6
P-Channel
V
DD
= -10V
I
D
-1A, V
GS
= -10V, R
GEN
= 6
N-Ch
P-Ch
3.7
12.3
7.4
22.2
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
N-Ch
P-Ch
1.3
-1.3
Pulsed Current
3
I
SM
N-Ch
P-Ch
2.6
-2.6
A
I
F
= 1A, V
GS
= 0V
Forward Voltage
1
V
SD
I
F
= -1A, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
1
Pulse test : Pulse Width
300 sec, Duty Cycle 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH "P2503NVG", DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.















4
May-12-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
NIKO-SEM
N-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
25 C
T = 125 C
V - Body Diode Forward Voltage(V)
I
s
- R
e
ve
rs
e D
r
a
i
n C
u
rre
n
t
(A
)
0.001
0
0.01
0.1
0.4
SD
0.2
0.6
V = 0V
1
10
100
A
GS
1.0
0.8
1.2
-55 C
1.4

5
May-12-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
NIKO-SEM