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Электронный компонент: P2504BDG

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1
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
12
Continuous Drain Current
T
C
= 100 C
I
D
10
Pulsed Drain Current
1
I
DM
45
A
T
C
= 25 C
41
Power Dissipation
T
C
= 100 C
P
D
32
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
" from case for 10 sec.)
T
L
275
C

THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
J
c
3
C / W
Junction-to-Ambient
R
JA
75
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1

ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
40
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1
2.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
250
nA
V
DS
= 32V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V, T
C
= 125 C
10
A
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
45
A
V
GS
= 4.5V, I
D
= 10A
35
45
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 12A
21
25
m
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
40V
25m
12A
G
D
S

2
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 12A
18
S
DYNAMIC
Input Capacitance
C
iss
760
Output Capacitance
C
oss
165
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 10V, f = 1MHz
55
pF
Total Gate Charge
2
Q
g
16
Gate-Source Charge
2
Q
gs
2.5
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 12A
2.1
nC
Turn-On Delay Time
2
t
d(on)
2.1
4.2
Rise Time
2
t
r
V
DS
= 20V, R
L
= 1
7.2
14
Turn-Off Delay Time
2
t
d(off)
I
D
1A, V
GS
= 10V, R
GEN
= 6
11.6 21.0
Fall Time
2
t
f
3.5
7.2
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
12
Pulsed Current
3
I
SM
40
A
Forward Voltage
1
V
SD
I
S
= I
S
, V
GS
= 0V
1.2
V
Reverse Recovery Time
t
rr
I
F
=
5
A, dl
F
/dt = 100A /
S
14.5
nS
Reverse Recovery Charge
Q
rr
7.2
nC
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH "P2504BDG", DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.


3
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
Body Diode Forward Voltage Variation with Source Current and Temperature
25C
T = 125C
V - Body Diode Forward Voltage(V)
Is - Reverse Drain Current(A)
0.001
0
0.01
0.1
0.4
SD
0.2
0.6
V = 0V
1
10
100
A
GS
1.0
0.8
1.2
-55C
1.4

4
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM

5
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
TO-252 (DPAK) MECHANICAL DATA
mm
mm
Dimension
Min.
Typ.
Max.
Dimension
Min.
Typ.
Max.
A
9.35
10.1
H
0.8
B
2.2
2.4
I
6.4
6.6
C
0.48
0.6
J
5.2
5.4
D
0.89
1.5
K
0.6
1
E
0.45
0.6
L
0.64
0.9
F
0.03
0.23
M
4.4
4.6
G
6
6.2
N
G
A
H
J
I
B
C
XXXXXXXXX
M
L
K
D
E
F
NIKOS