ChipFind - документация

Электронный компонент: P3056LS

Скачать:  PDF   ZIP


1
AUG-09-2001
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3056LS
TO-263
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
V
GS
12
V
T
C
= 25 C
12
Continuous Drain Current
T
C
= 100 C
I
D
8
Pulsed Drain Current
1
I
DM
45
A
Avalanche Energy
L = 0.1mH
E
AS
60
Repetitive Avalanche Energy
2
L = 0.05mH
E
AR
3
mJ
T
C
= 25 C
43
Power Dissipation
T
C
= 100 C
P
D
15
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
" from case for 10 sec.)
T
L
275
C

THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
JC
2.6
Junction-to-Ambient
R
JA
60
Case-to-Heatsink
R
CS
0.6
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1
%

ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
25
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.5 0.7 1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 12V
250 nA
V
DS
= 20V, V
GS
= 0V
25
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 125 C
250
A
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
25
50m
12A
G
D
S


2
AUG-09-2001
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3056LS
TO-263
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
12
A
V
GS
= 5V, I
D
= 12A
70
120
Drain-Source On-State
Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 12A
50
90
m
Forward Transconductance
1
g
fs
V
DS
= 15V, I
D
= 12A
16
S
DYNAMIC
Input Capacitance
C
iss
450
Output Capacitance
C
oss
200
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
60
pF
Total Gate Charge
2
Q
g
15
Gate-Source Charge
2
Q
gs
2.0
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 6A
7.0
nC
Turn-On Delay Time
2
t
d(on)
6.0
Rise Time
2
t
r
V
DS
= 15V, R
L
= 1
6.0
Turn-Off Delay Time
2
t
d(off)
I
D
12A, V
GS
= 10V, R
GS
= 2.5
20
Fall Time
2
t
f
5.0
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
12
Pulsed Current
3
I
SM
20
A
Forward Voltage
1
V
SD
I
F
= I
S
, V
GS
= 0V
1.5
V
Reverse Recovery Time
t
rr
30
nS
Peak Reverse Recovery Current
I
RM(REC)
I
F
= I
S
, dl
F
/dt = 100A /
S
15 A
Reverse Recovery Charge
Q
rr
0.043
C
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH "P3056LS", DATE CODE or LOT #


3
AUG-09-2001
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3056LS
TO-263
NIKO-SEM
TO-263 (D
2
PAK) MECHANICAL DATA
mm
mm
Dimension
Min. Typ. Max.
Dimension
Min. Typ. Max.
A 14.5 15 15.8 H 1.0 1.5 1.8
B 4.2 4.7 I 9.8 10.3
C
1.20 1.35 J 6.5
D 2.8 K 1.5
E 0.3 0.4 0.5 L 0.7 1.4
F -0.102 0.203 M 4.83 5.08 5.33
G 8.5 9 9.5 N