GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
S175 - 50
175 Watts, 50 Volts, Class AB
Milcom 1.5 - 30
MHz
GENERAL DESCRIPTION
The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,
AB or C operation in the HF/VHF frequency bands. Its high collector voltage
simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
built using Gold Topside Metal, diffused emitter ballast resistors and silicon
nitride passivation, providing the user with the Highest MTTF available.
CASE OUTLINE
55HX, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 270 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 110 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 20 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature +200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 30 MHz
Vcc = 50 Volts
At Rated Power Out
175
17
17.5
65
3.5
30:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
Zin
ZI
Cob
h
FE
IMD
Emitter to Base Breakdown
Collector to Emitter
Breakdown
Collector to Emitter
Breakdown
Series Input Impedance
Series Load Impedance
Output Capacitance
DC - Current Gain
Intermodulation Distortion Lev.
Ie = 10 mA
Ic = 100 mA
Ie = 100 mA
At Rated Pout & Freq.
At Rated Pout & Freq.
Vcb = 50 V, Ie = 0
Vce = 5 V, Ic = 2 A
At Rated Pout
4
110
53
10
0.6-j0.4
4.6+2.1
180
-35
Volts
Volts
Volts
OHMS
OHMS
dBc
Initial Issue June, 1994
S175-50
Q1,Q2=Ghz S175-50
BYISTOR=GHz BYl-1
C1,C3,C5,C6,C7,C8=0.1mF ceramic
C2=25-240pF Compression Mica
C4=75-480pF Compression Mica
C9=10mF, 50V, Electrolytic
C10=2700pF DM15
L1=6 turns on Indiana General F627-9, H Material
L2,L3=2.2mH, Molded Inductor
R1,R2=22W, 2 Watts
R3,R6=220W, 2 Watts
R4,R5=10W, 1/4 Watt
2-30 MHz, 300 Watts
Linear Amplifier
TRANSFORMER DETAILS
T1: 8 beads of Indiana General F625-9, H
material on two brass tubes. The primary is
four turns of #20 vinyl clad wire wound
through the brass tubes
T2: #20 twisted pair, approximately 2 crests
per centimeter, wound on Indiana General
F624-19, H material
T3: 10 beads of Indiana General F627-8,
H materail mounted on two brass tubes. The
secondary consist of 3 #20 vinyl clad wires
in parallel. The three wires should be wound
to produce a 2:1 turns ratio
RF IN
C2
T1
C4
R3
R4
R5
R6
L3
C6
Q2
Q1
L2
C5
C7
T2
L1
BYI-1
R1
R2
C3
C1
+
-
Vbb
T3
C10
C8
C9
+50V
RF OUT
August 1996
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