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Электронный компонент: T10XB40

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Maximum Ratings & Characteristics
Single Phase, 60 Hz, Resistive or Inductive Load
T
a
= 25C Unless Otherwise Specified
CHARACTERISTIC SYMBOL
T10XB40
T10XB60
T10XB80
UNIT
Peak Repetitive Reverse Voltage
V
RRM
400 600 800 V
RMS Reverse Voltage
V
R(RMS)
280 420 560 V
Average Rectified Output Current @ T
C
= 108C w/ cooling fin
I
o
10.0
A
Average Rectified Output Current @ T
a
= 25C w/o cooling fin
I
o
2.7
A
Non-Repetitive Peak Forward Surge Current
10 mS single half sine-wave superimposed on rated load
I
FSM
120
A
Maximum Forward Voltage per Element, I
F
= 5.0 A
V
F
1.05
V
Peak Reverse Current per element at V
R
= V
RRM
I
R
10
A
Operating and Storage Temperature Range
T
J
,T
stg
-40 to +150
C
Reference Table for Heat-Sink Size
Average Rectified Output Current in Amps
3.0
5.0
7.5
9
11
Cooling Fin Single-face Area S1 (cm
2
) 4
75
180
500
900
Cooling Fin Single-face Area S2 (cm
2
) 8
65
100
310
490
Note: Vertical Mounting at T
a
= 40C. HS Material: S1 = 1.5mm-Thick Aluminum, S2 = 3.0mm-Thick Copper
Manufactured by Tianjin Zhong Huan Semiconductor Co., Ltd.
Rev 0, Sep 2002
T10XB Series (SIP)
10-AMPERE SILICON BRIDGE RECTIFIER
FEATURES
Low Reverse Leakage Current
Surge Overload Rating to 120A Peak
Ideal for Printed Circuit Board Applications
Epoxy Material UL Recognition
Flammability Classification 94V-0
Mechanical Data
Case:
Molded Epoxy Resin
Terminals: Plated Leads, Solderable
per MIL-STD-202, Method 208
Polarity: Molded on Body
UNIT: mm
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T10XB Series (SIP)





In order to avoid damaging devices, please observe the following precautions:
1. When using automated soldering equipment, use 60/40 (Sn/Pb) solder (melting point of 180C) with a neutral flux
similar to rosin. Preheat time should be limited to 1 2 minutes at 150C.
2. When using a soldering iron, use a tip temperature of less than 300C (or a soldering iron power of less than
60W). Keep the soldering time below 5 seconds.
3. After soldering, remove any flux residue to avoid corrosion.
4. Because over-voltage or over-current testing may cause permanent damage to the devices, be sure to check the
test equipment for proper voltage, current and ground connection prior to beginning the test.
5. If the devices are to be encapsulated, they should be cleaned and dried at 120 5C for at least 24 hours prior to
encapsulation. Test for compatibility between the device package and the encapsulation material.

Forward Voltage
0
2
4
6
8
10
12
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
(V)
I
F
(A
)
TJ=150C
TJ=25C
P - Io Curve
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
Io (A)
P (
W
)
Current Derating
Without HS: Tc at PCB Pad (5 mm)
With HS: Tc Next to HS Mounting
0
2
4
6
8
10
0
25
50
75
100
125
150
175
Tc (C)
Io
(
A
)
W/O HS
W/ HS
Surge Forward Current
50
60
70
80
90
100
110
120
130
1
10
100
Cycles
I
FS
M
(A
)