Maximum Ratings & Characteristics
Single Phase, 60 Hz, Resistive or Inductive Load
T
a
= 25C Unless Otherwise Specified
CHARACTERISTIC SYMBOL
T2SBA40
T2SBA60
T2SBA80
UNIT
Peak Repetitive Reverse Voltage
V
RRM
400 600 800 V
RMS Reverse Voltage
V
R(RMS)
280 420 560 V
Average Rectified Output Current @ T
a
= 25C
I
o
1.5
A
Non-Repetitive Peak Forward Surge Current
10 mS single half sine-wave superimposed on rated load
I
FSM
60
A
Maximum Forward Voltage per Element, I
F
= 0.75 A
V
F
1.05
V
Peak Reverse Current per element at V
R
= V
RRM
I
R
10
A
Operating and Storage Temperature Range
T
J
,T
stg
-40 to +150
C
Manufactured by Tianjin Zhong Huan Semiconductor Co., Ltd.
Rev 0, Sep 2002
T2SBA Series (SIP)
1.5-AMPERE SILICON BRIDGE RECTIFIER
FEATURES
Low Reverse Leakage Current
Surge Overload Rating to 60A Peak
Ideal for Printed Circuit Board Applications
Epoxy Material UL Recognition
Flammability Classification 94V-0
Mechanical Data
Case:
Molded Epoxy Resin
Terminals: Plated Leads, Solderable
per MIL-STD-202, Method 208
Polarity: Molded on Body
UNIT: mm
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T2SBA Series (SIP)
In order to avoid damaging devices, please observe the following precautions:
1. When using automated soldering equipment, use 60/40 (Sn/Pb) solder (melting point of 180C) with a neutral flux
similar to rosin. Preheat time should be limited to 1 2 minutes at 150C.
2. When using a soldering iron, use a tip temperature of less than 300C (or a soldering iron power of less than
60W). Keep the soldering time below 5 seconds.
3. After soldering, remove any flux residue to avoid corrosion.
4. Because over-voltage or over-current testing may cause permanent damage to the devices, be sure to check the
test equipment for proper voltage, current and ground connection prior to beginning the test.
5. If the devices are to be encapsulated, they should be cleaned and dried at 120 5C for at least 24 hours prior to
encapsulation. Test for compatibility between the device package and the encapsulation material.
Forward Voltage
0
1
2
3
4
5
6
7
8
9
10
0.4
0.6
0.8
1
1.2
V
F
(V)
I
F
(A
)
TJ=150C
TJ=25C
P - Io Curve
0
0.5
1
1.5
2
2.5
3
3.5
0 0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
Io (A)
P (
W
)
Current Derating
Tc at PCB Pad (3 mm)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Tc (C)
Io
(
A
)
Surge Forward Current
10
20
30
40
50
60
1
10
100
Cycles
I
FS
M
(A
)
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