ChipFind - документация

Электронный компонент: BAT54RSLT1

Скачать:  PDF   ZIP
G121/1
DEVICE MARKING
BAT54S = LD3
MAXIMUM RATINGS
(T
J
= 125C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Volts
Forward Power Dissipation
P
F
@ T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Operating Junction
T
J
Temperature Range
55 to +125
C
Storage Temperature Range
T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (I
R
= 10
A)
V
(BR)R
30
--
--
Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
C
T
--
7.6
10
pF
Reverse Leakage (V
R
= 25 V)
I
R
--
0.5
2.0
Adc
Forward Voltage (I
F
= 0.1 mAdc)
V
F
--
0.22
0.24
Vdc
Forward Voltage (I
F
= 30 mAdc)
V
F
--
0.41
0.5
Vdc
Forward Voltage (I
F
= 100 mAdc)
V
F
--
0.52
1.0
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
t
rr
--
--
5.0
ns
Forward Voltage (I
F
= 1.0 mAdc)
V
F
--
0.29
0.32
Vdc
Forward Voltage (I
F
= 10 mAdc)
V
F
--
0.35
0.40
Vdc
BAT54RSLT1
CASE 31808, STYLE 11
SOT23 (TO236AB)
30 VOLTS
DUAL HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage -- 0.35 Volts (Typ) @ I
F
= 10 mAdc
3
CAHODE/ANODE
1
ANODE
2
CATHODE
Dual Series Schottky Barrier Diodes
1
3
2