BC846b1/5
1
3
2
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT363/SC88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
CollectorEmitter Voltage
V
CEO
65
45
30
V
CollectorBase Voltage
V
CBO
80
50
30
V
EmitterBase Voltage
V
EBO
6.0
6.0
5.0
V
Collector Current -Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
380
mW
Per Device
250
mW
FR 5 Board, (1) T
A
= 25C
Derate above 25C
3.0
mW/C
Thermal Resistance, Junction to Ambient
R
JA
328
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
1. FR5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
Package
Shipping
BC846BDW1T1
SOT363
3000 Units/Reel
BC847BDW1T1
SOT363
3000 Units/Reel
BC847CDW1T1
SOT363
3000 Units/Reel
BC848BDW1T1
SOT363
3000 Units/Reel
BC848CDW1T1
SOT363
3000 Units/Reel
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
SOT-363 /SC-88
CASE 419B STYLE1
1
3
2
6
4
5
See Table
Q
1
Q
2
6
4
5
BC846b2/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
V
(I
C
= 10 mA)
BC846 Series
65
--
--
BC847 Series
45
--
--
BC848 Series
30
--
--
CollectorEmitter Breakdown Voltage
V
(BR)CES
V
(I
C
= 10
A, V
EB
= 0)
BC846 Series
80
--
--
BC847 Series
50
--
--
BC848 Series
30
--
--
CollectorBase Breakdown Voltage
V
(BR)CBO
V
(I
C
= 10
A)
BC846 Series
80
--
--
BC847 Series
50
--
--
BC848 Series
30
--
--
EmitterBase Breakdown Voltage
V
(BR)EBO
V
(I
E
= 1.0
A)
BC846 Series
6.0
--
--
BC847 Series
6.0
--
--
BC848 Series
5.0
--
--
Collector Cutoff Current
(V
CB
= 30 V)
I
CBO
--
--
15
nA
(V
CB
= 30 V, T
A
= 150C)
--
--
5.0
A
ON CHARACTERISTICS
DC Current Gain
h
FE
--
(I
C
= 10
A, V
CE
= 5.0 V)
BC846B, BC847B, BC848B
--
150
--
BC847C, BC848C
--
270
--
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, BC847B, BC848B
200
290
450
BC847C, BC848C
420
520
800
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
CE(sat)
--
--
0.25
V
CollectorEmitter Saturation Voltage
( I
C
= 100 mA, I
B
= 5.0 mA)
--
--
0.6
BaseEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
--
0.7
--
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
0.9
--
BaseEmitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
580
660
700
mV
BaseEmitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
--
--
770
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
obo
--
--
4.5
pF
Noise Figure (I
C
= 0.2 mA,
NF
dB
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
,
BC846B, BC847B, BC848B
--
--
10
f = 1.0 kHz, BW = 200 Hz)
BC847C, BC848C
--
--
4.0
BC846b3/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
h FE , NORMALIZED DC CURRENT GAIN
V
,VOL
T
AGE (VOL
TS)
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
0.02
0.1
1.0
10
20
2.0
1.6
1.2
0.8
0.4
0
vb
,
TEMPERA
TURE COEFFICIENT
(mV/ C)
1.0
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE(V)
BC846b4/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. CurrentGain Bandwidth Product
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
10
7.0
5.0
3.0
2.0
1.0
C,CAP
ACIT
ANCE(pF)
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
400
300
200
100
80
60
40
30
20
T
f
, CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
0.1 0.2
1.0
10
100
2.0
1.0
0.5
0.2
h
FE
, DC CURRENT GAIN (NORMALIZED)
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0
0.8
0.6
0.4
0.2
0
V
,
VOL
T
A
GE (VOL
TS)
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
VB
,
TEMPERA
TURE COEFFICIENT
(mV/ C)
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
2.0
1.6
1.2
0.8
0.4
0
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE(VOL
TS)
BC846b5/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
SINGLE PULSE
t
1
Z
JA
(t) = r(t) R
JA
R
JA
= 328C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC
(t)
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 11. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
I
C
, COLLECT
OR CURRENT
(mA)
r(t), TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE
, COLLECTOREMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
The safe operating area curves indicate I
C
V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T
J(pk)
= 150C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
< 150C. T
J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
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