M31/4
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
BC847
BC848
Rating
Symbol
BC846
BC850
BC849
Unit
CollectorEmitter Voltage
V
CEO
65
45
30
V
CollectorBase Voltage
V
CBO
80
50
30
V
EmitterBase Voltage
V
EBO
6.0
6.0
5.0
V
Collector Current -- Continuous
I
C
100
100
100
mAdc
Collector Current(Peak value)
I
CM
200
200
200
mAdc
Emitter Current(Peak value)
I
EM
200
200
200
mAdc
Base Current(Peak value)
I
BM
200
200
200
mAdc
SOLDERING CHARACTERISTICS
Characteristic
Symbol
Unit
Solder Heat Resistance
265
C
Solderability
240 to 265
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
Alumina Substrate, (2) T
A
= 25C
300
mW
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
BC846A,B
65
--
--
(I
C
= 10 mA)
BC847A,B,C, BC850B,C
V
(BR)CEO
45
--
--
v
BC848A,B,C, BC849B,C
30
--
--
CollectorEmitter Breakdown Voltage
BC846A,B
80
--
--
(I
C
= 10
A, V
EB
= 0)
BC847A,B,C, BC850B,C
V
(BR)CES
50
--
--
v
BC848A,B,C, BC849B,C
30
--
--
CollectorBase Breakdown Voltage
BC846A,B
80
--
--
(I
C
= 10
A)
BC847A,B,C, BC850B,C
V
(BR)CBO
50
--
--
v
BC848A,B,C, BC849B,C
30
--
--
EmitterBase Breakdown Voltage
BC846A,B
BC847A,B,C
6.0
(I
E
= 1.0
A)
BC848A,B,C, BC849B,C,
V
(BR)EBO
5.0
BC850B,C
5.0
Collector Cutoff Current
(V
CB
= 30 V)
I
CBO
--
--
15
nA
(V
CB
= 30 V, T
A
= 150C)
--
--
5.0
A
1. FR5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
2
EMITTER
3
COLLECTOR
1
BASE
1
3
2
M32/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
h
FE
--
90
--
--
(I
C
= 10
A, V
CE
= 5.0 V)
BC846B, BC847B, BC848B
--
150
--
BC847C, BC848C
--
270
--
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846A, BC847A, BC848A
110
180
220
BC846B, BC847B, BC848B, BC849B, BC850B
200
290
450
BC847C, BC848C, BC849C, BC850C
420
520
800
CollectorEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
CE(sat)
--
--
0.25
V
CollectorEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
--
0.6
BaseEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
--
0.7
--
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
0.9
--
BaseEmitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
580
660
700
mV
BaseEmitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
--
--
770
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
obo
--
--
4.5
pF
Noise Figure (I
C
= 0.2 mA, BC846A, BC847A, BC848A
NF
dB
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
,BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
--
--
10
BC849B,C, BC850B,C
--
--
4.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
V
CE
= 10 V
T
A
= 25C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25C
V
,
VOL
T
AGE (VOL
TS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VB
,
TEMPERA
TURE
COEFFICIENT
(mV/
C
)
1.0
1.2
1.6
2.0
2.4
2.8
3.0
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (V)
I
C
= 200 mA
55C to +125C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
0.2
1.0
10
100
0.02
0.1
1.0
10
20
2.0
1.6
1.2
0.8
0.4
0
I
C
=
10 mA
I
C
= 100 mA
I
C
=
20 mA
I
C
= 50 mA
h
FE
, NORMALIZED DC CURRENT GAIN
M33/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
BC847/BC848
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
T
A
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
V
CE
= 10V
T
A
= 25C
T
A
= 25C
V
CE
= 5V
T
A
= 25C
V
CE(sat)
@ I
C
/I
B
= 10
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/C)
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
,
VOL
T
AGE (VOL
TS)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
C, CAP
ACIT
ANCE(pF)
I
C
=
10 mA
100mA
20mA
200mA
50mA
T
A
= 25C
VB
for V
BE
55C to 125C
C
ob
C
ib
1.0
1.4
1.8
2.2
2.6
3.0
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.4 0.6 0.81.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.1 0.2
1.0
10
100
0.2
0.5 1.0
2.0
5.0
10
20
50
100 200
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.02
0.05 0.1
0.2
0.5
1.0 2.0
5.0
10
20
M34/4
BC846ALT1, BLT1 BC847ALT1, BLT1 CLT1 thru BC850BLT1, CLT1
BC846
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. CurrentGain Bandwidth Product
C, CAP
ACIT
ANCE (pF)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT T
C
ob
C
ib
T
A
= 25C
V
CE
= 5 V
T
A
= 25C
0.1 0.2 0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
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