VH01/4
2Input NAND Gate
V1
d
MC74VHC1G00
V1
d
1
3
2
4
5
SOT23/TSOP5/SC59
DT SUFFIX
CASE 483
The MC74VHC1G00 is an advanced high speed CMOS 2input NAND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
High Speed: t
PD
= 3.0 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
SC70/SC88A/SOT353
DF SUFFIX
CASE 419A
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V
CC
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH02/4
MC74VHC1G00
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
0.5 to + 7.0
V
V
IN
DC Input Voltage
0.5 to V
CC
+ 0.5
V
V
OUT
DC Output Voltage
0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
OUT
DC Output Sink Current
12.5
mA
I
CC
DC Supply Current per Supply Pin
25
mA
T
STG
Storage Temperature Range
65 to + 150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
260
C
T
J
Junction Temperature Under Bias
+ 150
C
JA
Thermal Resistance
SC70/SC88A (Note 1)
150
C/W
TSOP5
200
P
D
Power Dissipation in Still Air at 85C
SC70/SC88A
150
mW
TSOP5
230
MSL
Moisture Sensitivity
Level 1
F
R
Flammability Rating
Oxygen Index: 30% 35%
UL 94 V0 (0.125 in)
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I
LATCHUP
LatchUp Performance
Above V
CC
and Below GND at 85C (Note 5)
500
mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
5.5
V
V
IN
DC Input Voltage
0.0
5.5
V
V
OUT
DC Output Voltage
0.0
V
CC
V
T
A
Operating Temperature Range
55
+ 125
C
t
r
,t
f
Input Rise and Fall Time
V
CC
= 3.3 0.3 V
0
100
ns/V
V
CC
= 5.0 0.5 V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED F
AILURE RA
TE
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
TIME, YEARS
VH03/4
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25C
T
A
< 85C 55C to 125C
Symbol Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
V
IH
Minimum HighLevel
2.0
1.5
1.5
1.5
V
Input Voltage
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
V
IL
Maximum LowLevel
2.0
0.5
0.5
0.5
V
Input Voltage
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V
OH
Minimum HighLevel
V
IN
= V
IH
or V
IL
2.0
1.9
2.0
1.9
1.9
V
Output Voltage
I
OH
= 50
A
3.0
2.9
3.0
2.9
2.9
V
IN
= V
IH
or V
IL
4.5
4.4
4.0
4.4
4.4
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
3.0
2.58
2.48
2.34
I
OH
= 8 mA
4.5
3.94
3.80
3.66
V
OL
Maximum LowLevel
V
IN
= V
IH
or V
IL
2.0
0.0
0.1
0.1
0.1
V
Output Voltage
I
OL
= 50
A
3.0
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
4.5
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
3.0
0.36
0.44
0.52
I
OL
= 8 mA
4.5
0.36
0.44
0.52
I
IN
Maximum Input
V
IN
= 5.5 V or GND
0 to5.5
0.1
1.0
1.0
A
Leakage Current
I
CC
Maximum Quiescent
V
IN
= V
CC
or GND
5.5
2.0
20
40
A
Supply Current
MC74VHC1G00
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25C
T
A
< 85C 55C<T
A
<125C
Symbol Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max Unit
t
PLH
,
Maximum
V
CC
= 3.3
0.3 V
C
L
= 15 pF
4.5
7.9
9.5
11.0
ns
t
PHL
Propagation Delay,
C
L
= 50 pF
5.6
11.4
13.0
15.1
Input A or B to Y
V
CC
= 5.0
0.5 V C
L
= 15 pF
3.0
5.5
6.5
8.0
C
L
= 50 pF
3.8
7.5
8.5
10.0
C
IN
Maximum Input
5.5
10
10
10
pF
Capacitance
Typical @ 25C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
10
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
.
C
PD
is used to determine the no
load dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
*Includes all probe and jig capacitance.
A 1MHz square input wave is recommended
for propagation delay tests.
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