VH31/4
VP
d
MC74VHC1G03
VP
d
1
3
2
4
5
TSOP5/SOT23/SC59
DT SUFFIX
CASE 483
The MC74VHC1G03 is an advanced high speed CMOS 2input NOR gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching
level. This allows the MC74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V
CC
and 7 V using an external
resistor and power supply.
The MC74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
High Speed: t
PD
= 3.6 ns (Typ) at V
CC
= 5 V
Low Internal Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25C
Power Down Protection Provided on Inputs
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 62; Equivalent Gates = 16
SC88A / SOT353/SC70
DF SUFFIX
CASE 419A
1
3
2
4
5
MARKING DIAGRAMS
Pin 1
d = Date Code
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
IN B
2
IN A
3
GND
4
OUT Y
5
V
CC
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
Z
L
H
L
H
L
L
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
2Input NAND Gate with
Open Drain Output
VH32/4
MC74VHC1G03
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
5.5
V
V
IN
DC Input Voltage
0.0
5.5
V
V
OUT
DC Output Voltage
0.0
7.0
V
T
A
Operating Temperature Range
55
+ 125
C
t
r
,t
f
Input Rise and Fall Time
V
CC
= 3.3 0.3 V
0
100
ns/V
V
CC
= 5.0 0.5 V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED F
AILURE RA
TE
Figure 3. Failure Rate vs. Time
Junction Temperature
1
1
10
100
1000
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
0.5 to + 7.0
V
V
IN
DC Input Voltage
0.5 to 7.0
V
V
OUT
DC Output Voltage
V
CC
=0
0.5 to 7.0
V
High or Low State
0.5 to V
cc
+ 0.5
I
IK
Input Diode Current
20
mA
I
OK
Output Diode Current
V
OUT
< GND; V
OUT
> V
CC
+20
mA
I
OUT
DC Output Current, per Pin
+ 25
mA
I
CC
DC Supply Current, V
CC
and GND
+50
mA
P
D
Power dissipation in still air
SC88A, TSOP5
200
mW
JA
Thermal resistance
SC88A, TSOP5
333
C/W
T
L
Lead Temperature, 1 mm from Case for 10 s
260
C
T
J
Junction Temperature Under Bias
+ 150
C
T
stg
Storage temperature
65 to +150
C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I
LATCHUP
LatchUp Performance
Above V
CC
and Below GND at 125C (Note 5)
500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
TIME, YEARS
VH33/4
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25C
T
A
< 85C 55C<T
A
<125C
Symbol Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
V
IH
Minimum HighLevel
2.0
1.5
1.5
1.5
V
Input Voltage
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
V
IL
Maximum LowLevel
2.0
0.5
0.5
0.5
V
Input Voltage
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V
OH
Minimum HighLevel
V
IN
= V
IH
or V
IL
2.0
1.9
2.0
1.9
1.9
V
Output Voltage
I
OH
= 50
A
3.0
2.9
3.0
2.9
2.9
V
IN
= V
IH
or V
IL
4.5
4.4
4.0
4.4
4.4
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
3.0
2.58
2.48
2.34
I
OH
= 8 mA
4.5
3.94
3.80
3.66
V
OL
Maximum LowLevel
V
IN
= V
IH
or V
IL
2.0
0.0
0.1
0.1
0.1
V
Output Voltage
I
OL
= 50
A
3.0
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
4.5
0.0
0.1
0.1
0.1
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
3.0
0.36
0.44
0.52
I
OL
= 8 mA
4.5
0.36
0.44
0.52
I
IN
Maximum Input
V
IN
= 5.5 V or GND
0 to5.5
0.1
1.0
1.0
A
Leakage Current
I
CC
Maximum Quiescent
V
IN
= V
CC
or GND
5.5
2.0
20
40
A
Supply Current
I
OPD
Maximum Offstate
V
OUT
= 5.5 V
0
0.25
2.5
5.0
A
Leakage Current
MC74VHC1G03
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25C
T
A
< 85C 55C to 125C
Symbol Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max Unit
t
PZL
Maximum Output
V
CC
= 3.3 0.3 V C
L
= 15 pF
5.6
7.9
9.5
11.0
ns
Enable Time,
R
L
= R
I
= 500
C
L
= 50 pF
8.1
11.4
13.0
15.5
Input A or B to Y
V
CC
= 5.0 0.5 V C
L
= 15 pF
3.6
5.5
6.5
8.0
R
L
= R
I
= 500
C
L
= 50 pF
5.1
7.5
8.5
10.0
t
PLZ
Maximum Output
V
CC
= 3.3 0.3 V C
L
= 50 pF
8.1
11.4
13.0
15.5
ns
Disable Time
R
L
= R
I
= 500
V
CC
= 5.0 0.5 V C
L
= 50 pF
5.1
7.5
8.5
10.0
R
L
= R
I
= 500
C
IN
Maximum Input
4
10
10
10
pF
Capacitance
Typical @ 25C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
18
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
x
V
CC
x
f
in
+ I
CC
.
C
PD
is used to determine the no
load dynamic power consumption; P
D
= C
PD
x
V
CC
2
x
f
in
+ I
CC
x
V
CC
.
VH34/4
MC74VHC1G03
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Logic
Circuit
Indicator
Temp
Range
Identifier
Technology
Device
Function
Package
Suffix
Tape and
Reel Suffix
Package Type
(Name/SOT#/
Common Name)
Tape and
Reel Size
MC74VHC1G03DFT1
MC
74
VHC1G
03
DF
T1
SC70/SC88A/
178 mm (7 in)
SOT353
3000 Unit
MC74VHC1G03DFT2
MC
74
VHC1G
03
DF
T2
SC70/SC88A/
178 mm (7 in)
SOT353
3000 Unit
MC74VHC1G03DFT4
MC
74
VHC1G
03
DF
T4
SC70/SC88A/
330 mm (13 in)
SOT353
10,000 Unit
MC74VHC1G03DTT1
MC
74
VHC1G
03
DT
T1
SOT23/TSOPS/
178 mm (7 in)
SC59
3000 Unit
MC74VHC1G03DTT3
MC
74
VHC1G
03
DT
T3
SOT23/TSOPS/
330 mm (13 in)
SC59
10,000 Unit
Figure 5. Switching Waveforms
Figure 4. Output Voltage Mismatch Application
C
L
= 50 pF equivalent (Includes jig and probe capacitance)
R
L
= R
1
= 500
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
Figure 6. Test Circuit
Figure 7. Complex Boolean Functions
Figure 8. LED Driver
Figure 9. GTL Driver
3
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