I11/2
CASE 31808, STYLE 8
SOT 23 (TO236AB)
MMBV105GLT1
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
Controlled and Uniform Tuning Ration
Silicon Tuning Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Va l u e
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Device Dissipation @T
A
= 25C
P
D
225
mW
Derate above 25C
1.8
mW/C
Junction Temperature
T
J
+125
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
--
Vdc
( I
R
=10
Adc)
Reverse Voltage Leakage Current
I
R
--
50
nAdc
( V
R
=28Vdc)
Min
Max
Typ
Min
Max
MMBV105GLT1
1.5
2.8
250
4.0
6.5
Device Type
C
T
V
R
=25Vdc,f =1.0MHz
p F
Q
V
R
=3.0Vdc
f=50MHz
C
R
C
3
/ C
2 5
f=1.0MHz
1
3
2
I12/2
MMBV105GLT1
C
T
, DIODE CAP
ACIT
ANCE (pF)
Q , FIGURE OF MERIT
1000
100
10
10
100
1000
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
0.3
0.5
1.0
2.0
3.0
5.0
10
20 30
f
, FREQUENCY ( MHz )
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
f
= 1.0MHz
T
A
= 25C
V
R
=3Vdc
T
A
= 25C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
0
+25
+50
+75
+100
+125
T
A
, AMBIENT TEMPERATURE (C)
Figure 3. Diode Capacitance
C
T
,
DIODE
CAP
ACIT
ANCE
(NORMALIZED)
TYPICAL CHARACTERISTICS
V
R
= 3.0Vdc
f
= 1.0MHz
PDF 
ZIP