EtronTech
EM564161
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
256K x 16 Low Power SRAM
Preliminary, Rev 2.6
10/2000
Features
Single power supply voltage of 2.3V to 3.6V
Power down features using CE1# and CE2
Low power dissipation
Data retention supply voltage: 1.0V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40
C to 85
C
Standby current @ VDD = 3.6 V
I
DDS2
Typical
Maximum
EM564161BA/BC-70/85
1
A
10
A
EM564161BA-70E/85E
5
A
80
A
Ordering Information
Part Number
Speed
I
DDS2
Package
EM564161BC-70
70 ns
10
A
6x8 BGA
EM564161BA-70
70 ns
10
A
8x10 BGA
EM564161BA-70E
70 ns
80
A
8x10 BGA
EM564161BC-85
85 ns
10
A
6x8 BGA
EM564161BA-85
85 ns
10
A
8x10 BGA
EM564161BA-85E
85 ns
80
A
8x10 BGA
Overview
Pin Configuration
48-Ball BGA (CSP), Top View
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB#
OE#
A0
A1
A2
CE2
NC
A8
A9
A10
A11
NC
DQ15
NC
A12
A13
W E#
DQ7
DQ14
DQ13
A14
A15
DQ5
DQ6
VDD
DQ12
NC
A16
DQ4
GN D
DQ8
UB#
A3
A4
CE1#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
GND
DQ11
A17
A7
DQ3
VD D
Pin Description
Symbol
Function
A0 - A17
Address Inputs
DQ0 - DQ15
Data Inputs / Outputs
CE1#, CE2
Chip Enable Inputs
OE#
Output Enable
WE#
Read / Write Control Input
LB#, UB#
Data Byte Control Inputs
GND
Ground
V
DD
Power Supply
NC
No Connection
The EM564161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating range from -40
C to 85
C, the EM564161 can be used in environments exhibiting
extreme temperature conditions.
EtronTech
EM564161
Preliminary
2
Rev 2.6
October 2000
Block Diagram
A0
A17
VDD
GND
MEMORY
CELL ARRAY
2,048X128X16
(4,194,304)
COLUMN ADDRESS
DECODER
SENSE
AMP
CE2
CE1#
LB#
OE#
WE#
UB#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
POWER DOWN
CIRCUIT
EtronTech
EM564161
Preliminary
3
Rev 2.6
October 2000
Operating Mode
Mode
CE1#
CE2
OE#
WE#
LB#
UB#
DQ0~DQ7
DQ8~DQ15
L
L
DOUT
DOUT
H
L
High-Z
DOUT
Read
L
H
L
H
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
Write
L
H
X
L
L
H
DIN
High-Z
L
H
H
H
X
X
Output Deselect
L
H
X
X
H
H
High-Z
High-Z
H
X
X
X
X
X
Standby
X
L
X
X
X
X
High-Z
High-Z
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
-0.3 to +4.6V
Input voltages, VIN
-0.3 to +4.6V
Input and output voltages, VI/O
-0.5 to VDD
+0.5V
Operating temperature, TOPR
-40 to +85
C
Storage temperature, TSTRG
-55 to +150
C
Soldering Temperature (10s), TSOLDER
260
C
Power dissipation, PD
0.6 W
DC Recommended Operating Conditions (Ta=-40
C to 85
C)
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.3
-
3.6
V
VIH
Input High Voltage
2.2
-
VDD + 0.3
(1)
V
VIL
Input Low Voltage
-0.3
(2)
-
0.6
V
VDR
Data Retention Supply Voltage
1.0
-
3.6
V
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
20ns
(2) Undershoot : -2.0V in case of pulse width
20ns
EtronTech
EM564161
Preliminary
4
Rev 2.6
October 2000
DC Characteristics
(Ta = -40
C to 85
C, VDD = 2.3V to 3.6V)
Parameter
Symbol
Test Conditions
Min
Typ*
Max Unit
Input low current
IIL
IIN = 0V to VDD
- 1
-
1
A
Output low
voltage
VOL
IOL = 2.1 mA
-
-
0.4
V
Output high
voltage
VOH
IOH = -1.0 mA
VDD -
0.15
-
-
V
VDD = 3.6 V
-
15
25
VDD = 2.7 V
-
10
15
IDD1
Cycle time
= min
VDD = 2.3 V
-
7
12
Operating current
IDD2
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
Cycle time = 1
s
-
-
5
mA
IDDS1 CE1# = VIH or CE2 = VIL
-
-
0.5
mA
VDD = 3.6 V
-
1
10
VDD = 2.7 V
-
0.8
5
Standby current
IDDS2
**
(Note)
CE1# = VDD 0.2V or
CE2 = 0.2V
-70/85
VDD = 2.3 V
-
0.5
3
A
-70E/85E
VDD = 3.6 V
-
5
80
Notes:
* Typical value are measured at T
a
= 25
C.
** In standby mode with CE1#
VDD - 0.2V, these limits are assured for the condition
CE2
V
DD
- 0.2V or CE2
0.2V.
Capacitance (Ta = 25
C; f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
CIN
-
-
10
pF
VIN = GND
Output capacitance
COUT
-
-
10
pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
EtronTech
EM564161
Preliminary
5
Rev 2.6
October 2000
AC Characteristics and Operating Conditions (Ta = -40
C to 85
C, VDD = 2.3V to 3.6V)
Read Cycle
EM564161
-85
-70
Symbol
Parameter
Min Max Min Max
Unit
tRC
Read cycle time
85
-
70
-
tAA
Address access time
-
85
-
70
tCO1
Chip Enable (CE1#) Access Time
-
85
-
70
tCO2
Chip Enable (CE2) Access Time
-
85
-
70
tOE
Output enable access time
-
45
-
35
tBA
Data Byte Control Access Time
-
45
-
35
tLZ
Chip Enable Low to Output in Low-Z
10
-
10
-
tOLZ
Output enable Low to Output in Low-Z
3
-
3
-
tBLZ
Data Byte Control Low to Output in Low-Z
5
-
5
-
tHZ
Chip Enable High to Output in High-Z
-
35
-
25
tOHZ
Output Enable High to Output in High-Z
-
35
-
25
tBHZ
Data Byte Control High to Output in High-Z
-
35
-
25
tOH
Output Data Hold Time
10
-
10
-
ns
Write Cycle
EM564161
-85
-70
Symbol
Parameter
Min Max Min Max
Unit
tWC
Write cycle time
85
-
70
-
tWP
Write pulse width
55
-
55
-
tCW
Chip Enable to end of write
70
-
60
-
tBW
Data Byte Control to end of Write
70
-
60
-
tAS
Address setup time
0
-
0
-
tWR
Write Recovery time
0
-
0
-
tWHZ
WE# Low to Output in High-Z
-
35
-
30
tOW
WE# High to Output in Low-Z
5
-
5
-
tDS
Data Setup Time
35
-
30
-
tDH
Data Hold Time
0
-
0
-
ns
AC Test Condition
Output load : 50pF + one TTL gate
Input pulse level : 0.4V, 2.4V
Timing measurements : 0.5 x V
DD
tR, tF : 5ns
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