Pr
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mi
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FEATURES
High Voltage Operation : V
DS
=50V
High Power : 46.5dBm (typ.) @ P3dB
High Efficiency: 60%(typ.) @ P3dB
Linear Gain : 12dB(typ.) @ f=2700MHz
Broad Frequency Range : 800 to 2800MHz
Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with
50V operation, and gives you higher gain.
This device target applications are low current and wide band
applications for high voltage.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
120 V
Gate-Source Voltage V
GS
Tc=25
o
C -5 V
Total Power Dissipation P
t
56.25 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
250
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=50V I
DS
=11mA -1.0 -2.0 -3.5 V
Gate-Drain Breakdown Voltage V
GDO
I
GS
=- 5.6 mA
- -350 - V
3dB Gain Compression Power P
3dB
V
DS
=50V 45.5 46.5 - dBm
Drain Efficiency
d
I
DS(DC)
=200mA - 60 - %
Linear Gain G
L
f=2.7GHz
11.0 12.0 - dB
Thermal Resistance R
th
Channel to Case - 3.0 4.0
o
C/W
Edition 1.0
June 2005
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
50 V
Forward Gate Current I
GF
R
G
=15
<6.1
mA
Reverse Gate Current I
GR
R
G
=15
>-2.2
mA
Channel Temperature T
ch
200
o
C
EGN030MK
High Voltage - High Power GaN-HEMT
Preliminary
Eudyna GaN-HEMT 30W
Pr
eli
mi
na
ry
2
Output Power vs. Frequency
V
DS
=50V I
DS(DC)
=200mA
Output Power and Drain Efficiency vs. Input Power
V
DS
=50V I
DS(DC)
=200mA f=2.7GHz
Power Derating Curve
High Voltage - High Power GaN-HEMT
EGN030MK
30
32
34
36
38
40
42
44
46
48
50
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
Frequency [GHz]
Output Power [dBm]
Pin=22dBm
Pin=26dBm
Pin=30dBm
Pin=34dBm
Pin=38dBm
30
32
34
36
38
40
42
44
46
48
50
21 23 25 27 29 31 33 35 37 39
Input power [dBm]
Output Power [dBm]
0
10
20
30
40
50
60
70
80
90
100
Drain Efficiency [%]
Output
Power
Drain
Effi.
0
10
20
30
40
50
60
0
50
100
150
200
250
300
Case Temperature [
]
Total Power Dissipation [W]
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