Pr
eli
mi
na
ry
FEATURES
High Voltage Operation : V
DS
=50V
High Gain: 15dB(typ.) at P
out
=42dBm(Avg.)
High Efficiency: 35%(typ.) at P
out
=42dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency,
high gain, ease of matching, greater consistency and broad bandwidth
for high power L-band amplifiers with 50V operation. This device is
targeted for high voltage, low current operation in digitally modulated
base station applications - ideally suited for W-CDMA base station
amplifiers and other HPA designs while offering ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
120 V
Gate-Source Voltage V
GS
T
c
=25
o
C -5 V
Total Power Dissipation P
t
160 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
250
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
Min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=50V I
DS
=36mA -1.0 -2.0 -3.5 V
Gate-Drain Breakdown Voltage V
GDO
I
GS
= -18 mA
- -350 - V
3rd Order Inter modulation Distortion IM
3
V
DS
=50V - -32 - dBc
Power Gain G
p
I
DS(DC)
=500mA 14.0 15.0 - dB
Drain Efficiency
d
P
out
=42dBm(Avg.) - 35 - %
Note 1
Thermal Resistance R
th
Channel to Case - 1.2 1.4
o
C/W
Note 1 : IM3 and Gain test condition as follows:
IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured
over 3.84MHz at fo-10MHz and fI+10MHz.
Edition 1.0
May 2005
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
50 V
Forward Gate Current I
GF
R
G
=5
<19.4 mA
Reverse Gate Current I
GR
R
G
=5
>-7.2
mA
Channel Temperature T
ch
200
o
C
EGN21A090IV
High Voltage - High Power GaN-HEMT
Preliminary
Eudyna GaN-HEMT 90W
Pr
eli
mi
na
ry
2
EGN21A090IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
V
DS
=50V, I
DS
=500mA
2-tone IMD vs. Output Power
V
DS
=50V, f
1
=2.135GHz, f
2
=2.145GHz, 10MHz Spacing
2-tone IMD vs. Tone Spacing, V
DS
=50V, I
DS
=500mA
P
out
=42dBm(average) Center Frequency=2.14GHz
Output Power and Drain Efficiency vs. Input Power
V
DS
=50V, I
DS
=500mA, f=2.14GHz
Dr
ain Efficien
cy [%]
-50
-45
-40
-35
-30
-25
-20
26 28 30 32 34 36 38 40 42 44 46 48
Output Power(average) [dBm]
IM3 [dBc]
250mA
500mA
750mA
1000mA
-55
-50
-45
-40
-35
-30
-25
-20
2-tone Spacing [MHz]
IMD [dBc]
IM3 lower
IM3 upper
IM5 lower
IM5 upper
IM7 lower
IM7 upper
0.1
1.0
10
36
38
40
42
44
46
48
50
2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24
Frequency [GHz]
Output Powe
r [dBm]
Pin=22dBm
Pin=24dBm
Pin=26dBm
Pin=28dBm
Pin=30dBm
Pin=32dBm
Pin=34dBm
Pin=36dBm
32
34
36
38
40
42
44
46
48
50
52
16 18 20 22 24 26 28 30 32 34 36 38 40
Input Power [dBm]
Output Powe
r [dBm]
0
10
20
30
40
50
60
70
80
90
100
Drain
Effi.
Output
Power
Pr
eli
mi
na
ry
3
EGN21A090IV
High Voltage - High Power GaN-HEMT
2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power
V
DS
=50V, I
DS
=500mA, f
1
=2.135GHz, f
2
=2.145GHz(10MHz Spacing)
Peak/Avg. = 8.5dB@0.01% Probability(CCDF)
2-Carrier ACLR, Drain Efficiency and Power Gain
vs. Output Power with DPD Operation (note
V
DS
=50V, I
DS
=500mA
f
1
=2.1375GHz, f
2
=2.1425GHz(5MHz Spacing)
Peak/Avg. = 6.5dB@0.01% Probability(CCDF);
Single Carrier Signal
Note) Digital Predistortion evaluation test system:
PMC-Sierra PALADIN-15 DPD chip-set
Dr
ain Efficien
cy [%], Pow
e
r
G
a
in
[d
B]
Output Power [dBm]
ACLR(5MHz offset) [dBc]
Dr
ain Efficien
cy [%], Pow
e
r
G
a
in
[d
B]
10
dB
/d
iv
2-carrier Spectrum with DPD Operation
DPD-OFF
DPD-ON
Center Frequency=2.14GHz
5MHz/div
Pave=42dBm
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
28
30
32
34
36
38
40
42
44
46
Output Power [dBm]
IMD [dBc]
0
5
10
15
20
25
30
35
40
45
50
Drain
Effi.
IM3
Power
Gain
IM5
IM7
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
30
32
34
36
38
40
42
44
46
0
5
10
15
20
25
30
35
40
45
Drain
Effi.
ACLR
DPD-OFF
Power
Gain
ACLR
DPD-ON
PDF 
ZIP