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FEATURES
High Voltage Operation : V
DS
=50V
High Power : 53.0dBm (typ.) @ P3dB
High Efficiency: 55%(typ.) @ P3dB
Linear Gain : 14.0dB(typ.) @ f=2.6GHz
Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
120 V
Gate-Source Voltage V
GS
T
c
=25
o
C -5 V
Total Power Dissipation P
t
281.25 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
250
o
C
Edition 1.2
Dec. 2005
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
50 V
Forward Gate Current I
GF
R
G
=2
<TBD mA
Reverse Gate Current I
GR
R
G
=2
>-7.2
mA
Channel Temperature T
ch
200
o
C
ES/EGN26A180IV
High Voltage - High Power GaN-HEMT
Preliminary
Eudyna GaN-HEMT 180W
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=50V I
DS
=72mA -1.0 -2.0 -3.5 V
Gate-Drain Breakdown Voltage V
GDO
I
GS
=- 36mA
- -350 - V
3dB Gain Compression Power P
3dB
V
DS
=50V TBD 53.0 -
dBm
Drain Efficiency
d
I
DS(DC)
=1000mA - 55 - %
Linear Gain G
L
f=2.6GHz
TBD 14.0 - dB
Thermal Resistance R
th
Channel to Case - 0.65 0.8
o
C/W
Pr
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mi
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Output Power vs. Frequency
V
DS
=50V I
DS(DC)
=1000mA
Output Power and Drain Efficiency vs. Input Power
V
DS
=50V I
DS(DC)
=1000mA f=2.6GHz
Power Derating Curve
High Voltage - High Power GaN-HEMT
ES/EGN26A180IV
36
38
40
42
44
46
48
50
52
54
56
2.45
2.50
2.55
2.60
2.65
2.70
2.75
Frequency [GHz]
Ou
tp
u
t
Po
wer
[d
B
m
]
Pin=26dBm
Pin=30dBm
Pin=34dBm
Pin=38dBm
Pin=42dBm
36
38
40
42
44
46
48
50
52
54
56
25 27 29 31 33 35 37 39 41 43
Input Power [dBm]
Ou
tp
u
t
Po
wer
[d
B
m
]
0
10
20
30
40
50
60
70
80
90
100
D
r
ai
n
Effi
ci
en
cy [%]
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Case Temperature [
o
C]
T
o
t
al
Po
wer
D
i
ssi
p
asi
o
n
[W
]
Edition 1.2
Dec. 2005
2
Pr
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IV Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
4
Edition 1.2
Dec. 2005
High Voltage - High Power GaN-HEMT
ES/EGN26A180IV
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