Pr
eli
mi
na
ry
FEATURES
High Voltage Operation : V
DS
=50V
High Gain: 28.5dB(typ.) at P
out
=22dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
Proven Reliability
Small and Low Cost Metal Base Package
DESCRIPTION
The EMC21L1004GN is a high-gain and wide-band 2-stage HIC
amplifier module with 50V operation.
This module is targeted for high voltage, low current operation in digitally
modulated base station. This product is ideally suited not only for W-
CDMA base station amplifiers but also other HPA while offering ease for
use.
Edition 1.0
June 2005
1
EMC21L1004GN
High Voltage - High Power GaN-HEMT
Power Amplifier Module
Preliminary
Eudyna GaN-HEMT 10W
RECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25
o
C)
Item
Symbol
Unit
DC Input Voltage (Drain)
V
dd1,2
V
DC Input Voltage (Gate)
V
gg1,2
V
Input Power
P
in
dBm
<10
-3
50
Condition
ELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25
o
C)
Min. Typ. Max.
Frequency
f
-
2.11
-
2.17
GHz
Linear Gain
G
L
26.0
28.5
31.0
dB
Gain Deviation
d-Ga
-
0.2
0.5
dBp_p
Input VSWR
VSWRi
-
1.5:1
2.5:1
-
DC Input Current
Idd(DC
)
-
210
250
mA
DC Input Current
I
gg(DC)
-
6.0
15.0
mA
3rd Order Intermodulation
Distortion Ratio
IM
3
-
-47.0
-45.0
dBc
DC Input Current
I
dd
-
200
250
mA
Note 1 : IM
3
and I
dd
test condition as follows:
IM
3
&I
dd
: f
0
=2.135GHz, f
1
=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg.=8.5dB@0.01% probability(CCDF))
measured over 3.84MHz at f0-10MHz and f1+10MHz.
Note 2 : The RF parameters are measured with test fixture.
V
dd1,2
=50V
V
gg1,2
=-3.0V
Without RF
Unit
V
dd1
,2=50V
V
gg1,2
=-3.0V
P
out
=22dBm(Avg.)
(Note 1)
V
dd1,2
=50V
V
gg1,2
=-3.0V
P
in
=-10dBm
Item
Symbol
Condition
Limit
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
DC Input Voltage (Drain)
V
dd1,2
V
DC Input Voltage (Gate)
V
gg1,2
V
Input Power
P
in
dBm
Storage Temperature
T
stg
o
C
Operating Case Temperature
T
op
-40 to +100
-20 to +85
Rating
0 to +52
-7 to 0
+20
o
C
Pr
eli
mi
na
ry
2
EMC21L1004GN
High Voltage - High Power GaN-HEMT
Power Amplifier Module
2-tone IMD vs. Output Power
V
dd1,2
=50V V
gg1,2
=-3.0V f
1
=2.135GHz f
2
=2.145GHz(10MHz Spacing)
Output Power and Drain Efficiency vs. Input Power
V
dd1,2
=50V V
gg1,2
=-3.0V
Dr
ain Efficien
cy [%]
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power(average) [dBm]
IMD [dBc]
IM3
IM5
IM7
18
20
22
24
26
28
30
32
34
36
38
40
42
-6 -4 -2
0
2
4
6
8 10 12 14 16 18
Input Power [dBm]
Output Powe
r [dBm]
0
10
20
30
40
50
60
2.11GHz
2.14GHz
2.17GHz
Drain
Effi.
Output
Power
Pr
eli
mi
na
ry
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
16
18
20
22
24
26
28
30
32
Output Power [dBm]
IMD [dBc]
IM3
IM5
IM7
3
EMC21L1004GN
High Voltage - High Power GaN-HEMT
Power Amplifier Module
2-Carrier IMD vs. Output Power
V
dd1,2
=50V V
gg1,2
=-3.0V f
1
=2.135GHz, f
2
=2.145GHz(10MHz Spacing)
Peak/Avg. = 8.5dB@0.01% Probability(CCDF)
10
12
14
16
18
20
22
24
26
28
30
16
18
20
22
24
26
28
30
32
Output Power [dBm]
Power Gain [dB]
0
50
100
150
200
250
300
350
400
450
500
Drain Current [m
A]
Drain
Current
Power
Gain
Power Gain and Drain Current vs. Output Power
V
dd1,2
=50V V
gg1,2
=-3.0V f
1
=2.135GHz, f
2
=2.145GHz(10MHz Spacing)
Peak/Avg. = 8.5dB@0.01% Probability(CCDF)
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