1
Edition 1.1
July 1999
FLC107WG
C-Band Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
7.5
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
400
600
-
200
-
-1.0
-2.0
-3.5
-5
-
-
7.0
8.0
-
-
36
-
28.5
30.0
-
VDS = 5V, IDS = 20mA
VDS = 5V, IDS = 250mA
VDS = 5V, VGS = 0V
IGS = -20A
Channel to Case
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8 GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
add
Thermal Resistance
-
16
20
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
G.C.P.: Gain Compression Point
CASE STYLE: WG
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB = 30.0dBm(Typ.)
High Gain: G1dB = 8.0dB(Typ.)
High PAE: add = 36%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
2
FLC107WG
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
4
2
8
10
6
0
50
100
150
200
2
0
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (W)
200
100
400
300
500
Drain Current (mA)
VGS =0V
-0.5V
-1.5V
-2.0V
-1.0V
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6 IDSS
12 14 16 18 20 22
Input Power (dBm)
29
31
27
25
23
21
19
30
40
50
20
10
Output Power (dBm)
add
6 GHz
8 GHz
6 GHz
8 GHz
Pout
add
(%)
add
(%)
P1dB & add vs. VDS
f=8GHz
IDS 0.6 IDSS
8
9
10
Drain-Source Voltage (V)
31
30
29
40
30
50
P
1dB
(dBm)
add
P1dB
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLC107WG
C-Band Power GaAs FET
2-1.60.01
(0.063)
0.5
(0.020)
6.10.1
(0.240)
1.0 Min.
(0.039)
1.0 Min.
(0.039)
0.03
0.6
2.5
0.15
(0.098)
Case Style "WG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1
2
3
8.50.2
(0.335)
2.8
(0.11)
0.80.1
(0.031)
0.10.05
(0.004)
2.5 Max.
(0.098)
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