1
Edition 1.3
July 1999
FLK027XP, FLK027XV
GaAs FET & HEMT Chips
Drain
Source
Source
Gate
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
-
100
150
-
50
-
-1.0
-2.0
-3.5
-5
-
-
6
7
-
-
32
-
23
24
-
VDS = 5V, IDS = 5mA
VDS = 5V, IDS = 65mA
VDS = 5V, VGS = 0V
IGS = -5
A
VDS = 10V
IDS
0.6IDSS
f = 14.5GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
add
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case
-
40
80
C/W
Thermal Resistance
Rth
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DESCRIPTION
The FLK027XP, and FLK027XV chip is a power GaAs FET that is
designed for general purpose applications in the Ku-Band frequency
range as it provides superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
1.88
-65 to +175
175
Tc = 25
C
V
V
W
C
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
C.
FEATURES
High Output Power: P1dB = 24.0dBm(Typ.)
High Gain: G1dB = 7.0dB(Typ.)
High PAE:
add = 32%(Typ.)
Proven Reliability
2
FLK027XP, FLK027XV
GaAs FET & HEMT Chips
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
2
0
50
100
150
200
2
4
6
8
10
Case Temperature (
C)
Drain-Source Voltage (V)
Total Power Dissipation (W)
24
22
20
18
16
7
9
11
13
15 17
19
Input Power (dBm)
Output Power (dBm)
100
75
50
25
Drain Current (mA)
VGS =0V
-0.5V
-1.5V
-2.0V
-1.0V
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS
0.6IDSS
f = 14.5GHz
add
Pout
40
20
add
(%)
24
25
23
22
21
8
9
10
Drain-Source Voltage (V)
P
1dB
(dBm)
P1dB &
add vs. VDS
f = 14.5GHz
IDS
0.6IDSS
add
P1dB
30
40
20
add
(%)
3
FLK027XP, FLK027XV
GaAs FET & HEMT Chips
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
1.000
-3.3
4.479
177.6
.003
88.1
.735
-1.1
500
.996
-16.4
4.436
168.1
.013
80.7
.732
-5.4
1000
.984
-32.4
4.309
156.4
.025
71.7
.721
-10.6
1500
.967
-47.6
4.121
145.3
.035
63.2
.705
-15.4
2000
.947
-61.7
3.894
135.0
.044
55.5
.687
-19.8
2500
.926
-74.7
3.651
125.3
.052
48.5
.668
-23.7
3000
.907
-86.5
3.407
116.4
.058
42.2
.649
-27.3
3500
.890
-97.2
3.174
108.2
.063
36.6
.633
-30.6
4000
.874
-107.0
2.956
100.5
.067
31.6
.618
-33.7
4500
.861
-115.8
2.756
93.4
.070
27.
.605
-36.6
5000
.850
-123.9
2.573
86.7
.072
22.9
.594
-39.4
5500
.841
-131.3
2.409
80.4
.074
19.2
.585
-42.1
6000
.834
-138.0
2.259
74.4
.076
15.8
.578
-44.8
6500
.828
-144.3
2.125
68.6
.077
12.6
.571
-47.5
7000
.823
-150.1
2.003
63.1
.078
9.6
.566
-50.2
7500
.820
-155.5
1.892
57.8
.079
6.9
.562
-52.9
8000
.817
-160.6
1.792
52.6
.080
4.3
.559
-55.7
8500
.815
-165.4
1.700
47.6
.080
1.8
.556
-58.4
9000
.813
-169.8
1.616
42.8
.080
-0.5
.555
-61.2
9500
.812
-174.1
1.538
38.0
.080
-2.8
.553
-64.1
10000
.812
-178.1
1.467
33.4
.081
-4.9
.553
-66.9
10500
.812
178.1
1.401
28.8
.081
-6.9
.553
-69.9
11000
.812
174.4
1.340
24.3
.080
-8.9
.553
-72.8
11500
.813
171.0
1.283
19.9
.080
-10.9
.554
-75.8
12000
.814
167.6
1.230
15.6
.080
-12.7
.555
-78.8
12500
.815
164.4
1.181
11.3
.080
-14.5
.557
-81.9
13000
.816
161.3
1.134
7.1
.080
-16.3
.559
-85.0
13500
.818
158.4
1.090
3.0
.079
-18.0
.562
-88.1
14000
.819
155.5
1.048
-1.1
.079
-19.7
.565
-91.3
14500
.821
152.8
1.009
-5.2
.078
-21.3
.568
-94.4
15000
.823
150.1
0.971
-9.2
.078
-23.0
.571
-97.6
15500
.825
147.6
0.936
-13.1
.078
-24.5
.575
-100.8
16000
.827
145.1
0.902
-17.1
.077
-26.1
.580
-104.1
16500
.829
142.7
0.869
-21.0
.076
-27.6
.584
-107.3
17000
.831
140.4
0.838
-24.8
.076
-29.1
.589
-110.6
17500
.834
138.1
0.808
-28.6
.075
-30.6
.594
-113.9
18000
.836
135.9
0.780
-32.4
.075
-32.0
.600
-117.1
18500
.838
133.8
0.752
-36.2
.074
-33.5
.606
-120.4
19000
.841
131.7
0.725
-39.9
.073
-34.9
.612
-123.7
19500
.843
129.7
0.700
-43.6
.073
-36.2
.618
-127.0
20000
.846
127.8
0.675
-47.2
.072
-37.6
.625
-130.2
NOTE:* The data includes bonding wires.
n: number of wires
Gate
n=1 (0.2mm length, 25m Dia Au wire)
Drain
n=1 (0.2mm length, 25m Dia Au wire)
Source n=4 (0.3mm length, 25m Dia Au wire)
FREQUENCY
S11
S21
S12
S22
(MHZ) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
1.000
-3.3
4.479
177.6
.003
88.1
.735
-1.1
500
.996
-16.4
4.436
168.1
.013
80.7
.732
-5.4
1000
.984
-32.4
4.310
156.5
.025
71.6
.721
-10.6
1500
.968
-47.6
4.122
145.4
.035
63.1
.705
-15.4
2000
.948
-61.7
3.896
135.0
.044
55.4
.687
-19.8
2500
.928
-74.7
3.653
125.4
.052
48.3
.668
-23.8
3000
.909
-86.5
3.410
116.5
.058
42.0
.649
-27.4
3500
.892
-97.2
3.177
108.3
.063
36.3
.633
-30.7
4000
.877
-107.0
2.959
100.6
.067
31.2
.618
-33.8
4500
.864
-115.8
2.759
93.5
.070
26.6
.605
-36.7
5000
.854
-123.9
2.576
86.8
.073
22.5
.594
-39.5
5500
.845
-131.2
2.411
80.4
.075
18.7
.585
-42.2
6000
.837
-138.0
2.262
74.4
.077
15.2
.577
-44.9
6500
.831
-144.3
2.127
68.7
.078
11.9
.571
-47.6
7000
.827
-150.1
2.005
63.1
.079
8.9
.566
-50.3
7500
.823
-155.5
1.894
57.8
.080
6.0
.562
-53.0
8000
.820
-160.5
1.793
52.7
.081
3.3
.558
-55.8
8500
.818
-165.3
1.701
47.7
.081
0.8
.556
-58.5
9000
.816
-169.7
1.617
42.8
.082
-1.6
.554
-61.3
9500
.815
-174.0
1.539
38.0
.082
-4.0
.553
-64.1
10000
.814
-178.0
1.468
33.4
.082
-6.2
.552
-67.0
10500
.814
178.2
1.402
28.8
.082
-8.4
.552
-69.9
11000
.814
174.6
1.341
24.3
.083
-10.5
.553
-72.8
11500
.814
171.1
1.284
19.9
.083
-12.5
.553
-75.8
12000
.815
167.8
1.231
15.6
.083
-14.5
.555
-78.8
12500
.816
164.6
1.181
11.3
.082
-16.4
.556
-81.8
13000
.817
161.5
1.135
7.1
.082
-18.3
.558
-84.9
13500
.818
158.6
1.091
3.0
.082
-20.2
.561
-88.0
14000
.820
155.8
1.049
-1.1
.082
-22.0
.564
-91.1
14500
.821
153.0
1.010
-5.2
.082
-23.8
.567
-94.3
15000
.823
150.4
.973
-9.2
.081
-25.6
.570
-97.4
15500
.825
147.8
.937
-13.2
.081
-27.4
.574 -100.6
16000
.827
145.4
.904
-17.1
.081
-29.1
.578 -103.8
16500
.829
143.0
.872
-21.0
.080
-30.8
.583 -107.0
17000
.831
140.7
.841
-24.9
.080
-32.5
.588
-110.3
17500
.833
138.4
.811
-28.7
.079
-34.2
.593
-113.5
18000
.835
136.2
.783
-32.5
.079
-35.8
.598
-116.7
18500
.837
134.1
.756
-36.2
.078
-37.5
.604 -120.0
19000
.839
132.1
.729
-39.9
.078
-39.1
.610 -123.2
19500
.842
130.1
.704
-43.6
.077
-40.7
.616 -126.4
20000
.844
128.1
.680
-47.3
.077
-42.3
.623 -129.6
NOTE:* The data includes bonding wires.
n: number of wires
Gate
n=1 (0.2mm length, 25m Dia Au wire)
Drain
n=1 (0.2mm length, 25m Dia Au wire)
S-PARAMETERS
VDS = 10V, IDS = 60mA
FLK027XP
FLK027XV
Download S-Parameters, click here
Download S-Parameters, click here
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4
Source electrodes are electrically
insulated from the bottom of the
chip (PHS)
Die Thickness: 60
20
m
70
Drain
Source
Source
Gate
110
410
30
70
330
30
(Unit:
m)
CHIP OUTLINE
Source electrodes are
connected to the PHS
by Via-Hole
Die Thickness: 60
20
m
(Via-Hole)
70
Drain
Source
Source
Gate
410
30
70
330
30
(Unit:
m)
FLK027XP
FLK027XV
50
50
50
55
50
50
50
55
FLK027XP, FLK027XV
GaAs FET & HEMT Chips
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