FEATURES
High Voltage Operation : VDS=28V
High Power : P1dB=36dBm(typ.) at f=2.17GHz
High Gain: G1dB=14dB(typ.) at f=2.17GHz
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E004ME is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated amplification. This product is
ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers
while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol
Condition
Rating Unit
Drain-Source Voltage
V
DS
32 V
Gate-Source Voltage
V
GS
Tc=25
o
C -3 V
Total Power Dissipation
P
t
18.75 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
200
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
Limit
Unit
min. Typ. Max.
Pinch-Off Voltage
V
p
V
DS
=5V I
DS
=0.6mA -0.1 -0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-6uA
-5 -
-
V
Output Power at 1dB G.C.P.
P1dB V
DS
=28V f=2.17GHz 35.0 36.0 -
dBm
Power Gain at 1dB G.C.P. G
1dB
I
DS(DC)
=50mA
13.0 14.0 -
dB
Drain Efficiency
d
-
40 -
%
Thermal Resistance R
th
Channel to Case -
7.0 8.0
o
C
G.C.P.:Gain Compression Point
Edition 1.4
Mar. 2004
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item Symbol Condition
Limit
Unit
DC Input Voltage
V
DS
<28 V
Forward Gate Current I
GF
R
G
=100
<6.1 mA
Reverse Gate Current I
GR
R
G
=100
>-1.0 mA
Channel Temperature
T
ch
155
o
C
FLL21E004ME
High Voltage - High Power GaAs FET
FLL21E004ME
High Voltage - High Power GaAs FET
2
Output Power & Drain Efficiency vs. Input Power
@V
DS
=28V I
DS
=50mA f=2.17GHz
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=50mA fo=2.3125GHz f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR & Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=50mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
6
8
10 12 14 16 18 20 22 24 26
Input Pow er [dBm ]
O
u
tp
ut P
o
w
e
r
[dB
m
]
0
10
20
30
40
50
60
70
80
90
D
r
ain
E
f
f
i
ci
en
cy
[
%
]
Pout
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
16 18 20 22 24 26 28 30 32
Output Pow er [dBm]
IMD
[
d
B
c
]
0
5
10
15
20
25
30
35
D
r
ain
E
f
f
i
ci
en
cy
[
%
]
IM3
IM5
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
16 18 20 22 24 26 28 30 32
Output Pow er[dBm ]
ACL
R [
d
Bc
]
0
5
10
15
20
25
30
35
D
r
ai
n
E
f
f
i
cien
cy
[
%
]
+/-5MHz
+/-10MHz
Drain Efficiency
3
High Voltage - High Power GaAs FET
FLL21E004ME
S-Parameters @V
DS
=28V I
DS
=50mA f=0.5 to 5.0 GHz
S 11
S 22
25
50
0.5G H z
1.0
4.0
2.0
3.0
0.5G H z
5.0
1.0
2.0
3.0
4.0
5.0
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
100
10
S 12
S 21
0.5
10
0.5G H z
1.0
4
2.0
3
5
0.3
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
6
!freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang)
0.1
0.973
-67.8 24.531
139.8
0.007
45.3
0.630
-19.0
0.2
0.950
-107.7 17.618
114.5
0.009
30.2
0.580
-30.8
0.3
0.938
-128.8 13.004
98.7
0.010
19.1
0.566
-40.1
0.4
0.932
-141.4 10.107
87.6
0.010
13.3
0.571
-48.7
0.5
0.928
-149.7
8.139
78.6
0.009
10.0
0.584
-57.3
1
0.930
-167.2
3.734
47.9
0.005
14.2
0.686
-90.9
1.1
0.932
-168.9
3.329
43.1
0.005
21.6
0.705
-95.9
1.2
0.934
-170.3
2.981
38.9
0.004
37.1
0.722
-100.5
1.3
0.937
-172.4
2.675
34.5
0.005
43.2
0.741
-105.2
1.4
0.936
-173.4
2.432
30.3
0.006
56.3
0.754
-109.2
1.5
0.936
-174.5
2.200
26.6
0.006
71.9
0.772
-112.8
1.6
0.937
-175.4
2.010
23.4
0.006
83.7
0.782
-115.7
1.7
0.937
-176.5
1.867
19.4
0.008
81.8
0.796
-118.8
1.8
0.936
-177.2
1.713
16.5
0.009
89.3
0.813
-121.6
1.9
0.942
-178.0
1.598
13.4
0.009
93.0
0.819
-123.8
1.95
0.935
-178.4
1.545
11.9
0.011
90.1
0.826
-125.6
2
0.940
-178.9
1.496
10.3
0.011
90.8
0.829
-127.0
2.05
0.937
-179.2
1.436
8.5
0.013
91.6
0.834
-127.9
2.1
0.943
-179.9
1.388
7.5
0.012
89.9
0.838
-128.7
2.11
0.941
179.9
1.377
6.8
0.013
94.5
0.842
-129.0
2.12
0.943
179.7
1.371
7.0
0.012
93.4
0.845
-129.4
2.13
0.938
179.9
1.363
6.8
0.012
92.5
0.835
-129.4
2.14
0.940
179.9
1.356
6.2
0.014
97.1
0.838
-129.5
2.15
0.938
179.9
1.343
6.4
0.012
90.2
0.842
-129.9
2.16
0.945
179.9
1.336
6.1
0.013
92.3
0.844
-130.1
2.17
0.946
179.5
1.338
5.4
0.015
93.0
0.846
-130.1
2.18
0.937
179.4
1.320
5.1
0.014
98.4
0.847
-130.3
2.19
0.938
179.5
1.310
4.8
0.014
90.1
0.843
-130.8
2.2
0.937
179.3
1.303
4.9
0.014
95.6
0.849
-131.0
2.25
0.937
179.0
1.271
3.4
0.015
92.6
0.857
-131.9
2.3
0.942
178.5
1.232
1.7
0.015
95.0
0.857
-132.7
2.35
0.944
178.2
1.194
0.3
0.016
96.1
0.859
-133.6
2.4
0.942
177.6
1.164
-1.1
0.018
94.3
0.861
-134.4
2.5
0.942
177.2
1.103
-3.1
0.019
97.2
0.878
-136.3
2.6
0.941
176.5
1.054
-6.0
0.019
98.5
0.878
-138.1
2.7
0.943
175.6
1.005
-8.0
0.021
93.2
0.883
-139.4
2.8
0.943
174.7
0.963
-10.3
0.023
92.0
0.895
-140.6
2.9
0.944
174.0
0.923
-13.5
0.025
92.1
0.897
-142.4
3
0.945
173.1
0.892
-15.1
0.027
91.4
0.897
-143.1
5
ME Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
4 : SOURCE(Flange)
Unit : mm
FLL21E004ME
High Voltage - High Power GaAs FET
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