FEATURES
High Voltage Operation : VDS=28V
High Gain: 15dB(typ.) at Pout=40dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E040IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is target for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition
Rating Unit
Drain-Source Voltage V
DS
32
V
Gate-Source Voltage V
GS
Tc=25
o
C
-3 V
Total Power Dissipation P
t
83.3 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
200
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=5V I
DS
=150mA -0.1 -0.2 -0.5 V
Gate-Source Breakdown Voltage V
GSO
I
GS
=-1.5mA -5
-
-
V
3rd Order Intermodulation Distortion IM
3
V
DS
=28V -
-35 -31 dBc
Power Gain Gp
I
DS(DC)
=500mA 14.0 15.0 -
dB
Drain Efficiency
d
Pout=40dBm(Avg.)
-
26 -
%
Adjacent Channel Leakage Power Ratio ACLR note -
-36 -
dBc
Thermal Resistance R
th
Channel to Case -
1.6 1.8
o
C/W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item Symbol Condition
Limit Unit
DC Input Voltage V
DS
<28 V
Forward Gate Current I
GF
R
G
=2
<176 mA
Reverse Gate Current I
GR
R
G
=2
>-15.9 mA
Channel Temperature T
ch
155
o
C
FLL21E040IK
High Voltage - High Power GaAs FET
2
Output Power & Drain Efficiency vs. Input Power
@V
DS
=28V, I
DS
=500mA f=2.14GHz
Output Power vs. Frequency
@V
DS
=28V, I
DS
=500mA
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=500mA fo=2.1325, f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR & Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=500mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
FLL21E040IK
High Voltage - High Power GaAs FET
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
2
2.05
2.1
2.15
2.2
2.25
2.3
Frequency [GHz]
O
u
tpu
t
P
o
w
e
r
[d
B
m
]
Pin=20dBm
Pin=25dBm
Pin=30dBm
Pin=35dBm
P1dB
26
28
30
32
34
36
38
40
42
44
46
48
101214161820222426283032343638
Input Pow er[dBm ]
O
u
tpu
t
P
o
w
e
r
[d
B
m
]
0
10
20
30
40
50
60
70
80
90
100
110
D
r
ai
n
E
f
f
i
cien
cy
[
%
]
Pout
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
20 22 24 26 28 30 32 34 36 38 40 42
Output Pow er [dBm ]
I
M
D [
d
Bc
]
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
D
r
ai
n
E
f
f
i
cien
cy
[
%
]
IM3
IM5
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
20 22 24 26 28 30 32 34 36 38 40 42
Output Pow er [dBm]
AL
CR [
d
Bc
]
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
D
r
ai
n
E
f
f
i
cien
cy
[
%
]
+/-5MHz
+/-10MHz
Drain Efficiency
3
High Voltage - High Power GaAs FET
FLL21E040IK
S-Parameters @V
DS
=28V, I
DS
=500mA, f=1.7 to 3 GHz
S 11
S 22
2.0G H z
25
50
2.2
2.1
2.2
2.1
2.0G H z
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
100
10
S 12
S 21
0.6
0.4
12
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
2.0GHz
8
2.1
2.2
!freq(GHzS11(mag)S11(ang) S21(mag)S21(ang) S12(mag)S12(ang) S22(mag)S22(ang)
0.1
0.953
174.7
2.608
176.3
0.001
70.7
0.565
-153.1
0.2
0.889
171.9
4.640
130.1
0.002
65.7
0.851
-165.1
0.3
0.895
172.6
3.664
71.9
0.004
20.9
0.850
-178.9
0.4
0.931
169.8
2.268
39.5
0.002
22.6
0.838
177.2
0.5
0.938
166.2
1.511
20.1
0.002
10.9
0.855
173.8
1
0.948
149.4
0.614
-29.3
0.004
27.4
0.913
153.8
1.1
0.953
146.0
0.588
-37.3
0.005
32.1
0.906
149.7
1.2
0.952
142.3
0.597
-44.5
0.006
24.5
0.907
145.6
1.3
0.948
138.4
0.624
-52.9
0.006
31.8
0.907
141.3
1.4
0.944
133.8
0.689
-61.7
0.007
28.9
0.903
136.8
1.5
0.943
129.6
0.799
-72.1
0.009
13.0
0.889
131.4
1.6
0.920
124.8
0.964
-83.5
0.011
5.0
0.855
125.8
1.7
0.905
119.3
1.243
-97.0
0.014
-4.4
0.828
119.6
1.8
0.858
112.8
1.718
-114.1
0.018
-21.8
0.794
112.9
1.9
0.807
105.3
2.575
-136.9
0.026
-41.4
0.743
104.5
1.95
0.768
101.1
3.263
-151.0
0.030
-57.4
0.727
98.8
2
0.714
94.9
4.253
-168.2
0.038
-74.7
0.721
90.1
2.05
0.625
83.9
5.890
169.2
0.050
-97.1
0.722
73.3
2.1
0.388
59.6
8.431
135.3
0.066
-132.4
0.706
33.0
2.11
0.304
50.9
9.088
125.7
0.069
-141.9
0.698
19.4
2.12
0.199
38.9
9.530
115.7
0.072
-152.1
0.684
3.3
2.13
0.082
11.6
9.900
104.5
0.071
-163.8
0.665
-14.6
2.14
0.076
-116.4
9.952
92.4
0.073
-174.9
0.652
-35.0
2.15
0.204
-147.0
9.710
80.5
0.068
172.1
0.641
-55.9
2.16
0.328
-161.3
9.243
68.8
0.064
160.5
0.640
-76.1
2.17
0.438
-172.0
8.617
58.1
0.059
151.0
0.647
-94.5
2.18
0.523
179.6
7.824
48.7
0.051
140.7
0.662
-111.0
2.19
0.598
172.6
7.157
40.2
0.047
132.6
0.673
-124.3
2.2
0.648
166.5
6.453
32.8
0.040
124.9
0.691
-135.8
2.25
0.788
147.2
3.966
5.9
0.023
96.9
0.753
-171.7
2.3
0.836
137.6
2.609
-10.9
0.014
75.7
0.796
170.6
2.35
0.862
130.9
1.839
-24.0
0.010
64.0
0.828
159.6
2.4
0.877
126.5
1.364
-34.2
0.006
43.1
0.853
151.9
2.5
0.901
119.0
0.826
-49.5
0.003
10.9
0.883
141.3
2.6
0.910
112.6
0.558
-62.6
0.004
17.9
0.899
133.6
2.7
0.913
107.8
0.401
-73.0
0.002
-3.1
0.909
127.7
2.8
0.917
103.2
0.305
-81.7
0.001
-5.4
0.925
122.5
2.9
0.918
99.0
0.243
-90.1
0.002
-12.9
0.934
117.9
3
0.920
94.8
0.206
-96.9
0.002
-25.9
0.937
114.2
5
IK Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit:mm
FLL21E040IK
High Voltage - High Power GaAs FET
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